General Semiconductor SMAJ530, SMAJ550 Datasheet

SMAJ530 AND SMAJ550
SURFACE MOUNT TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Steady State Power - 1Watt Reverse Voltage - 530, 550 Volts
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Protects TOPSwitch
250°C/10 seconds at terminals
Exellent Clamping capabilityAvailable in unidirectional only
MECHANICAL DATA
Case: JEDEC DO-214AC molded plastic body over
passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: The color band denotes the cathode, which is positive with respect to the anode under normal TVS operation
Mounting Position: Any Weight: 0.002 ounces, 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS SMAJ530 SMAJ550 UNITS
Device marking code HD SB Steady state power dissipation
(NOTE 3)
P
M(AV)
1.0 Watts
Peak pulse power dissipation
(NOTE 1,2,5, FIG.1)
P
PPM
Minimum 300 Watts
Minimum breakdown voltage at 100µAV
(BR)
530 550 Volts
Maximum clamping voltage at 300mA, 10/1000 µs
-
waveform Vc 660 Volts
Stand-off voltage V
WM
477 495 Volts
Maximum DC reverse leakage current at V
WM
I
D
5.0 µA
Typical thermal resistance R
ΘJL
27 °C/W
Typical thermal resistance R
ΘJA
75 °C/W
Typical temperature coefficient of V
(BR)
650 mV°C
Typical capacitance
(NOTE 4)
at 0V
C
J
75
pF
at 200V 45
Operating junction and storage temperature range T
J
, T
STG
-55 to +150 °C
NOTES: (1) Non-repetitive current pulse, per Fig.3 and derated above 25°C per - Fig. 2 (2) Mounted on 5.0mm2copper pads to each terminal (3) Lead temperature at 75°C=TLper Fig. 5 (4) Measured at 1MHz (5) Peak pulse power waveform is 10/100µS
1/4/99
DO-214AC
Dimensions in inches and (millimeters)
ADVANCED INFORMATION
0.065 (1.65)
0.049 (1.25)
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.008 (0.203)
0.208 (5.28)
0.194 (4.93)
MAX.
0.110 (2.79)
0.100 (2.54)
0.012 (0.305)
0.006 (0.152)
MAXIMUM RATINGS AND CHARACTERISTIC CURVES SMAJ530 AND SMAJ550
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
, PEAK PULSE POWER, kW
td, PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE, °C
FIG. 3 - PULSE WAVEFORM
t, TIME, ms
I
PPM,
PEAK PULSE CURRENT, %
PEAK PULSE POWER (Ppp) or CURRENT (
IPPM
)
DERATING IN PERCENTAGE, %
NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG. 3 TA=25°C
PULSE WIDTH (td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% of I
PPM
tr=10µsec.
td
PEAK VALUE I
PPM
HALF VALUE - I
PPM
2
10/1000µsec. WAVEFORM as DEFINED by R.E.A.
FIG. 2 - PULSE DERATING CURVE
RECOMMENDED PAD LAYOUT
The pad dimensions should be 0.010” (2.5mm) longer than the contact size in the lead axis. This allows a solder fillet to form, see figure below. Contact factory for soldering methods.
MODIFIED J-BEND
(
)
Dimensions in inches and (millimeters
)
Respect Thermal Resistance (PCB Layout) - as the temperature coefficient also contributes to the clamping voltage.
Select minimum breakdown voltage, so you get acceptable power dissipation and PCB tie point temperature. Devices with higher breakdown voltage will have a shorter conduction time and will dissipate less power.
Clamping voltage is influenced by internal resistance - design approximation is 7V per 100mA slope.
Keep temperature of TVS lower than TOPSwitchas a recommendation.
Maximum current is determined by the maximum TJand can be higher than 300mA. Contact supplier for different clamping voltage / current arrangements.
Minimum breakdown voltage can be customized for other applications. Contact supplier.
APPLICATION NOTES
100
10
1.0
0.1
0.1
µ
s
1.0
µ
s
150
100
50
0
0
1.0
10
µ
s
100
µ
s
2.0
1.0ms 10ms
3.0
4.0
10,000
100
1,000
75
50
25
0
25
0
50
75
100
125
150
175
0.060 MIN (1.52 MIN)
0.050 MIN (1.27 MIN)
0.220 REF
5.58
0.094 MAX (2.38 MAX)
Loading...