HIT 1SS119 Datasheet

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HIT 1SS119 Datasheet

1SS119

Silicon Epitaxial Planar Diode for High Speed Switching

ADE-208-180A (Z)

Rev. 1

Aug. 1995

Features

Low capacitance. (C = 3.0pF max)

Short reverse recovery time. (trr = 3.5ns max)

Small glass package (MHD) enables easy mounting and high reliability.

Ordering Information

Type No.

Cathode band

Package Code

1SS119

Light Blue

MHD

 

 

 

Outline

1

2

Cathode band

1. Cathode

2. Anode

1SS119

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

Peak reverse voltage

VRM

35

V

Reverse voltage

VR

30

V

 

 

 

 

Peak forward current

IFM

450

mA

Non-Repetitive peak forward surge current

IFSM*

1

A

Average forward current

IO

150

mA

 

 

 

 

Power dissipation

Pd

250

mW

 

 

 

 

Junction temperature

Tj

175

°C

 

 

 

 

Storage temperature

Tstg

–65 to +175

°C

 

 

 

 

Note: Within 1s forward surge current.

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

Forward voltage

VF

0.8

V

I

F = 10mA

 

 

 

 

 

 

 

 

Reverse current

IR

0.1

µA

 

VR = 30V

 

 

 

 

 

 

 

 

Capacitance

C

3.0

pF

V

R = 1V, f = 1MHz

 

 

 

 

 

 

 

 

Reverse recovery time

trr*

3.5

ns

I

F = 10mA, VR = 6V, RL = 50Ω

 

 

 

 

 

 

 

 

Note: Reverse recovery time test circuit

DC

 

3kΩ

Supply

0.1 F

Ro = 50Ω Pulse

 

 

 

Generator

 

 

Sampling

Rin = 50Ω

Oscilloscope

Trigger

2

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