GSI GS74108TP-15, GS74108TP-12I, GS74108TP-12, GS74108TP-10I, GS74108TP-10 Datasheet

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Rev: 1.06 7/2000 1/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
512K x 8
4Mb Asynchronous SRAM
8, 10, 12, 15ns
3.3V VDD
Center VDD & VSS
Commercial Temp
Industrial Temp
Features
Fast access time: 8, 10, 12, 15ns
CMOS low power operation: 150/125/110/90 mA at min. cycle time.
Single 3.3V ± 0.3V power supply
All inputs and outputs are TTL compatible
Fully static operation
Industrial Temperature Option: -40° to 85°C
Package line up
J: 400mil, 36 pin SOJ package
TP: 400mil, 44 pin TSOP Type II package
Description
The GS74108 is a high speed CMOS static RAM organized as
524,288-words by 8-bits. Static design eliminates the need for exter-
nal clocks or timing strobes. Operating on a single 3.3V power supply
and all inputs and outputs are TTL compatible. The GS74108 is avail-
able in 400 mil SOJ and 400 mil TSOP Type-II packages.
Pin Descriptions
SOJ 512K x 8 Pin Configuration
Symbol Description
A0 to A18
Address input
DQ1 to DQ8 Data input/output
CE Chip enable input
WE Write enable input
OE Output enable input
VDD +3.3V power supply
VSS Ground
NC No connect
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
A4
A3
A2
A1
A0
CE
DQ1
DQ2
VDD
VSS
DQ3
DQ4
WE
A17
A16
A15
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A9
A10
A11
A12
36 pin
400mil SOJ
17
18
A14
A13
20
19 NC
A18
Rev: 1.06 7/2000 2/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
TSOP-II 512K x 8 Pin Configuration
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
A4
A3
A2
A1
A0
CE
DQ1
DQ2
VDD
VSS
DQ3
DQ4
WE
NC
A5
A6
A7
A8
OE
DQ8
DQ7
VSS
VDD
DQ6
DQ5
A10
A11
A12
A18
44 pin
400mil TSOP II
19
20
26
25
NC
21
22
NC
NC
24
23
NC
NC
1
2
NC
NC
44
43
NC
NC
A9
A13
A17
A16
A15
A14
Memory Array
Row
Decoder
Column
Decoder
Address
Input
Buffer
Control
I/O Buffer
A0
CE
WE
OE
DQ1
A18
Block Diagram
DQ8
Rev: 1.06 7/2000 3/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Note: X: “H” or “L”
Note:
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation shall be restricted to Recommended
Operating Conditions. Exposure to higher than recommended voltages for extended periods of time could affect device reliability.
Truth Table
CE OE WE DQ1 to DQ8 VDD Current
H X X Not Selected ISB1, ISB2
L L H Read
IDDL X L Write
L H H High Z
Absolute Maximum Ratings
Parameter Symbol Rating Unit
Supply Voltage VDD -0.5 to +4.6 V
Input Voltage VIN
-0.5 to VDD+0.5
(4.6V max.)
V
Output Voltage VOUT
-0.5 to VDD+0.5
(4.6V max.)
V
Allowable power dissipation PD 0.7 W
Storage temperature TSTG -55 to 150
o
C
Rev: 1.06 7/2000 4/12 © 1999, Giga Semiconductor, Inc.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS74108TP/J
Note:
1. Input overshoot voltage should be less than VDD+2V and not exceed 20ns.
2. Input undershoot voltage should be greater than -2V and not exceed 20ns.
Notes:
1. Tested at TA=25°C, f=1MHz
2. These parameters are sampled and are not 100% tested
Recommended Operating Conditions
Parameter Symbol Min Typ Max Unit
Supply Voltage for -10/12/15 VDD 3.0 3.3 3.6 V
Supply Voltage for -8 VDD 3.135 3.3 3.6 V
Input High Voltage VIH 2.0 - VDD+0.3 V
Input Low Voltage VIL -0.3 - 0.8 V
Ambient Temperature,
Commercial Range
TAc 0 - 70
o
C
Ambient Temperature,
Industrial Range
TAI -40 - 85
o
C
Capacitance
Parameter Symbol Test Condition Max Unit
Input Capacitance CIN VIN=0V 5 pF
Output Capacitance COUT VOUT=0V 7 pF
DC I/O Pin Characteristics
Parameter Symbol Test Conditions Min Max
Input Leakage
Current
IIL VIN = 0 to VDD -1uA 1uA
Output Leakage
Current
ILO
Output High Z
VOUT = 0 to VDD
-1uA 1uA
Output High Voltage VOH IOH = - 4mA 2.4
Output Low Voltage VOL ILO = + 4mA 0.4V
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