HIT 2SA1171 Datasheet

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HIT 2SA1171 Datasheet

2SA1171

Silicon PNP Epitaxial

Application

Low frequency small signal amplifier

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SA1171

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–90

V

Collector to emitter voltage

VCEO

–90

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–50

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to emitter breakdown

V(BR)CEO

–90

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–0.5

A

VCB = –75 V, IE = 0

DC current transfer ratio

 

h *1

250

800

 

V

CE

= –12 V, I = –2 mA

 

 

 

FE

 

 

 

 

 

C

Base to emitter voltage

 

VBE

–0.75

V

V

CE = –12 V, IC = –2 mA

Collector to emitter saturation

VCE(sat)

–0.5

V

I

C = –10 mA, IB = –1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

 

fT

200

MHz

V

CE = –12 V, IC = –2 mA

 

 

 

 

 

 

 

 

 

Collector output capacitance

 

Cob

1.6

pF

V

CB = –25 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

Note: 1. The 2SA1171 is grouped by hFE as follows.

 

 

 

 

 

Grade

D

E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

PD

PE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE

250 to 500

400 to 800

 

 

 

 

 

 

 

See characteristic curves of 2SA872.

2

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