HIT 2SA1191, 2SA1190 Datasheet

2SA1190, 2SA1191

Silicon PNP Epitaxial

Application

• Low frequency low noise amplifier

• Complementary pair with 2SC2855 and 2SC2856

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1190, 2SA1191

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SA1190 2SA1191 Unit

Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current I
Emitter current I
Collector power dissipation P

CBO

CEO

EBO

C

E

C

Junction temperature Tj 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 °C

–90 –120 V
–90 –120 V
–5 –5 V
–100 –100 mA
100 100 mA
400 400 mW

2

2SA1190, 2SA1191

Electrical Characteristics (Ta = 25°C)

2SA1190 2SA1191

Item Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base
breakdown voltage

Collector to emitter
breakdown voltage

Emitter to base
breakdown voltage

Collector cutoff current I
Emitter cutoff current I
DC current trnsfer ratio hFE*

Collector to emitter
saturation voltage

Base to emitter
saturation voltage

Gain bandwidth product f

Collector output
capacitance

Noise figure NF — 0.15 1.5 — 0.15 1.5 dB VCE = –6 V,

Noise voltage reffered
to input

Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.

2. Pulse test

DE

250 to 500 400 to 800

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

CBO

EBO

V

CE(sat)

V

BE(sat)

T

–90 — — –120 — — V IC = –10 µA, IE = 0

–90 — — –120 — — V IC = –1 mA, RBE = ∞

–5 — — –5 — — V IE = –10 µA, IC = 0

— — –0.1 — — –0.1 µAVCB = –70 V, IE = 0
— — –0.1 — — –0.1 µAVEB = –2 V, IC = 0

1

250 — 800 250 — 800 VCE = –12 V,

I

= –2 mA*

C

— –0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,

I

= –1 mA*

B

— –0.7 –1.0 — –0.7 –1.0 V

— 130 — — 130 — MHz VCE = –6 V,

I

= –10 mA

C

2

2

Cob — 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,

f = 1 MHz

I

= –0.1 mA,

C

R

= 10 kΩ

g

f = 1 kHz

— 0.2 2.0 — 0.2 2.0 dB VCE = –6 V,

I

= –0.1 mA,

C

R

= 10 kΩ

g

f = 10 Hz

e

n

— 0.7 — — 0.7 — nV/

√Hz

VCB = –6 V,
I

= –10 mA,

C

Rg = 0, f = 1 kHz

3