HIT 1SS106 Datasheet

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HIT 1SS106 Datasheet

1SS106

Silicon Schottky Barrier Diode for Various Detector, High Speed Switching

ADE-208-153A (Z)

Rev. 1

Oct. 1998

Features

Detection efficiency is very good.

Small temperature coefficient.

High reliability with glass seal.

Ordering Information

Type No.

Cathode

2nd band

Mark

Package Code

1SS106

White

White

H

DO-35

 

 

 

 

 

Outline

1

H

2

2nd band

Cathode band

1. Cathode

2. Anode

1SS106

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

VR

10

V

Average rectified current

IO

30

mA

 

 

 

 

Junction temperature

Tj

125

°C

 

 

 

 

Storage temperature

Tstg

–55 to +125

°C

 

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

 

 

 

 

Max

 

 

 

 

Unit

 

Test Condition

Forward current

IF

4.5

 

 

 

 

 

mA

V

F = 1V

Reverse current

IR

70

 

 

 

 

 

 

µA

 

VR = 6V

 

 

 

 

 

 

 

 

 

 

 

 

Capacitance

C

1.5

 

 

 

 

pF

V

R = 1V, f = 1MHz

 

 

 

 

 

 

 

 

 

Rectifier efficiency

η

70

 

 

%

Vin = 2Vrms, f = 40MHz, R L = 5kΩ,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CL = 20pF

 

 

 

 

 

 

 

 

ESD-Capability *1

100

 

V

C = 200pF, Both forward and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

reverse direction 1 pulse.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1. Failure criterion; IR ≥ 140µA at VR = 6V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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