GSI GS8162Z72C-133I, GS8162Z72C-133, GS8162Z36D-250I, GS8162Z36D-250, GS8162Z36D-225I Datasheet

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GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

119, 165, & 209 BGA

Commercial Temp

Industrial Temp

18Mb Pipelined and Flow Through

Synchronous NBT SRAM

250MHz–133 MHz

2.5V or 3.3 V VDD

2.5V or 3.3 V I/O

Features

NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs

2.5 V or 3.3 V +10%/–10% core power supply

2.5 V or 3.3 V I/O supply

User-configurable Pipeline and Flow Through mode

ZQ mode pin for user-selectable high/low output drive

IEEE 1149.1 JTAG-compatible Boundary Scan

On-chip write parity checking; even or odd selectable

On-chip parity encoding and error detection

LBO pin for Linear or Interleave Burst mode

Pin-compatible with 2M, 4M, and 8M devices

Byte write operation (9-bit Bytes)

3 chip enable signals for easy depth expansion

ZZ Pin for automatic power-down

JEDEC-standard 119-, 165-, or 209-Bump BGA package

 

 

-250

-225

-200 -166 -150 -133 Unit

Pipeline

tKQ

2.5

2.7

3.0

3.4

3.8

4.0

ns

3-1-1-1

tCycle

4.0

4.4

5.0

6.0

6.7

7.5

ns

 

 

 

 

 

 

 

 

 

3.3 V

Curr (x18)

280

255

230

200

185

165

mA

Curr (x36)

330

300

270

230

215

190

mA

 

Curr (x72)

n/a

n/a

350

300

270

245

mA

2.5 V

Curr (x18)

275

250

230

195

180

165

mA

Curr (x36)

320

295

265

225

210

185

mA

 

Curr (x72)

n/a

n/a

335

290

260

235

mA

 

 

 

 

 

 

 

 

 

Flow

tKQ

5.5

6.0

6.5

7.0

7.5

8.5

ns

Through

tCycle

5.5

6.0

6.5

7.0

7.5

8.5

ns

2-1-1-1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3.3 V

Curr (x18)

175

165

160

150

145

135

mA

Curr (x36)

200

190

180

170

165

150

mA

 

Curr (x72)

n/a

n/a

225

115

210

185

mA

2.5 V

Curr (x18)

175

165

160

150

145

135

mA

Curr (x36)

200

190

180

170

165

150

mA

 

Curr (x72)

n/a

n/a

225

115

210

185

mA

 

 

 

 

 

 

 

 

 

Functional Description

read/write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the Sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing.

The GS8162Z18(B/D)/36(B/D)/72(C) may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edge-triggered registers that capture input signals, the device incorporates a rising edge triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge-triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock.

The GS8162Z18(B/D)/36(B/D)/72(C) is implemented with GSI's high performance CMOS technology and is available in a JEDEC-standard 119-bump (x18 & x36), 165-bump (x18 & x36), or 209-bump (x72) BGA package.

The GS8162Z18(B/D)/36(B/D)/72(C) is an 18Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles.

Because it is a synchronous device, address, data inputs, and

Rev: 2.18a 12/2002

1/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 

NoBL is a trademark of Cypress Semiconductor Corp.. NtRAM is a trademark of Samsung Electronics Co.. ZBT is a trademark of Integrated Device Technology, Inc.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

GS8162Z72 Pad Out

209-Bump BGA—Top View (Package C)

 

1

2

3

4

5

6

 

 

 

 

7

 

8

9

10

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

DQG5

DQG1

A13

 

 

E2

A14

ADV

A15

 

 

 

 

A17

DQB1

DQB5

 

E3

B

DQG6

DQG2

 

 

 

 

 

 

 

NC

 

 

 

 

 

 

 

 

 

A16

 

 

 

 

 

 

 

 

DQB2

DQB6

 

BC

BG

W

BB

BF

C

DQG7

DQG3

 

 

 

 

 

 

 

NC

 

 

 

 

 

 

 

 

NC

 

 

 

 

 

 

DQB3

DQB7

 

BH

 

BD

E1

 

BE

BA

D

DQG8

DQG4

VSS

 

NC

NC

 

 

 

 

 

 

 

NC

NC

VSS

DQB4

DQB8

 

 

 

 

G

E

DQG9

DQC9

VDDQ

VDDQ

VDD

 

