GSI GS832272C-250, GS832272C-225, GS832272C-200, GS832272C-166, GS832272C-150 Datasheet

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Rev: 1.00 10/2001 1/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
ByteSafe is a Trademark of Giga Semiconductor, Inc. (GSI Technology).
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
2M x 18, 1M x 36, 512K x 72
36Mb S/DCD Sync Burst SRAMs
250 MHz133MHz
DD
2.5 V or 3.3 V I/O
119- and 209-Pin BGA
Commercial Temp
Industrial Temp
Features
FT pin for user-configurable flow through or pipeline operation
Single/Dual Cycle Deselect selectable
IEEE 1149.1 JTAG-compatible Boundary Scan
On-chip read parity checking; even or odd selectable
ZQ mode pin for user-selectable high/low output drive
On-chip parity encoding and error detection
2.5 V or 3.3 V +10%/–5% core power supply
2.5 V or 3.3 V I/O supply
LBO pin for Linear or Interleaved Burst mode
Internal input resistors on mode pins allow floating mode pins
Default to SCD x18/x36 Interleaved Pipeline mode
Byte Write (BW) and/or Global Write (GW) operation
Internal self-timed write cycle
Automatic power-down for portable applications
JEDEC-standard 119- and 209-bump BGA package
Functional Description
Applications
The GS832218/36/72 is a 37,748,736-bit high performance
synchronous SRAM with a 2-bit burst address counter. Although
of a type originally developed for Level 2 Cache applications
supporting high performance CPUs, the device now finds
application in synchronous SRAM applications, ranging from
DSP main store to networking chip set support.
Controls
Addresses, data I/Os, chip enable (E1), address burst control
inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW,
GW) are synchronous and are controlled by a positive-edge-
triggered clock input (CK). Output enable (G) and power down
control (ZZ) are asynchronous inputs. Burst cycles can be initiated
with either ADSP or ADSC inputs. In Burst mode, subsequent
burst addresses are generated internally and are controlled by
ADV. The burst address counter may be configured to count in
either linear or interleave order with the Linear Burst Order (LBO)
input. The Burst function need not be used. New addresses can be
loaded on every cycle with no degradation of chip performance.
Flow Through/Pipeline Reads
The function of the Data Output register can be controlled by the
user via the FT mode . Holding the FT mode pin low places the
RAM in Flow Through mode, causing output data to bypass the
Data Output Register. Holding FT high places the RAM in
Pipeline mode, activating the rising-edge-triggered Data Output
Register.
SCD and DCD Pipelined Reads
The GS832218/36/72 is a SCD (Single Cycle Deselect) and DCD
(Dual Cycle Deselect) pipelined synchronous SRAM. DCD
SRAMs pipeline disable commands to the same degree as read
commands. SCD SRAMs pipeline deselect commands one stage
less than read commands. SCD RAMs begin turning off their
outputs immediately after the deselect command has been
captured in the input registers. DCD RAMs hold the deselect
command for one full cycle and then begin turning off their
outputs just after the second rising edge of clock. The user may
configure this SRAM for either mode of operation using the SCD
mode input.
Byte Write and Global Write
Byte write operation is performed by using Byte Write enable
(BW) input combined with one or more individual byte write
signals (Bx). In addition, Global Write (GW) is available for
writing all bytes at one time, regardless of the Byte Write control
inputs.
FLXDrive™
The ZQ pin allows selection between high drive strength (ZQ low)
for multi-drop bus applications and normal drive strength (ZQ
floating or high) point-to-point applications. See the Output Driver
Characteristics chart for details.
Sleep Mode
Low power (Sleep mode) is attained through the assertion (High)
of the ZZ signal, or by stopping the clock (CK). Memory data is
retained during Sleep mode.
Core and Interface Voltages
The GS832218/36/72 operates on a 2.5 V or 3.3 V power supply.
All input are 3.3 V and 2.5 V compatible. Separate output power
(V
DDQ
) pins are used to decouple output noise from the internal
circuits and are 3.3 V and 2.5 V compatible.
