2SA1121
Silicon PNP Epitaxial
Application
•Low frequency amplifier
•Complementary pair with 2SC2618
Outline
MPAK
3
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1 |
Emitter |
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1. |
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2 |
2. |
Base |
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3. |
Collector |
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2SA1121
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
–35 |
V |
Collector to emitter voltage |
VCEO |
–35 |
V |
Emitter to base voltage |
VEBO |
–4 |
V |
Collector current |
IC |
–500 |
mA |
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Collector power dissipation |
PC |
150 |
mW |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
Typ |
Max |
Unit |
Test conditions |
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Collector to base breakdown |
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V(BR)CBO |
–35 |
— |
— |
V |
I |
C = –10 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
–35 |
— |
— |
V |
I |
C = –1 mA, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
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V(BR)EBO |
–4 |
— |
— |
V |
I |
E = –10 A, IC = 0 |
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voltage |
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Collector cutoff current |
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ICBO |
— |
— |
–0.5 |
A |
VCB = –20 V, IE = 0 |
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Collector to emitter saturation |
VCE(sat) |
— |
–0.2 |
–0.6 |
V |
I C = –150 mA, IB = –15 mA |
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voltage |
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DC current transfer ratio |
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h *1 |
60 |
— |
320 |
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V |
CE |
= –3 V, I = –10 mA |
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FE |
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C |
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hFE |
10 |
— |
— |
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V |
CE = –3 V, IC = –500 mA |
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(Pulse test) |
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Base to emitter voltage |
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VBE |
— |
–0.64 |
— |
V |
V |
CE = –3 V, IC = –10 mA |
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Note: 1. The 2SA1121 is grouped by hFE as follows. |
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Grade |
B |
C |
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D |
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Mark |
SB |
SC |
SD |
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hFE |
60 to 120 |
100 to 200 |
160 to 320 |
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See characteristic curves of 2SA673.
2