VDD

VDD

VDDQ

VDDQ

DQF9

DQB9

F

DQC4

DQC8

VSS

 

VSS

VSS

 

ZQ

VSS

VSS

VSS

DQF8

DQF4

G

DQC3

DQC7

VDDQ

VDDQ

VDD

MCH

VDD

VDDQ

VDDQ

DQF7

DQF3

H

DQC2

DQC6

VSS

 

VSS

VSS

MCL

VSS

VSS

VSS

DQF6

DQF2

J

DQC1

DQC5

VDDQ

VDDQ

VDD

MCH

VDD

VDDQ

VDDQ

DQF5

DQF1

K

NC

NC

 

CK

 

 

NC

VSS

MCL

VSS

NC

NC

NC

NC

L

DQH1

DQH5

VDDQ

VDDQ

VDD

 

 

 

 

 

VDD

VDDQ

VDDQ

DQA5

DQA1

 

 

FT

M

DQH2

DQH6

VSS

 

VSS

VSS

MCL

VSS

VSS

VSS

DQA6

DQA2

N

DQH3

DQH7

VDDQ

VDDQ

VDD

MCH

VDD

VDDQ

VDDQ

DQA7

DQA3

P

DQH4

DQH8

VSS

 

VSS

VSS

 

 

ZZ

VSS

VSS

VSS

DQA8

DQA4

R

DQD9

DQH9

VDDQ

VDDQ

VDD

 

VDD

VDD

VDDQ

VDDQ

DQA9

DQE9

T

DQD8

DQD4

VSS

 

NC

NC

 

 

 

 

 

 

NC

VSS

DQE4

DQE8

 

 

LBO

PE

U

DQD7

DQD3

NC

A12

NC

 

A11

NC

A10

NC

DQE3

DQE7

V

DQD6

DQD2

 

A9

 

 

A8

A7

 

 

A1

 

A6

 

A5

 

 

A4

DQE2

DQE6

W

DQD5

DQD1

TMS

TDI

A3

 

 

A0

 

A2

TDO

TCK

DQE1

DQE5

Rev 10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

11 x 19 Bump BGA—14 x 22 mm2 Body—1 mm Bump Pitch

 

 

 

 

 

 

 

Rev: 2.18a 12/2002

2/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GS8162Z72 BGA Pin Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Type

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A0, A1

 

 

 

I

 

Address field LSBs and Address Counter Preset Inputs

 

 

 

 

 

 

 

 

 

 

 

An

 

 

 

I

 

Address Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQA1–DQA9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQB1–DQB9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQC1–DQC9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQD1–DQD9

 

I/O

 

Data Input and Output pins

 

 

 

 

 

DQE1–DQE9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQF1–DQF9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQG1–DQG9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQH1–DQH9

 

 

 

 

 

 

 

 

 

 

 

 

 

A,

 

B,

 

 

 

 

C,

 

D,

 

E,

 

F,

 

 

 

 

 

 

 

 

Byte Write Enable for DQA, DQB, DQC, DQD, DQE,

 

 

 

B

B

B

B

B

B

 

 

 

I

 

 

 

 

 

 

BG,BH

 

 

 

 

DQF, DQG, DQH I/Os; active low

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NC

 

 

No Connect

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CK

 

 

 

I

 

Clock Input Signal; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Write Enable. Writes all enabled bytes; active low

 

 

 

 

 

 

 

 

 

 

 

 

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1,

 

3

 

 

 

I

 

Chip Enable; active low

 

 

 

 

 

 

 

E

E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

E2

 

 

 

I

 

Chip Enable; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Output Enable; active low

 

 

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

 

 

 

ZZ

 

 

 

I

 

Sleep Mode control; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Flow Through or Pipeline mode; active low

 

 

 

 

 

 

 

 

 

 

 

 

FT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Linear Burst Order mode; active low

 

 

 

 

 

 

 

 

LBO

 

 

 

 

 

 

 

 

 

MCH

 

 

 

I

 

Must Connect High

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MCL

 

 

 

 

 

 

 

 

Must Connect Low

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36 Mode)

 

 

 

 

 

 

 

 

 

 

PE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

Byte Enable; active low

 

 

 

 

 

 

 

 

 

BW

 

 

 

 

 

 

 

 

 

 

 

ZQ

 

 

 

I

 

FLXDrive Output Impedance Control

 

 

 

 

 

 