-250 -225 -200 -166 -150 -133 Unit
Pipeline
3-1-1-1
t
KQ
tCycle
2.3
4.0
2.5
4.4
3.0
5.0
3.5
6.0
3.8
6.6
4.0
7.5
ns
ns
3.3 V
Curr (x18)
Curr (x36)
Curr (x72)
365
560
660
335
510
600
305
460
540
265
400
460
245
370
430
215
330
380
mA
mA
mA
2.5 V
Curr (x18)
Curr (x36)
Curr (x72)
360
550
640
330
500
590
305
460
530
260
390
450
240
360
420
215
330
370
mA
mA
mA
Flow
Through
2-1-1-1
t
KQ
tCycle
6.0
7.0
6.5
7.5
7.5
8.5
8.5
10
10
10
11
15
ns
ns
3.3 V
Curr (x18)
Curr (x36)
Curr (x72)
235
300
350
230
300
350
210
270
300
200
270
300
195
270
300
150
200
220
mA
mA
mA
2.5 V
Curr (x18)
Curr (x36)
Curr (x72)
235
300
340
230
300
340
210
270
300
200
270
300
195
270
300
145
190
220
mA
mA
mA
Rev: 1.00 10/2001 2/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832272B Pad Out
209-Bump BGA—Top View
1 2 3 4 5 6 7 8 9 10 11
A DQG5 DQG1 A15 E2 ADSP ADSC ADV E3 A17 DQB1 DQB5 A
B DQG6 DQG2 BC BG NC BW A16 BB BF DQB2 DQB6 B
C DQG7 DQG3 BH BD NC E1 NC BE BA DQB3 DQB7 C
D DQG8 DQG4
V
SS
NC NC G GW NC
V
SS
DQB4 DQB8 D
E DQPG9 DQPC9
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQPF9 DQPB9 E
F DQC4 DQC8
V
SS
V
SS
V
SS
ZQ
V
SS
V
SS
V
SS
DQF8 DQF4 F
G DQC3 DQC7
V
DDQ
V
DDQ
V
DD
MCH
V
DD
V
DDQ
V
DDQ
DQF7 DQF3 G
H DQC2 DQC6
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQF6 DQF2 H
J DQC1 DQC5
V
DDQ
V
DDQ
V
DD
MCL
V
DD
V
DDQ
V
DDQ
DQF5 DQF1 J
K NC NC CK NC
V
SS
MCL
V
SS
NC NC NC NC K
L DQH1 DQH5
V
DDQ
V
DDQ
V
DD
FT
V
DD
V
DDQ
V
DDQ
DQA5 DQA1 L
M DQH2 DQH6
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQA6 DQA2 M
N DQH3 DQH7
V
DDQ
V
DDQ
V
DD
SCD
V
DD
V
DDQ
V
DDQ
DQA7 DQA3 N
P DQH4 DQH8
V
SS
V
SS
V
SS
ZZ
V
SS
V
SS
V
SS
DQA8 DQA4 P
R DQPD9 DQPH9
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQPA9 DQPE9 R
T DQD8 DQD4
V
SS
NC NC LBO NC NC
V
SS
DQE4 DQE8 T
U DQD7 DQD3 NC A14 A13 A12 A11 A10 A18 DQE3 DQE7 U
V DQD6 DQD2 A9 A8 A7 A1 A6 A5 A4 DQE2 DQE6 V
W DQD5 DQD1 TMS TDI A3 A0 A2 TDO TCK DQE1 DQE5 W
11 x 19 Bump BGA—14 x 22 mm
2
Body—1 mm Bump Pitch
Rev: 1.00 10/2001 3/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832236C Pad Out
209-Bump BGA—Top View
1 2 3 4 5 6 7 8 9 10 11
A NC NC A15 E2 ADSP ADSC ADV E3 A17 DQB1 DQB5 A
B NC NC BC NC A19 BW A16 BB NC DQB2 DQB6 B
C NC NC NC BD NC E1 NC NC BA DQB3 DQB7 C
D NC NC
V
SS
NC NC G GW NC
V
SS
DQB4 DQB8 D
