2SA1029, 2SA1030
Silicon PNP Epitaxial
Application
•Low frequency amplifier
•Complementary pair with 2SC458 and 2SC2308
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
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2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
2SA1029 |
2SA1030 |
Unit |
Collector to base voltage |
VCBO |
–30 |
–55 |
V |
Collector to emitter voltage |
VCEO |
–30 |
–50 |
V |
Emitter to base voltage |
VEBO |
–5 |
–5 |
V |
Collector current |
IC |
–100 |
–100 |
mA |
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Emitter current |
IE |
100 |
100 |
mA |
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Collector power dissipation |
PC |
300 |
300 |
mW |
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Junction temperature |
Tj |
150 |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
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2SA1029 |
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2SA1030 |
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Symbol |
Min |
Typ |
Max |
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Min |
Typ Max |
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Unit |
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Test conditions |
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Collector to base |
V(BR)CBO |
–30 |
— |
— |
–55 |
— |
— |
V |
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I |
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C = –10 A, IE = 0 |
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breakdown voltage |
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Collector to emitter |
V(BR)CEO |
–30 |
— |
— |
–50 |
— |
— |
V |
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I |
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C = –1 mA, RBE = ∞ |
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breakdown voltage |
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Emitter to base |
V(BR)EBO |
–5 |
— |
— |
–5 |
— |
— |
V |
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I |
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E = –10 A, IC = 0 |
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breakdown voltage |
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Collector cutoff current |
ICBO |
— |
— |
–0.5 |
— |
— |
–0.5 |
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A |
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VCB = –18 V, IE = 0 |
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Emitter cutoff current |
IEBO |
— |
— |
–0.5 |
— |
— |
–0.5 |
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A |
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VEB = –2 V, IC = 0 |
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DC current trnsfer ratio |
h |
*1 |
100 |
— |
500 |
100 |
— |
320 |
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V |
CE |
= –12 V, |
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FE |
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IC = –2 mA |
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Base to emitter voltage |
VBE |
— |
— |
–0.8 |
— |
— |
–0.8 |
V |
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V |
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CE = –12 V, |
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IC = –2 mA |
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Collector to emitter |
VCE(sat) |
— |
— |
–0.2 |
— |
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–0.2 |
V |
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I |
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C = –10 mA, |
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saturation voltage |
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IB = –1 mA |
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Gain bandwidth product |
fT |
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200 |
280 |
— |
200 |
280 |
— |
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MHz |
V |
CB = –12 V, |
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IC = –2 mA |
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Collector output |
Cob |
— |
3.3 |
4.0 |
— |
3.3 |
4.0 |
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pF |
V |
CB = –10 V, IE = 0, |
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capacitance |
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f = 1 MHz |
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Note: 1. The 2SA1029 and 2SA1030 are grouped by hFE as follows. |
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B |
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C |
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D |
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2SA1029 |
100 to 200 |
160 to 320 |
250 to 500 |
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2SA1030 |
100 to 200 |
160 to 320 |
— |
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See characteristic curves of 2SA1031 and 2SA1032.
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