HIT 2SA1085, 2SA1084, 2SA1083 Datasheet

HIT 2SA1085, 2SA1084, 2SA1083 Datasheet

2SA1083, 2SA1084, 2SA1085

Silicon PNP Epitaxial

Application

Low frequency low noise amplifier

Complementary pair with 2SC2545, 2SC2546 and 2SC2547

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1083, 2SA1084, 2SA1085

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

2SA1083

2SA1084

2SA1085

Unit

Collector to base voltage

VCBO

 

–60

–90

–120

V

Collector to emitter voltage

VCEO

 

–60

–90

–120

V

Emitter to base voltage

VEBO

 

–5

–5

–5

V

Collector current

IC

 

–100

–100

–100

mA

 

 

 

 

 

 

 

 

 

 

 

 

Emitter current

IE

100

 

 

 

 

 

 

100

100

mA

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation

PC

400

 

 

 

 

 

 

400

400

mW

 

 

 

 

 

 

 

 

 

 

 

 

Junction temperature

Tj

150

 

 

 

 

 

 

150

150

°C

Storage temperature

Tstg

 

–55 to +150

–55 to +150

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SA1083, 2SA1084, 2SA1085

Electrical Characteristics (Ta = 25°C)

 

 

2SA1083

 

2SA1084

2SA1085

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ Max Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–60

–90

–120

V

I

C = –10 µA, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–60

–90

–120

V

I

C = –1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

RBE = ∞

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

–5

–5

–5

V

I

E = –10 µA, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.1

–0.1

–0.1

 

µA

VCB = –50 V, IE = 0

Emitter cutoff current

IEBO

–0.1

–0.1

–0.1

 

µA

VEB = –2 V, IC = 0

DC current transfer ratio

hFE*1

250

800

250

800

250 —

800

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.2

–0.2

–0.2

V

I

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.6

–0.6

–0.6

V

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

90

90

90

MHz

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.5

3.5

3.5

pF

V

CB = –10 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise voltage reffered

en

0.5

0.5

0.5

nV/

√Hz

VCE = –6V,

to input

 

 

 

 

 

 

 

 

 

 

 

IC = –10 mA,

f = 1 kHz,

Rg = 0, f = 1Hz

Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.

D

E

 

 

 

 

 

 

 

 

 

 

 

 

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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