E NC DQPC9
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
NC DQPB9 E
F DQC4 DQC8
V
SS
V
SS
V
SS
ZQ
V
SS
V
SS
V
SS
NC NC F
G DQC3 DQC7
V
DDQ
V
DDQ
V
DD
MCH
V
DD
V
DDQ
V
DDQ
NC NC G
H DQC2 DQC6
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
NC NC H
J DQC1 DQC5
V
DDQ
V
DDQ
V
DD
MCL
V
DD
V
DDQ
V
DDQ
NC NC J
K NC NC CK NC
V
SS
MCL
V
SS
NC NC NC NC K
L NC NC
V
DDQ
V
DDQ
V
DD
FT
V
DD
V
DDQ
V
DDQ
DQA5 DQA1 L
M NC NC
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQA6 DQA2 M
N NC NC
V
DDQ
V
DDQ
V
DD
SCD
V
DD
V
DDQ
V
DDQ
DQA7 DQA3 N
P NC NC
V
SS
V
SS
V
SS
ZZ
V
SS
V
SS
V
SS
DQA8 DQA4 P
R DQPD9 NC
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQPA9 NC R
T DQD8 DQD4
V
SS
NC NC LBO NC NC
V
SS
NC NC T
U DQD7 DQD3 NC A14 A13 A12 A11 A10 A18 NC NC U
V DQD6 DQD2 A9 A8 A7 A1 A6 A5 A4 NC NC V
W DQD5 DQD1 TMS TDI A3 A0 A2 TDO TCK NC NC W
11 x 19 Bump BGA—14 x 22 mm
2
Body—1 mm Bump Pitch
Rev: 1.00 10/2001 4/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832218C Pad Out
209-Bump BGA—Top View
1 2 3 4 5 6 7 8 9 10 11
A NC NC A15 E2 ADSP ADSC ADV E3 A17 NC NC A
B NC NC BB NC A19 BW A16 NC NC NC NC B
C NC NC NC NC NC E1 A20 NC BA NC NC C
D NC NC
V
SS
NC NC G GW NC
V
SS
NC NC D
E NC DQPB9
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
NC NC E
F DQB4 DQB8
V
SS
V
SS
V
SS
ZQ
V
SS
V
SS
V
SS
NC NC F
G DQB3 DQB7
V
DDQ
V
DDQ
V
DD
MCH
V
DD
V
DDQ
V
DDQ
NC NC G
H DQB2 DQB6
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
NC NC H
J DQB1 DQB5
V
DDQ
V
DDQ
V
DD
MCL
V
DD
V
DDQ
V
DDQ
NC NC J
K NC NC CK NC
V
SS
MCL
V
SS
NC NC NC NC K
L NC NC
V
DDQ
V
DDQ
V
DD
FT
V
DD
V
DDQ
V
DDQ
DQA5 DQA1 L
M NC NC
V
SS
V
SS
V
SS
MCL
V
SS
V
SS
V
SS
DQA6 DQA2 M
N NC NC
V
DDQ
V
DDQ
V
DD
SCD
V
DD
V
DDQ
V
DDQ
DQA7 DQA3 N
P NC NC
V
SS
V
SS
V
SS
ZZ
V
SS
V
SS
V
SS
DQA8 DQA4 P
R NC NC
V
DDQ
V
DDQ
V
DD
V
DD
V
DD
V
DDQ
V
DDQ
DQPA9 NC R
T NC NC
V
SS
NC NC LBO NC NC
V
SS
NC NC T
U NC NC NC A14 A13 A12 A11 A10 A18 NC NC U
V NC NC A9 A8 A7 A1 A6 A5 A4 NC NC V
W NC NC TMS TDI A3 A0 A2 TDO TCK NC NC W
11 x 19 Bump BGA—14 x 22 mm
2
Body—1 mm Bump Pitch
Rev: 1.00 10/2001 5/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832218/36/72 209-Bump BGA Pin Description
Pin Location Symbol Type Description
W6, V6 A0, A1 I Address field LSBs and Address Counter Preset Inputs.
