HIT 2SA1032 Datasheet

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HIT 2SA1032 Datasheet

2SA1031, 2SA1032

Silicon PNP Epitaxial

Application

Low frequency low noise amplifier

Complementary pair with 2SC458 (LG) and 2SC2310

Outline

TO-92 (1)

1. Emitter

2. Collector

3. Base

3

2

1

2SA1031, 2SA1032

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

2SA1031

2SA1032

Unit

Collector to base voltage

VCBO

 

–30

–55

V

Collector to emitter voltage

VCEO

 

–30

–50

V

Emitter to base voltage

VEBO

 

–5

–5

V

Collector current

IC

 

–100

–100

mA

 

 

 

 

 

Emitter current

IE

100

100

mA

 

 

 

 

 

Collector power dissipation

PC

300

300

mW

 

 

 

 

 

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

 

–55 to +150

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

2SA1031, 2SA1032

Electrical Characteristics (Ta = 25°C)

 

 

2SA1031

 

2SA1032

 

 

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Min

Typ Max

 

Unit

 

Test conditions

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to base

V(BR)CBO

–30

–55

V

 

 

I

 

C = –10 µA, IE = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

V(BR)CEO

–30

–50

V

 

 

I

 

C = –1 mA, RBE = ∞

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Emitter to base

V(BR)EBO

–5

–5

V

 

 

I

 

E = –10 µA, IC = 0

breakdown voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

–0.5

–0.5

 

 

µA

 

 

VCB = –18 V, IE = 0

Emitter cutoff current

IEBO

–0.5

–0.5

 

 

µA

 

 

VEB = –2 V, IC = 0

DC current trnsfer ratio

h *1

100

500

100

320

 

 

 

 

V

CE

= –12 V,

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Base to emitter voltage

VBE

–0.8

–0.8

V

 

 

V

 

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter

VCE(sat)

–0.2

–0.2

V

 

 

I

 

C = –10 mA,

saturation voltage

 

 

 

 

 

 

 

 

 

 

 

 

IB = –1 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

200

280

200

280

 

MHz

 

V

CE = –12 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –2 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output

Cob

3.3

4.0

3.3

4.0

 

pF

 

V

CB = –10 V, IE = 0,

capacitance

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

Noise figure

NF

5

5

dB

V

 

CE = –6 V,

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = –0.1 mA,

 

 

 

 

 

 

 

 

 

 

 

 

 

Rg = 500 Ω,

f = 120 Hz

Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.

 

B

C

D

 

 

2SA1031

100 to 200

160 to 320

250 to 500

 

 

 

 

 

 

 

2SA1032

100 to 200

160 to 320

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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