HIT 2SA1191, 2SA1190 Datasheet

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HIT 2SA1191, 2SA1190 Datasheet

2SA1190, 2SA1191

Silicon PNP Epitaxial

Application

Low frequency low noise amplifier

Complementary pair with 2SC2855 and 2SC2856

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1190, 2SA1191

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

2SA1190

2SA1191

Unit

Collector to base voltage

VCBO

 

–90

–120

V

Collector to emitter voltage

VCEO

 

–90

–120

V

Emitter to base voltage

VEBO

 

–5

–5

V

Collector current

IC

 

–100

–100

mA

 

 

 

 

 

Emitter current

IE

100

100

mA

 

 

 

 

 

Collector power dissipation

PC

400

400

mW

 

 

 

 

 

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

 

–55 to +150

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SA1190, 2SA1191

Electrical Characteristics (Ta = 25°C)

 

 

2SA1190

 

2SA1191

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min

Typ

Max Unit

 

 

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–90

–120

 

V

I

 

 

C = –10 µA, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–90

–120

 

V

I

 

 

C = –1 mA, RBE = ∞

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

–5

–5

 

V

I

 

 

E = –10 µA, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.1

–0.1

µA

 

 

 

VCB = –70 V, IE = 0

Emitter cutoff current

IEBO

–0.1

–0.1

µA

 

 

 

VEB = –2 V, IC = 0

DC current trnsfer ratio

h *1

250

800

250

 

800

 

 

V

CE

= –12 V,

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA*2

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.05

–0.15

–0.05

–0.15 V

 

I

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA*2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter

VBE(sat)

–0.7

–1.0

–0.7

 

–1.0

V

 

 

 

 

 

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

130

130

 

MHz

V

 

 

CE = –6 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –10 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.2

3.2

 

pF

V

 

 

CB = –10 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise figure

NF

0.15

1.5

0.15

 

1.5

dB

 

V

CE = –6 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –0.1 mA,

 

 

 

 

 

 

 

 

 

 

 

 

 

Rg = 10 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

2.0

0.2

 

2.0

dB

 

V

CE = –6 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –0.1 mA,

 

 

 

 

 

 

 

 

 

 

 

 

 

Rg = 10 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 10 Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise voltage reffered

en

0.7

0.7

 

nV/

 

 

 

VCB = –6 V,

to input

 

 

 

 

 

 

 

 

√Hz

 

 

IC = –10 mA,

Rg = 0, f = 1 kHz

Notes: 1. The 2SA1190 and 2SA1191 are grouped by hFE as follows. 2. Pulse test

D

E

 

 

 

 

 

 

 

 

 

 

 

 

 

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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