W7, W5, V9, V8, V7, V5, V4, V3, U8, U7, U6,
U5, U4, A3, B7, A9, U9
An I Address Inputs
B5 A19 I Address Inputs (x36/x18 Versions)
C7 A20 I Address Inputs (x18 Version)
L11, M11, N11, P11, L10, M10, N10, P10, R10
A10, B10, C10, D10, A11, B11, C11, D11, E11
J1, H1, G1, F1, J2, H2, G2, F2, E2
W2, V2, U2, T2, W1, V1, U1, T1, R1
W10, V10, U10, T10, W11, V11, U11, T11, R11
J11, H11, G11, F11, J10, H10, G10, F10, E10
A2, B2, C2, D2, A1, B1, C1, D1, E1
L1, M1, N1, P1, L2, M2, N2, P2, R2
DQA1DQA9
DQB1DQB9
DQC1DQC9
DQD1DQD9
DQE1DQE9
DQF1DQF9
DQG1DQG9
DQH1DQH9
I/O Data Input and Output pins (x72 Version)
L11, M11, N11, P11, L10, M10, N10, P10, R10
A10, B10, C10, D10, A11, B11, C11, D11, E11
J1, H1, G1, F1, J2, H2, G2, F2, E2
W2, V2, U2, T2, W1, V1, U1, T1, R1
DQA1DQA9
DQB1DQB9
DQC1DQC9
DQD1DQD9
I/O Data Input and Output pins (x36 Version)
L11, M11, N11, P11, L10, M10, N10, P10, R10
J1, H1, G1, F1, J2, H2, G2, F2, E2
DQA1DQA9
DQB1DQB9
I/O Data Input and Output pins (x18 Version)
C9, B8
BA, BB
I Byte Write Enable for DQA, DQB I/Os; active low
B3, C4
BC,BD
I
Byte Write Enable for DQC, DQD I/Os; active low
(x72/x36 Versions)
C8, B9, B4, C3
BE, BF, BG,BH
I
Byte Write Enable for DQE, DQF, DQG, DQH I/Os; active low
(x72 Version)
B5 NC No Connect (x72 Version)
C7 NC No Connect (x72/x36 Versions)
W10, V10, U10, T10, W11, V11, U11, T11, R11
J11, H11, G11, F11, J10, H10, G10, F10, E10
A2, B2, C2, D2, A1, B1, C1, D1, E1
L1, M1, N1, P1, L2, M2, N2, P2, R2, C8, B9,
B4, C3
NC No Connect (x36/x18 Versions)
B3, C4 NC No Connect (x18 Version)
C5, D4, D5, D8, K1, K2, K4, K8, K9, K10, K11,
T4, T5, T7, T8, U3
NC No Connect
K3 CK I Clock Input Signal; active high
D7
GW
I Global Write Enable—Writes all bytes; active low
C6
E1
I Chip Enable; active low
A8
E3
I Chip Enable; active low
A4
E2
I Chip Enable; active high
Rev: 1.00 10/2001 6/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
D6
G
I Output Enable; active low
A7
ADV
I Burst address counter advance enable; active low
A5, A6
ADSP, ADSC
I Address Strobe (Processor, Cache Controller); active low
P6
ZZ
I Sleep Mode control; active high
L6
FT
I Flow Through or Pipeline mode; active low
T6
LBO
I Linear Burst Order mode; active low
N6
SCD
I Single Cycle Deselect/Dual Cycle Deselect Mode Control
G6
MCH
I Must Connect High
H6, J6, K6, M6
MCL
Must Connect Low
B6
BW
I Byte Enable; active low
F6
ZQ
I
FLXDrive Output Impedance Control
(Low = Low Impedance [High Drive], High = High Impedance [Low
Drive])
W3
TMS
I Scan Test Mode Select
W4
TDI
I Scan Test Data In
W8
TDO
O Scan Test Data Out
W9
TCK
I Scan Test Clock
E5, E6, E7, G5, G7, J5, J7, L5, L7, N5, N7, R5,
R6, R7
V
DD
I Core power supply
D3, D9, F3, F4, F5, F7, F8, F9, H3, H4, H5, H7,
H8, H9, K5, K7, M3, M4, M5, M7, M8, M9, P3,
P4, P5, P7, P8, P9, T3, T9
V
SS
I I/O and Core Ground
E3, E4, E8, E9, G3, G4, G8, G9, J3, J4, J8, J9,
L3, L4, L8, L9, N3, N4, N8, N9, R3, R4, R8, R9
V
DDQ
I Output driver power supply
GS832218/36/72 209-Bump BGA Pin Description
Pin Location Symbol Type Description
Rev: 1.00 10/2001 7/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832236B Pad Out
119-Bump BGA—Top View
1 2 3 4 5 6 7
A
V
DDQ
A6 A7 ADSP A8 A9
V
DDQ
A
B NC A18 A4 ADSC A15 A17 NC B
C NC A5 A3
V
DD
A14 A16 NC C
D DQC4 DQPC9
V
SS
ZQ
V
SS
DQPB9 DQB4 D
E DQC3 DQC8
V
SS
E1
V
SS
DQB8 DQB3 E
F
V
DDQ
DQC7
V
SS
G
V
SS
DQB7
V
DDQ
F
G DQC2 DQC6 BC ADV BB DQB6 DQB2 G
H DQC1 DQC5
V
SS
GW
V
SS
DQB5 DQB1 H
J
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
J
K DQD1 DQD5
V
SS
CK
V
SS
DQA5 DQA4 K
L DQD2 DQD6 BD SCD BA DQA6 DQA3 L
M
V
DDQ
DQD7
V
SS
BW
V
SS
DQA7
V
DDQ
M
N DQD3 DQD8
V
SS
A1
V
SS
DQA8 DQA2 N
P DQD4 DQPD9
V
SS
A0
V
SS
DQPA9 DQA1 P
R NC A2 LBO