 

 

 

 

 

 

 

(Low = Low Impedance [High Drive], High = High Impedance [Low Drive])

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TMS

 

 

 

I

 

Scan Test Mode Select

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDI

 

 

 

I

 

Scan Test Data In

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

O

 

Scan Test Data Out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TCK

 

 

 

I

 

Scan Test Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

 

 

 

I

 

Core power supply

 

 

 

 

 

 

 

 

VSS

 

 

 

I

 

I/O and Core Ground

 

 

 

 

 

 

 

VDDQ

 

 

 

I

 

Output driver power supply

 

Rev: 2.18a 12/2002

3/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

165 Bump BGA—x18 Commom I/O—Top View (Package D)

 

1

 

 

2

3

 

4

 

5

 

6

 

 

7

 

8

 

9

10

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

NC

A6

 

 

 

 

 

 

NC

 

 

 

 

 

 

 

 

ADV

A17

A8

A19

A

 

E1

 

 

BB

 

 

E3

 

 

CKE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

 

NC

A7

 

E2

NC

 

 

 

CK

 

 

 

 

 

 

 

A18

A9

NC

B

 

 

BA

W

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

NC

NC

VDDQ

VSS

VSS

VSS

VSS

 

VSS

VDDQ

NC

DQA

C

D

 

NC

DQB

VDDQ

VDD

VSS

VSS

VSS

 

VDD

VDDQ

NC

DQA

D

E

 

NC

DQB

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

NC

DQA

E

F

 

NC

DQB

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

NC

DQA

F

G

 

NC

DQB

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

NC

DQA

G

H

 

 

 

 

 

MCH

NC

VDD

VSS

VSS

 

VSS

 

VDD

NC

ZQ

ZZ

H

 

 

FT

 

J

DQB

NC

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

DQA

NC

J

K

DQB

NC

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

DQA

NC

K

L

DQB

NC

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

DQA

NC

L

M

DQB

NC

VDDQ

VDD

VSS

VSS

 

VSS

 

VDD

VDDQ

DQA

NC

M

 

 

 

 

DNU

 

 

 

 

 

 

 

 

 

 

 

 

N

DQB

VDDQ

VSS

NC

NC

NC

 

VSS

VDDQ

NC

NC

N

P

 

NC

NC

 

A5

 

A4

TDI

 

A1

 

TDO

 

A11

A12

A14

NC

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

NC

 

A3

 

A2

TMS

 

A0

 

TCK

 

A10

A13

A15

A16

R

 

LBO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch

 

 

 

Rev: 2.18a 12/2002

4/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

165 Bump BGA—x36 Common I/O—Top View (Package D)

 

1

 

 

2

3

 

4

 

5

 

6

 

7

 

 

8

 

9

10

11

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

NC

A6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ADV

A17

A8

NC

A

 

E1

BC

BB

E3

CKE

B

 

NC

A7

 

E2

 

 

 

 

 

 

CK

 

 

 

 

 

 

 

A18

A9

NC

B

 

 

BD

 

BA

 

W

G

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

DQC

NC

VDDQ

VSS

VSS

VSS

 

VSS

VSS

VDDQ

NC

DQB

C

D

DQC

DQC

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQB

DQB

D

E

DQC

DQC

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQB

DQB

E

F

DQC

DQC

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQB

DQB

F

G

DQC

DQC

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQB

DQB

G

H

 

 

 

 

 

MCH

NC

VDD

VSS

VSS

 

VSS

VDD

NC

ZQ

ZZ

H

 

 

FT

 

J

DQD

DQD

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQA

DQA

J

K

DQD

DQD

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQA

DQA

K

L

DQD

DQD

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQA

DQA

L

M

DQD

DQD

VDDQ

VDD

VSS

VSS

 

VSS

VDD

VDDQ

DQA

DQA

M

N

DQD

DNU

VDDQ

VSS

NC

NC

 

NC

VSS

VDDQ

NC

DQA

N

P

 

NC

NC

 

A5

 

A4

TDI

 

A1

TDO

A11

A12

A14

NC

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

NC

 

A3

 

A2

TMS

 

A0

 

TCK

A10

A13

A15

A16

R

 

LBO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch

 

 

 

Rev: 2.18a 12/2002

5/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

GS8162Z36 Pad Out

119 Bump BGATop View (Package B)

 

1

2

3

 

4

 

 

 

