HIT 2SA1052 Datasheet

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HIT 2SA1052 Datasheet

2SA1052

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SA1052

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

–30

V

Collector to emitter voltage

VCEO

–30

V

Emitter to base voltage

VEBO

–5

V

Collector current

IC

–100

mA

 

 

 

 

Emitter current

IE

100

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

 

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

 

V(BR)CBO

–30

V

I

C = –10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

–30

V

I

C = –1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base breakdown

 

V(BR)EBO

–5

V

I

E = –10 A, IC = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

 

ICBO

–0.5

A

VCB = –20 V, IE = 0

Emitter cutoff current

 

IEBO

–0.5

A

VEB = –2 V, IC = 0

DC current transfer ratio

 

h *1

100

500

 

V

CE

= –12 V, I = –2 mA

 

 

 

FE

 

 

 

 

 

C

Collector to emitter saturation

VCE(sat)

–0.2

V

I

C = –10 mA, IB = –1 mA

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

 

VBE

–0.75

V

V

CE = –12 V, IC = –2 mA

Note: 1. The 2SA1052 is grouped by hFE as follows.

 

 

 

 

 

Grade

B

C

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

MB

MC

MD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

hFE

100 to 200

160 to 320

250 to 500

 

 

 

 

 

See characteristic curves of 2SA1031.

2

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