1SS120
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-167B (Z)
Rev. 2
Aug. 1995
Features
•Low capacitance. (C = 3.0pF max)
•Short reverse recovery time. (trr = 3.5ns max)
•Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No. |
Cathode band |
Mark |
Package Code |
1SS120 |
Light Blue |
1 |
MHD |
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Outline
1 |
1 |
2 |
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Cathode band |
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1. |
Cathode |
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2. |
Anode |
1SS120
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Value |
Unit |
Peak reverse voltage |
VRM |
70 |
V |
Reverse voltage |
VR |
60 |
V |
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Peak forward current |
IFM |
450 |
mA |
Non-Repetitive peak forward surge current |
IFSM* |
1 |
A |
Average forward current |
IO |
150 |
mA |
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Power dissipation |
Pd |
250 |
mW |
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Junction temperature |
Tj |
175 |
°C |
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Storage temperature |
Tstg |
–65 to +175 |
°C |
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Note: Within 1s forward surge current. |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Condition |
Forward voltage |
VF |
— |
— |
0.8 |
V |
I |
F = 10mA |
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Reverse current |
IR |
— |
— |
0.1 |
µA |
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VR = 60V |
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Capacitance |
C |
— |
— |
3.0 |
pF |
V |
R = 1V, f = 1MHz |
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Reverse recovery time |
trr* |
— |
— |
3.5 |
ns |
I |
F = 10mA, VR = 6V, RL = 50Ω |
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Note: Reverse recovery time test circuit
DC |
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3kΩ |
Supply |
0.1 F |
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Ro = 50Ω Pulse |
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Generator |
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Sampling |
Rin = 50Ω |
Oscilloscope |
Trigger
2