HIT 2SA1085, 2SA1084, 2SA1083 Datasheet

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HIT 2SA1085, 2SA1084, 2SA1083 Datasheet

2SA1083, 2SA1084, 2SA1085

Silicon PNP Epitaxial

Application

Low frequency low noise amplifier

Complementary pair with 2SC2545, 2SC2546 and 2SC2547

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1083, 2SA1084, 2SA1085

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

2SA1083

2SA1084

2SA1085

Unit

Collector to base voltage

VCBO

 

–60

–90

–120

V

Collector to emitter voltage

VCEO

 

–60

–90

–120

V

Emitter to base voltage

VEBO

 

–5

–5

–5

V

Collector current

IC

 

–100

–100

–100

mA

 

 

 

 

 

 

 

 

 

 

 

 

Emitter current

IE

100

 

 

 

 

 

 

100

100

mA

 

 

 

 

 

 

 

 

 

 

 

 

Collector power dissipation

PC

400

 

 

 

 

 

 

400

400

mW

 

 

 

 

 

 

 

 

 

 

 

 

Junction temperature

Tj

150

 

 

 

 

 

 

150

150

°C

Storage temperature

Tstg

 

–55 to +150

–55 to +150

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SA1083, 2SA1084, 2SA1085

Electrical Characteristics (Ta = 25°C)

 

 

2SA1083

 

2SA1084

2SA1085

 

 

 

 

 

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min Typ Max Min

Typ

Max

Unit

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–60

–90

–120

V

I

C = –10 µA, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–60

–90

–120

V

I

C = –1 mA,

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

RBE = ∞

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

–5

–5

–5

V

I

E = –10 µA, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.1

–0.1

–0.1

 

µA

VCB = –50 V, IE = 0

Emitter cutoff current

IEBO

–0.1

–0.1

–0.1

 

µA

VEB = –2 V, IC = 0

DC current transfer ratio

hFE*1

250

800

250

800

250 —

800

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.2

–0.2

–0.2

V

I

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.6

–0.6

–0.6

V

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

90

90

90

MHz

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.5

3.5

3.5

pF

V

CB = –10 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise voltage reffered

en

0.5

0.5

0.5

nV/

√Hz

VCE = –6V,

to input

 

 

 

 

 

 

 

 

 

 

 

IC = –10 mA,

f = 1 kHz,

Rg = 0, f = 1Hz

Note: 1. The 2SA1083, 2SA1084 and 2SA1085 are grouped by hFE as follows.

D

E

 

 

 

 

 

 

 

 

 

 

 

 

250 to 500

400 to 800

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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