HIT 2SA1052 Datasheet

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2SA1052
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
1
2
3
1. Emitter
2. Base
MPAK
2SA1052
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
–30 V
Collector to emitter voltage V
CEO
–30 V
Emitter to base voltage V
EBO
–5 V
Collector current I
C
–100 mA
Emitter current I
E
100 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
–30 V I
C
= –10 µA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
–30 V I
C
= –1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
–5 V I
E
= –10 µA, I
C
= 0
Collector cutoff current I
CBO
–0.5 µAV
CB
= –20 V, I
E
= 0
Emitter cutoff current I
EBO
–0.5 µAV
EB
= –2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
100 500 V
CE
= –12 V, I
C
= –2 mA
Collector to emitter saturation
voltage
V
CE(sat)
–0.2 V I
C
= –10 mA, I
B
= –1 mA
Base to emitter voltage V
BE
–0.75 V V
CE
= –12 V, I
C
= –2 mA
Note: 1. The 2SA1052 is grouped by h
FE
as follows.
Grade B C D
Mark MB MC MD
h
FE
100 to 200 160 to 320 250 to 500
See characteristic curves of 2SA1031.
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