HIT 2SA1025, 2SA1082, 2SA1081 Datasheet

2SA1025, 2SA1081, 2SA1082

Silicon PNP Epitaxial

Application

• Low frequency amplifier

• Complementary pair with 2SC2396, 2SC2543 and 2SC2544

Outline

1. Emitter

2. Collector

3. Base

TO-92 (1)

3

2

1

2SA1025, 2SA1081, 2SA1082

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SA1025 2SA1081 2SA1082 Unit

Collector to base voltage V

CBO

–60 –90 –120 V

Collector to emitter voltage V

CEO

–60 –90 –120 V

Emitter to base voltage V

EBO

–5 –5 –5 V

Collector current I

C

–100 –100 –100 mA

Emitter current I

E

100 100 100 mA

Collector power dissipation P

C

400 400 400 mW

Junction temperature Tj 150 150 150 °C

Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

2SA1025 2SA1081 2SA1082

Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V

(BR)CBO

–60 — — –90 — — –120 — — V I

C

= –10 µA, I

E

= 0

Collector to emitter

breakdown voltage

V

(BR)CEO

–60 — — –90 — — –120 — — V I

C

= –1 mA,

R

BE

= ∞

Emitter to base

breakdown voltage

V

(BR)EBO

–5 — — –5 — — –5 — — µAI

E

= –10 µA, I

C

= 0

Collector cutoff current I

CBO

— — –0.1 — — –0.1 — — –0.1 µAV

CB

= –50 V, I

E

= 0

Emitter cutoff current I

EBO

— — –0.1 — — –0.1 — — –0.1 V

EB

= –2 V, I

C

= 0

DC current transfer ratio h

FE

*

1

250 — 800 250 — 800 250 — 800 V

CE

= –12 V,

I

C

= –2 mA

Collector to emitter

saturation voltage

V

CE(sat)

— — –0.2 — — –0.2 — — –0.2 V I

C

= –10 mA,

I

B

= –1 mA

Base to emitter voltage V

BE

— –0.6 — — –0.6 — — –0.6 — V V

CE

= –12 V,

I

C

= –2 mA

Gain bandwidth product f

T

—90— —90— —90— MHzV

CE

= –12 V,

I

C

= –2 mA

Collector output

capacitance

Cob — 3.5 — — 3.5 — — 3.5 — pF V

CB

= –10 V, I

E

= 0,

f = 1 MHz

Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h

FE

as follows.

DE

250 to 500 400 to 800

See characteristic curves of 2SA1083.