HIT 2SA1191, 2SA1190 Datasheet

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2SA1190, 2SA1191
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC2855 and 2SC2856
Outline
TO-92 (1)
1. Emitter
2. Collector
3
2
1
2SA1190, 2SA1191
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1190 2SA1191 Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V Collector current I Emitter current I Collector power dissipation P
CBO
CEO
EBO
C
E
C
Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C
–90 –120 V –90 –120 V –5 –5 V –100 –100 mA 100 100 mA 400 400 mW
2
2SA1190, 2SA1191
Electrical Characteristics (Ta = 25°C)
2SA1190 2SA1191
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current I Emitter cutoff current I DC current trnsfer ratio hFE*
Collector to emitter saturation voltage
Base to emitter saturation voltage
Gain bandwidth product f
Collector output capacitance
Noise figure NF 0.15 1.5 0.15 1.5 dB VCE = –6 V,
Noise voltage reffered to input
Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows.
2. Pulse test
DE
250 to 500 400 to 800
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
EBO
V
CE(sat)
V
BE(sat)
T
–90 –120 — V IC = –10 µA, IE = 0
–90 –120 — V IC = –1 mA, RBE =
–5 –5 V IE = –10 µA, IC = 0
–0.1 –0.1 µAVCB = –70 V, IE = 0 — –0.1 –0.1 µAVEB = –2 V, IC = 0
1
250 800 250 800 VCE = –12 V,
I
= –2 mA*
C
–0.05 –0.15 — –0.05 –0.15 V IC = –10 mA,
I
= –1 mA*
B
–0.7 –1.0 –0.7 –1.0 V
130 130 MHz VCE = –6 V,
I
= –10 mA
C
2
2
Cob 3.2 3.2 pF VCB = –10 V, IE = 0,
f = 1 MHz
I
= –0.1 mA,
C
R
= 10 k
g
f = 1 kHz
0.2 2.0 0.2 2.0 dB VCE = –6 V,
I
= –0.1 mA,
C
R
= 10 k
g
f = 10 Hz
e
n
0.7 0.7 nV/
Hz
VCB = –6 V, I
= –10 mA,
C
Rg = 0, f = 1 kHz
3
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