5

 

6

7

 

A

 

 

 

 

 

 

 

 

 

 

 

VDDQ

A6

 

A7

A18

 

 

A8

 

A9

VDDQ

B

NC

E2

 

A4

ADV

A15

 

 

3

NC

 

E

C

NC

A5

 

A3

VDD

A14

A16

NC

D

DQC4

DQC9

VSS

ZQ

VSS

DQB9

DQB4

E

DQC3

DQC8

VSS

 

 

 

1

 

VSS

DQB8

DQB3

 

E

F

VDDQ

DQC7

VSS

 

 

 

 

 

 

VSS

DQB7

VDDQ

 

 

G

G

DQC2

DQC6

 

 

C

A17

 

 

 

B

DQB6

DQB2

 

B

B

H

DQC1

DQC5

VSS

 

 

 

 

VSS

DQB5

DQB1

 

W

J

VDDQ

VDD

NC

VDD

NC

VDD

VDDQ

K

DQA1

DQA5

VSS

CK

VSS

DQA5

DQA1

L

DQA2

DQA6

 

 

D

NC

 

 

 

A

DQA6

DQA2

 

B

 

B

M

VDDQ

DQA7

VSS

 

 

VSS

DQA7

VDDQ

CKE

N

DQA3

DQA8

VSS

 

A1

VSS

DQA8

DQA3

 

 

 

 

P

DQA4

DQA9

VSS

 

A0

VSS

DQA9

DQA4

R

NC

A2

 

 

VDD

 

 

 

 

A13

 

 

 

LBO

 

FT

PE

T

NC

NC

A10

A11

A12

NC

 

ZZ

U

VDDQ

TMS

TDI

TCK

TDO

NC

VDDQ

Rev: 2.18a 12/2002

6/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

GS8162Z18 Pad Out

119 Bump BGATop View (Package B)

 

1

2

3

 

4

 

 

 

5

 

6

7

 

A

 

 

 

 

 

 

 

 

 

 

 

VDDQ

A6

 

A7

A18

 

 

A8

 

A9

VDDQ

B

NC

E2

 

A4

ADV

A15

 

 

3

NC

 

E

C

NC

A5

 

A3

VDD

A14

A16

NC

D

DQB1

NC

VSS

ZQ

VSS

DQPA9

NC

E

NC

DQB2

VSS

 

 

 

1

 

VSS

NC

DQA8

 

E

F

VDDQ

NC

VSS

 

 

 

 

 

 

VSS

DQA7

VDDQ

 

 

G

G

NC

DQB3

 

 

B

A17

NC

NC

DQA6

 

B

H

DQB4

NC

VSS

 

 

 

 

VSS

DQA5

NC

 

W

J

VDDQ

VDD

NC

VDD

NC

VDD

VDDQ

K

NC

DQB5

VSS

CK

VSS

NC

DQA4

L

DQB6

NC

NC

NC

 

 

 

A

DQA3

NC

 

B

M

VDDQ

DQB7

VSS

 

 

VSS

NC

VDDQ

CKE

N

DQB8

NC

VSS

 

A1

VSS

DQA2

NC

P

NC

DQPB9

VSS

 

A0

VSS

NC

DQA1

R

NC

A2

 

 

VDD

 

 

 

 

A13

 

 

 

LBO

 

FT

PE

T

NC

A10

A11

NC

A12

A19

 

ZZ

U

VDDQ

TMS

TDI

TCK

TDO

NC

VDDQ

Rev: 2.18a 12/2002

7/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GS8162Z18/36 119-Bump and 165-Bump BGA Pin Description

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Type

 

 

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A0, A1

 

 

 

I

 

 

 

Address field LSBs and Address Counter Preset Inputs

 

 

 

 

 

 

 

An

 

 

 

I

 

 

 

Address Inputs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQA1–DQA9

 

 

 

 

 

 

 

 

 

 

 

DQB1–DQB9

 

I/O

 

 

 

Data Input and Output pins

 

 

 

DQC1–DQC0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DQD1–DQD0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A,

 

 

B,

 

C,

 

D

 

 

 

I

 

 

 

Byte Write Enable for DQA, DQB, DQC, DQD I/Os; active low

 

 

 

B

B

B

B

 

 

 

 

 

 

 

 

 

 

 

NC

 

 

 

 

No Connect

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CK

 

 

 

I

 

 

 