V
DD
FT A13 NC R
T NC NC A10 A11 A12 A19 ZZ T
U
V
DDQ
TMS TDI TCK TDO NC
V
DDQ
U
7 x 17 Bump BGA—14 x 22 mm
2
Body—1.27 mm Bump Pitch
Rev: 1.00 10/2001 8/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832218B Pad Out
119-Bump BGA—Top View
1 2 3 4 5 6 7
A
V
DDQ
A6 A7 ADSP A8 A9
V
DDQ
A
B NC A18 A4 ADSC A15 A17 NC B
C NC A5 A3
V
DD
A14 A16 NC C
D DQB1 NC
V
SS
ZQ
V
SS
DQPA9 NC D
E NC DQB2
V
SS
E1
V
SS
NC DQA8 E
F
V
DDQ
NC
V
SS
G
V
SS
DQA7
V
DDQ
F
G NC DQB3 BB ADV NC NC DQA6 G
H DQB4 NC
V
SS
GW
V
SS
DQA5 NC H
J
V
DDQ
V
DD
NC
V
DD
NC
V
DD
V
DDQ
J
K NC DQB5
V
SS
CK
V
SS
NC DQA4 K
L DQB6 NC NC SCD BA DQA3 NC L
M
V
DDQ
DQB7
V
SS
BW
V
SS
NC
V
DDQ
M
N DQB8 NC
V
SS
A1
V
SS
DQA2 NC N
P NC DQPB9
V
SS
A0
V
SS
NC DQA1 P
R NC A2 LBO
V
DD
FT A13 NC R
T NC A10 A11 A20 A12 A19 ZZ T
U
V
DDQ
TMS TDI TCK TDO NC
V
DDQ
U
7 x 17 Bump BGA—14 x 22 mm
2
Body—1.27 mm Bump Pitch
Rev: 1.00 10/2001 9/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832218/36 119-Bump BGA Pin Description
Pin Location Symbol Type Description
P4, N4 A0, A1 I Address field LSBs and Address Counter Preset Inputs
R2, C3, B3, C2, A2, A3, A5, A6, T3,
T5, R6, C5, B5, C6, B6, B2
An I Address Inputs
T4, T6 An Address Input (x36 Version)
T2 NC No Connect (x36 Version)
T2, T6, T4 An I Address Input (x18 Version)
K7, L7, N7, P7, K6, L6, M6, N6
H7, G7, E7, D7, H6, G6, F6, E6
H1, G1, E1, D1, H2, G2, F2, E2
K1, L1, N1, P1, K2, L2, M2, N2
DQA1–DQA8
DQB1–DQB8
DQC1–DQC8
DQD1–DQD8
I/O Data Input and Output pins. (x36 Version)
P6, D6, D2, P2
DQA9, DQB9,
DQC9, DQD9
I/O Data Input and Output pins. (x36 Version)
L5, G5, G3, L3 BA, BB, BC, BD I Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low (x36 Version)
P7, N6, L6, K7, H6, G7, F6, E7, D6
D1, E2, G2, H1, K2, L1, M2, N1, P2
DQA1–DQA9
DQB1–DQB9
I/O Data Input and Output pins (x18 Version)
L5, G3 BA, BB I Byte Write Enable for DQA, DQB I/Os; active low (x18 Version)
B1, C1, R1, T1, U6, B7, C7, J3, J5,
R7
NC No Connect
P6, N7, M6, L7, K6, H7, G6, E6, D7,
D2, E1, F2, G1, H2, K1, L2, N2, P1,
G5, L3
NC No Connect (x18 Version)
K4 CK I Clock Input Signal; active high
M4 BW I Byte Write—Writes all enabled bytes; active low
H4 GW I Global Write Enable—Writes all bytes; active low
E4 E1 I Chip Enable; active low
F4 G I Output Enable; active low
G4 ADV I Burst address counter advance enable; active low
A4, B4 ADSP, ADSC I Address Strobe (Processor, Cache Controller); active low
T7 ZZ I Sleep mode control; active high
R5 FT I Flow Through or Pipeline mode; active low
R3 LBO I Linear Burst Order mode; active low
D4 ZQ I
FLXDrive Output Impedance Control (Low = Low Impedance [High Drive],
High = High Impedance [Low Drive])
L4 SCD I Single Cycle Deselect/Dual Cyle Deselect Mode Control
U2
TMS
I Scan Test Mode Select
Rev: 1.00 10/2001 10/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
U3
TDI
I Scan Test Data In
U5
TDO
O Scan Test Data Out
U4
TCK
I Scan Test Clock
J2, C4, J4, R4, J6
V
DD
I Core power supply
D3, E3, F3, H3, K3, M3, N3, P3, D5,
E5, F5, H5, K5, M5, N5, P5
V
SS
I I/O and Core Ground
L4
V
SS
I I/O and Core Ground
A1, F1, J1, M1, U1, A7, F7, J7, M7,
U7
V
DDQ
I Output driver power supply
GS832218/36 119-Bump BGA Pin Description
Pin Location Symbol Type Description
Rev: 1.00 10/2001 11/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS832218/36 (PE = 0) Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D Q
D Q
Register
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
DQ
Register
DQ
Register
A0–An
LBO
ADV
CK
ADSC
ADSP
GW
BW
E1
FT
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q D
DQx0–DQx9
NC
Parity
NC
Parity
Encode
Compare
36
4
36
36
4
32
Note: Only x36 version shown for simplicity.
