1SS82
Silicon Epitaxial Planar Diode for High Voltage Switching
ADE-208-149A (Z)
Rev. 1
Jul. 1995
Features
•High reverse voltage. (VR = 200V)
•High reliability with glass seal.
Ordering Information
Type No. |
Cathode band |
2nd band |
Package Code |
1SS82 |
Verdure |
Light Blue |
DO-35 |
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Outline
1 |
2 |
2nd band
Cathode band
1. Cathode
2. Anode
1SS82
Absolute Maximum Ratings*2 (Ta = 25°C)
Item |
Symbol |
Value |
Unit |
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Peak reverse voltage |
V |
*1 |
250 |
V |
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RM |
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Reverse voltage |
VR |
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200 |
V |
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Peak forward current |
IFM |
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625 |
mA |
Non-Repetitive peak forward surge current |
IFSM*2 |
1 |
A |
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Average forward current |
IO |
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200 |
mA |
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Power dissipation |
Pd |
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400 |
mW |
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Junction temperature |
Tj |
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175 |
°C |
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Storage temperature |
Tstg |
–65 to +175 |
°C |
Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current.
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
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Max |
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Unit |
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Test Condition |
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Forward voltage |
VF |
— |
— |
1.0 |
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V |
I |
F = 100mA |
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Reverse current |
IR1 |
— |
— |
0.2 |
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µA |
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VR = 200V |
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IR2 |
— |
— |
100 |
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V |
R = 250V |
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Capacitance |
C |
— |
1.5 |
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— |
pF |
V |
R = 0V, f = 1MHz |
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Reverse recovery time |
trr |
— |
— |
100 |
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ns |
I |
F = IR = 30mA, Irr = 3mA, RL = 100Ω |
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