Fairchild Semiconductor SFH9154 Datasheet
Advanced Power MOSFET
SFH9154
FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
o
■ 150
C Operating Temperature
■ Lower Leakage Current : 10 µA(Max.) @ V
■ Lower R
: 0.140 Ω (Typ.)
DS(ON)
Absolute Maximum Ratings
Characteristic Value UnitsSymbol
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
=25oC)
C
=100oC)
C
Drain Current-Pulsed ①
Gate-to-Source Voltage
Single Pulsed Avalanche Energy ②
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25oC)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8＂ from case for 5-seconds
T
V
DSS
I
I
DM
V
E
I
AR
E
dv/dt
P
, T
J
T
D
GS
AS
AR
D
STG
L
= -150V
DS
①
①
③
BV
DSS
R
DS(on)
ID= -18 A
TO-3P
1
2
3
1.Gate 2. Drain 3. Source
-150
-18
-11.5
-72
±30
1215
-18
20.4
-5.0
204
1.63
- 55 to +150
300
= -150 V
= 0.2 Ω
mJ
mJ
V/ns
W
W/
o
V
A
A
V
A
o
C
C
Thermal Resistance
R
θJC
R
θCS
R
θJA
Characteristic Max. UnitsSymbol Typ.
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
--
0.24
--
0.61
--
40
o
C/W
1
SFH9154
P-CHANNEL
POWER MOSFET
Electrical Characteristics
CharacteristicSymbol
BV
ΔBV/ΔT
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
Q
Drain-Source Breakdown Voltage
DSS
Breakdown Voltage Temp. Coeff.
J
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
fs
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer Capacitance
rss
Turn-On Delay Time
t
Rise Time
r
Turn-Off Delay Time
t
Fall Time
f
Total Gate Charge
g
Gate-Source Charge
gs
Gate-Drain(＂Miller＂) Charge
gd
(TC=25℃ unless otherwise specified)
Max. UnitsTyp.Min. Test Condition
V
-150
--
-2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.16
--
-100
--
--
--
-100
--
0.14 0.2
11
2290
3000
400
200
20
40
80
40
100
20
40
--
--
-4.0
100
-10
--
600
300
45
90
170
90
130
--
--
V
V/℃
V
nA
μA
Ω
pF
ns
nC
=0V,ID=-250μA
GS
I
=-250μA See Fig 7
D
V
=-5V,ID=-250μA
DS
V
=-30V
GS
V
=30V
GS
VDS=-150V
V
=-120V,TC=125℃
DS
=-10V,ID=-9.0A
V
GS
Ω
VDS=-40V,ID=-9.0A
VGS=0V,VDS=-25V,f =1MHz
VDD=-75V,ID=-18A,
R
=6.2Ω
G
VDS=-120V,VGS=-10V,
I
=-18A
D
See Fig 6 & Fig 12
See Fig 5
See Fig 13
④
④
④⑤
④⑤
Source-Drain Diode Ratings and Characteristics
CharacteristicSymbol Max. UnitsTyp.Min. Test Condition
I
I
SM
V
t
Q
Notes ;
① Repetitive Rating : Pulse Wi dth Lim i ted by Maximum Junction Temperature
② L=5mH, I
③ I
④ Pulse Test : Pulse Width = 250μs, Duty Cycl e ≤ 2%
⑤ Essentially Independent of Operating Temperature
Continuous Source Current
S
Pulsed-Source Current ①
Diode Forward Voltage
SD
Reverse Recovery Time
rr
Reverse Recovery Charge
rr
=-18A, VDD=-50V, RG=27Ω, Starting TJ =25℃
AS
≤-18A, di/dt≤450A/μs, VDD≤BV
SD
④
, Starting TJ =25℃
DSS
--
--
--
--
-200
--
1.5
--
-72
-5.0
--
--
A
V
ns
μC
-18
--
Integral reverse pn-diode
in the MOSFET
T
=25℃,IS=-18A,VGS=0V
J
T
=25℃,IF=-18A
J
di
/dt=100A/μs
F
④
2
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