HIT 2SA1052 Datasheet

2SA1052

Silicon PNP Epitaxial

Application

Low frequency amplifier

Outline

1

2

3

1. Emitter

2. Base

3. Collector

MPAK

2SA1052

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

–30 V

Collector to emitter voltage V

CEO

–30 V

Emitter to base voltage V

EBO

–5 V

Collector current I

C

–100 mA

Emitter current I

E

100 mA

Collector power dissipation P

C

150 mW

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

–30 — — V I

C

= –10 µA, I

E

= 0

Collector to emitter breakdown

voltage

V

(BR)CEO

–30 — — V I

C

= –1 mA, R

BE

= ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–5 — — V I

E

= –10 µA, I

C

= 0

Collector cutoff current I

CBO

— — –0.5 µAV

CB

= –20 V, I

E

= 0

Emitter cutoff current I

EBO

— — –0.5 µAV

EB

= –2 V, I

C

= 0

DC current transfer ratio h

FE

*

1

100 — 500 V

CE

= –12 V, I

C

= –2 mA

Collector to emitter saturation

voltage

V

CE(sat)

— — –0.2 V I

C

= –10 mA, I

B

= –1 mA

Base to emitter voltage V

BE

— — –0.75 V V

CE

= –12 V, I

C

= –2 mA

Note: 1. The 2SA1052 is grouped by h

FE

as follows.

Grade B C D

Mark MB MC MD

h

FE

100 to 200 160 to 320 250 to 500

See characteristic curves of 2SA1031.