HIT 1SS81 Datasheet

0 (0)
HIT 1SS81 Datasheet

1SS81

Silicon Epitaxial Planar Diode for High Voltage Switching

ADE-208-148A (Z)

Rev. 1

Jul. 1995

Features

High reverse voltage. (VR = 150V)

High reliability with glass seal.

Ordering Information

Type No.

Cathode band

Package Code

1SS81

Verdure

DO-35

 

 

 

Outline

1

2

Cathode band

1. Cathode

2. Anode

1SS81

Absolute Maximum Ratings*2 (Ta = 25°C)

Item

Symbol

Value

Unit

Peak reverse voltage

V

*1

200

V

 

RM

 

 

Reverse voltage

VR

 

150

V

 

 

 

 

 

Peak forward current

IFM

 

625

mA

Non-Repetitive peak forward surge current

IFSM*2

1

A

 

 

 

 

 

Average forward current

IO

 

200

mA

 

 

 

 

 

Power dissipation

Pd

 

400

mW

 

 

 

 

 

Junction temperature

Tj

 

175

°C

 

 

 

 

Storage temperature

Tstg

–65 to +175

°C

Notes: 1. Reverse voltage in excess of peak reverse voltage may deteriorate electrical characteristic. 2. Within 1s forward surge current.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

 

 

 

 

 

Max

 

 

Unit

 

 

Test Condition

Forward voltage

VF

1.0

 

 

 

 

V

I

F = 100mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Reverse current

IR1

0.2

 

 

 

 

 

 

µA

 

 

VR = 150V

 

IR2

100

 

 

 

 

 

 

 

V

R = 200V

Capacitance

C

1.5

 

 

 

 

 

 

 

pF

V

R = 0V, f = 1MHz

 

 

 

 

 

 

 

 

 

 

 

 

Reverse recovery time

trr

100

 

 

 

 

ns

I

F = IR = 30mA, Irr = 3mA, RL = 100Ω

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

Loading...
+ 4 hidden pages