Clock Input Signal; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Clock Enable; active low

 

 

 

 

 

 

CKE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Parity Bit Enable; active low (High = x16/32 Mode, Low = x18/36 Mode)

 

 

 

 

 

 

 

PE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Write Enable; active low

 

 

 

 

 

 

 

 

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

I

 

 

 

Chip Enable; active low

 

 

 

 

 

 

 

 

E

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

I

 

 

 

Chip Enable; active low

 

 

 

 

 

 

 

 

E

 

 

 

 

 

 

 

 

 

 

 

 

E2

 

 

 

I

 

 

 

Chip Enable; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Output Enable; active low

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

ADV

 

 

 

I

 

 

 

Burst address counter advance enable; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ZZ

 

 

 

I

 

 

 

Sleep mode control; active high

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Flow Through or Pipeline mode; active low

 

 

 

 

 

 

 

 

FT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

Linear Burst Order mode; active low

 

 

 

 

 

 

LBO

 

 

 

 

 

 

 

 

 

 

 

ZQ

 

 

 

I

 

 

 

FLXDrive Output Impedance Control (Low = Low Impedance [High Drive], High = High Impedance [Low

 

 

 

 

 

 

 

 

 

 

 

 

 

Drive])

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TMS

 

 

 

I

 

 

 

Scan Test Mode Select

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDI

 

 

 

I

 

 

 

Scan Test Data In

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TDO

 

 

O

 

 

 

Scan Test Data Out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TCK

 

 

 

I

 

 

 

Scan Test Clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDD

 

 

 

I

 

 

 

Core power supply

 

 

 

 

 

 

VSS

 

 

 

I

 

 

 

I/O and Core Ground

 

 

 

 

 

VDDQ

 

 

 

I

 

 

 

Output driver power supply

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BPR1999.05.18

Rev: 2.18a 12/2002

8/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

Functional Details

Clocking

Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation.

Pipeline Mode Read and Write Operations

All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable inputs will deactivate the device.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Function

 

W

 

 

BA

 

BB

 

BC

 

BD

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read

 

H

 

 

X

 

X

 

X

 

X

 

 

 

 

 

 

 

 

 

 

 

 

Write Byte “a”

 

L

 

 

L

 

H

 

H

 

H

 

 

 

 

 

 

 

 

 

 

 

 

Write Byte “b”

 

L

 

 

H

 

L

 

H

 

H

 

 

 

 

 

 

 

 

 

 

 

 

Write Byte “c”

 

L

 

 

H

 

H

 

L

 

H

 

 

 

 

 

 

 

 

 

 

 

 

Write Byte “d”

 

L

 

 

H

 

H

 

H

 

L

 

 

 

 

 

 

 

 

 

 

 

 

Write all Bytes

 

L

 

 

L

 

L

 

L

 

L

 

 

 

 

 

 

 

 

 

 

 

 

Write Abort/NOP

 

L

 

 

H

 

H

 

H

 

H

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three chip enables (E1, E2, and E3) are active, the write enable input signals W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched into the address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the output pins.

Write operation occurs when the RAM is selected, CKE is active, and the Write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock.

Flow Through Mode Read and Write Operations

Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a Read Cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode.

Write operations are initiated in the same way, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock.

Rev: 2.18a 12/2002

9/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

Synchronous Truth Table

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operation

Type

Address

 

E1

E2

 

E3

ZZ

ADV

 

W

 

Bx

 

G

 

 

CKE

CK

DQ

Notes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselect Cycle, Power Down

D

None

 

H

X

 

X

L

L

 

X

 

X

 

X

 

 

L

L-H

High-Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselect Cycle, Power Down

D

None

 

X

X

 

H

L

L

 

X

 

X

 

X

 

 

L

L-H

High-Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselect Cycle, Power Down

D

None

 

X

L

 

X

L

L

 

X

 

X

 

X

 

 

L

L-H

High-Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Deselect Cycle, Continue

D

None

 

X

X

 

X

L

H

 

X

 

X

 

X

 

 

L

L-H

High-Z

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Begin Burst

R

External

 

L

H

 

L

L

L

 

H

 

X

 

L

 

 

L

L-H

Q

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Read Cycle, Continue Burst

B

Next

 

X

X

 

X

L

H

 

X

 

X

 

L

 

 

L

L-H

Q

1,10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP/Read, Begin Burst

R

External

 

L

H

 

