HIT 2SA1025, 2SA1082, 2SA1081 Datasheet

0 (0)
2SA1025, 2SA1081, 2SA1082
Silicon PNP Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SC2396, 2SC2543 and 2SC2544
Outline
1. Emitter
2. Collector
TO-92 (1)
3
2
1
2SA1025, 2SA1081, 2SA1082
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1025 2SA1081 2SA1082 Unit
Collector to base voltage V
CBO
–60 –90 –120 V
Collector to emitter voltage V
CEO
–60 –90 –120 V
Emitter to base voltage V
EBO
–5 –5 –5 V
Collector current I
C
–100 –100 –100 mA
Emitter current I
E
100 100 100 mA
Collector power dissipation P
C
400 400 400 mW
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SA1025 2SA1081 2SA1082
Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V
(BR)CBO
–60 –90 –120 V I
C
= –10 µA, I
E
= 0
Collector to emitter
breakdown voltage
V
(BR)CEO
–60 –90 –120 V I
C
= –1 mA,
R
BE
=
Emitter to base
breakdown voltage
V
(BR)EBO
–5 –5 –5 µAI
E
= –10 µA, I
C
= 0
Collector cutoff current I
CBO
–0.1 –0.1 –0.1 µAV
CB
= –50 V, I
E
= 0
Emitter cutoff current I
EBO
–0.1 –0.1 –0.1 V
EB
= –2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250 800 250 800 250 800 V
CE
= –12 V,
I
C
= –2 mA
Collector to emitter
saturation voltage
V
CE(sat)
–0.2 –0.2 –0.2 V I
C
= –10 mA,
I
B
= –1 mA
Base to emitter voltage V
BE
–0.6 –0.6 –0.6 V V
CE
= –12 V,
I
C
= –2 mA
Gain bandwidth product f
T
—90 —90 —90 MHzV
CE
= –12 V,
I
C
= –2 mA
Collector output
capacitance
Cob 3.5 3.5 3.5 pF V
CB
= –10 V, I
E
= 0,
f = 1 MHz
Note: 1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h
FE
as follows.
DE
250 to 500 400 to 800
See characteristic curves of 2SA1083.
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