SCD
36
36
D Q
Register
4
BA
BB
BC
BD
Rev: 1.00 10/2001 12/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
GS816218/36 (PE = 1) x32 Mode Block Diagram
A1
A0
A0
A1
D0
D1
Q1
Q0
Counter
Load
D Q
D Q
Register
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
D Q
Register
DQ
Register
DQ
Register
A0–An
LBO
ADV
CK
ADSC
ADSP
GW
BW
BA
BB
BC
BD
E1
FT
G
ZZ
Power Down
Control
Memory
Array
36
36
4
A
Q D
DQx0–DQx8
NC
Parity
NC
Parity
Encode
Compare
32
4
32
36
4
32
Note: Only x36 version shown for simplicity.
SCD
D Q
Register
D Q
Register
Parity
Encode
32
4
32
36
Rev: 1.00 10/2001 13/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
Note:
There are pull-up devices on the ZQ, SCD, and FT pins and a pull-down device on the PE and ZZ pins, so those input pins can be unconnected
and the chip will operate in the default states as specified in the above tables.
Enable / Disable Parity I/O Pins
This SRAM allows the user to configure the device to operate in Parity I/O active (x18, x36, or x72) or in Parity I/O inactive (x16,
x32, or x64) mode. Holding the PE bump low or letting it float will activate the 9th I/O on each byte of the RAM. Grounding PE
deactivates the 9th I/O of each byte, although the bit in each byte of the memory array remains active to store and recall parity bits
generated and read into the ByteSafe parity circuits.
Burst Counter Sequences
BPR 1999.05.18
Mode Pin Functions
Mode Name
Pin
Name
State Function
Burst Order Control LBO
L Linear Burst
H Interleaved Burst
Output Register Control FT
L Flow Through
H or NC Pipeline
Power Down Control ZZ
L or NC Active
H
Standby, I
DD
= I
SB
Single/Dual Cycle Deselect Control SCD
L Dual Cycle Deselect
H or NC Single Cycle Deselect
Parity Enable PE
L or NC Activate 9th I/O’s (x18/36 Mode)
H Deactivate 9th I/O’s (x16/32 Mode)
FLXDrive Output Impedance Control ZQ
L High Drive (Low Impedance)
H or NC Low Drive (High Impedance)
Linear Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
I
nterleaved Burst Sequence
Note: The burst counter wraps to initial state on the 5th clock.
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 10 11 00
3rd address 10 11 00 01
4th address 11 00 01 10
A[1:0] A[1:0] A[1:0] A[1:0]
1st address 00 01 10 11
2nd address 01 00 11 10
3rd address 10 11 00 01
4th address 11 10 01 00
Rev: 1.00 10/2001 14/44 © 2001, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Product Preview
GS832218(B/C)/GS832236(B/C)/GS832272(C)
Byte Write Truth Table
Notes:
1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs.
2. Byte Write Enable inputs BA, BB, BC, and/or BD may be used in any combination with BW to write single or multiple bytes.
3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs.
4. Bytes “C” and “D” are only available on the x36 version.
Function GW BW BA BB BC BD Notes
Read H H X X X X 1
Read H L H H H H 1
Write byte a H L L H H H 2, 3
Write byte b H L H L H H 2, 3
Write byte c H L H H L H 2, 3, 4
Write byte d H L H H H L 2, 3, 4
Write all bytes H L L L L L 2, 3, 4
Write all bytes L X X X X X
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