L

L

L

 

H

 

X

 

H

 

 

L

L-H

High-Z

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Dummy Read, Continue Burst

B

Next

 

X

X

 

X

L

H

 

X

 

X

 

H

 

 

L

L-H

High-Z

1,2,10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Begin Burst

W

External

 

L

H

 

L

L

L

 

L

 

L

 

X

 

 

L

L-H

D

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Cycle, Continue Burst

B

Next

 

X

X

 

X

L

H

 

X

 

L

 

X

 

 

L

L-H

D

1,3,10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOP/Write Abort, Begin Burst

W

None

 

L

H

 

L

L

L

 

L

 

H

 

X

 

 

L

L-H

High-Z

2,3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Write Abort, Continue Burst

B

Next

 

X

X

 

X

L

H

 

X

 

H

 

X

 

 

L

L-H

High-Z

1,2,3,10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock Edge Ignore, Stall

 

Current

 

X

X

 

X

L

X

 

X

 

X

 

X

 

 

H

L-H

-

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Sleep Mode

 

None

 

X

X

 

X

H

X

 

X

 

X

 

X

 

 

X

X

High-Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes:

1.Continue Burst cycles, whether Read or Write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first.

2.Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active, so no write operation is performed.

3.G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles.

4.If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z.

5.X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low

6.All inputs, except G and ZZ must meet setup and hold times of rising clock edge.

7.Wait states can be inserted by setting CKE high.

8.This device contains circuitry that ensures all outputs are in High Z during power-up.

9.A 2-bit burst counter is incorporated.

10.The address counter is incriminated for all Burst continue cycles.

Rev: 2.18a 12/2002

10/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GSI GS8162Z72C-133I, GS8162Z72C-133, GS8162Z36D-250I, GS8162Z36D-250, GS8162Z36D-225I Datasheet

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

Pipelined and Flow Through Read Write Control State Diagram

 

 

D

B

 

 

 

Deselect

W

 

 

 

R

 

 

 

 

 

 

 

D

D

 

 

New Read

W

 

New Write

 

 

R

 

R

 

 

W

 

 

 

 

 

B

 

 

B

 

 

 

 

 

R

W

R

W

 

 

 

 

 

Burst Read

 

 

Burst Write

 

B

 

 

B

 

D

 

 

D

Key

Input Command Code

 

Notes

 

 

 

 

 

 

ƒ Transition

 

 

 

 

 

 

 

 

 

 

Current State (n)

Next State (n+1)

 

 

 

 

 

 

 

n

n+1

 

 

 

 

 

 

 

 

 

 

 

 

 

Clock (CK)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Command

 

 

 

 

ƒ

 

 

ƒ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current State

 

Next State

1.The Hold command (CKE Low) is not

shown because it prevents any state change.

2.W, R, B, and D represent input command

codes as indicated in the Synchronous Truth Table.

n+2 n+3

ƒ ƒ

Current State and Next State Definition for Pipelined and Flow through Read/Write Control State Diagram

Rev: 2.18a 12/2002

11/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8162Z18(B/D)/GS8162Z36(B/D)/GS8162Z72(C)

Pipeline Mode Data I/O State Diagram

Intermediate

 

Intermediate

 

 

R

Intermediate

B W

R

 

 

B

 

 

 

 

 

 

High Z

 

 

 

 

Data Out

 

 

W

 

(Data In)

 

 

 

(Q Valid)

D

 

Intermediate

Intermediate

 

D

 

W R

High Z

B

D

Intermediate

Key

Input Command Code

Notes

 

1.

The Hold command

 

Low) is not

 

 

 

(CKE

 

ƒ Transition

 

 

shown because it prevents any state change.

 

Transition

2.

W, R, B, and D represent input command

 

 

 

Current State (n) Intermediate State (N+1)

Next State (n+2)

codes as indicated in the Truth Tables.

 

 

 

n

n+1

n+2

n+3

Clock (CK)

Command

 

 

 

 

ƒ

 

 

 

ƒ

 

 

 

ƒ

 

 

 

ƒ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current State

 

Intermediate

 

Next State

 

 

 

 

 

 

 

 

 

 

 

State

 

 

 

 

 

 

 

 

Current State and Next State Definition for Pipeline Mode Data I/O State Diagram

Rev: 2.18a 12/2002

12/38

© 1999, Giga Semiconductor, Inc.

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

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