2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
•Low frequency low noise amplifier
•Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1031, 2SA1032
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
|
2SA1031 |
2SA1032 |
Unit |
|||||||||||||||
Collector to base voltage |
VCBO |
|
–30 |
–55 |
V |
|||||||||||||||
Collector to emitter voltage |
VCEO |
|
–30 |
–50 |
V |
|||||||||||||||
Emitter to base voltage |
VEBO |
|
–5 |
–5 |
V |
|||||||||||||||
Collector current |
IC |
|
–100 |
–100 |
mA |
|||||||||||||||
|
|
|
|
|
||||||||||||||||
Emitter current |
IE |
100 |
100 |
mA |
||||||||||||||||
|
|
|
|
|
||||||||||||||||
Collector power dissipation |
PC |
300 |
300 |
mW |
||||||||||||||||
|
|
|
|
|
||||||||||||||||
Junction temperature |
Tj |
150 |
150 |
°C |
||||||||||||||||
Storage temperature |
Tstg |
|
–55 to +150 |
–55 to +150 |
°C |
|||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2
2SA1031, 2SA1032
Electrical Characteristics (Ta = 25°C)
|
|
2SA1031 |
|
2SA1032 |
|
|
|
|
|
|
|
|
||
Item |
Symbol |
Min |
Typ |
Max |
Min |
Typ Max |
|
Unit |
|
Test conditions |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector to base |
V(BR)CBO |
–30 |
— |
— |
–55 |
— |
— |
V |
|
|
I |
|
C = –10 µA, IE = 0 |
|
breakdown voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector to emitter |
V(BR)CEO |
–30 |
— |
— |
–50 |
— |
— |
V |
|
|
I |
|
C = –1 mA, RBE = ∞ |
|
breakdown voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Emitter to base |
V(BR)EBO |
–5 |
— |
— |
–5 |
— |
— |
V |
|
|
I |
|
E = –10 µA, IC = 0 |
|
breakdown voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector cutoff current |
ICBO |
— |
— |
–0.5 |
— |
— |
–0.5 |
|
|
µA |
|
|
VCB = –18 V, IE = 0 |
|
Emitter cutoff current |
IEBO |
— |
— |
–0.5 |
— |
— |
–0.5 |
|
|
µA |
|
|
VEB = –2 V, IC = 0 |
|
DC current trnsfer ratio |
h *1 |
100 |
— |
500 |
100 |
— |
320 |
|
|
|
|
V |
CE |
= –12 V, |
|
FE |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IC = –2 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Base to emitter voltage |
VBE |
— |
— |
–0.8 |
— |
— |
–0.8 |
V |
|
|
V |
|
CE = –12 V, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IC = –2 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector to emitter |
VCE(sat) |
— |
— |
–0.2 |
— |
— |
–0.2 |
V |
|
|
I |
|
C = –10 mA, |
|
saturation voltage |
|
|
|
|
|
|
|
|
|
|
|
|
IB = –1 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Gain bandwidth product |
fT |
200 |
280 |
— |
200 |
280 |
— |
|
MHz |
|
V |
CE = –12 V, |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
IC = –2 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Collector output |
Cob |
— |
3.3 |
4.0 |
— |
3.3 |
4.0 |
|
pF |
|
V |
CB = –10 V, IE = 0, |
||
capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
f = 1 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Noise figure |
NF |
— |
— |
5 |
— |
— |
5 |
dB |
V |
|
CE = –6 V, |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
IC = –0.1 mA, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rg = 500 Ω, |
f = 120 Hz
Note: 1. The 2SA1031 and 2SA1032 are grouped by hFE as follows.
|
B |
C |
D |
|
|
|||||||||||||||
2SA1031 |
100 to 200 |
160 to 320 |
250 to 500 |
|
||||||||||||||||
|
|
|
|
|
|
|||||||||||||||
2SA1032 |
100 to 200 |
160 to 320 |
— |
|
||||||||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3