Fairchild Semiconductor MMBFJ210, MMBFJ212, MMBFJ211, J211, J212 Datasheet

0 (0)

J210

J211

J212

G

TO-92

 

S D

MMBFJ210

MMBFJ211

MMBFJ212

G

 

S

SOT-23

D NOTE: Source & Drain

Mark: 62V / 62W / 62X

are interchangeable

N-Channel RF Amplifier

This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

VDG

Drain-Gate Voltage

25

V

VGS

Gate-Source Voltage

- 25

V

IGF

Forward Gate Current

10

mA

TJ ,Tstg

Operating and Storage Junction Temperature Range

-55 to +150

° C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

 

J210-212

*MMBFJ210-212

 

PD

Total Device Dissipation

350

225

mW

 

Derate above 25° C

2.8

1.8

mW/° C

Rθ JC

Thermal Resistance, Junction to Case

125

 

° C/W

 

 

 

 

 

Rθ JA

Thermal Resistance, Junction to Ambient

357

556

° C/W

 

 

 

 

 

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBFJ212 / 1MMBFJ21 / MMBFJ210 / J212 / 1J21 / J210

1997 Fairchild Semiconductor Corporation

J210/J211/J212/MMBFJ210/J211/J212, Rev A

Fairchild Semiconductor MMBFJ210, MMBFJ212, MMBFJ211, J211, J212 Datasheet

N-Channel RF Amplifier

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

 

Min

Max

Units

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

V ( B R ) G S S

Gate-Source Breakdown Voltage

IG = 1.0 μA, V DS = 0

 

 

- 25

 

V

IG S S

Gate Reverse Current

V G S = 15 V, V D S = 0

 

 

 

- 100

pA

V GS(off)

Gate-Source Cutoff Voltage

V D S = 15 V, I D = 1.0 nA

210

-1.0

-3.0

V

 

 

 

 

211

- 2.5

- 4.5

V

 

 

 

 

212

- 4.0

- 6.0

V

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ID S S

Z e r o - G a t e V o l t a g e D r a i n C u r r e n t *

V D S = 1 5 V , V G S = 0

 

2 1 0

2 . 0

1 5

m A

 

 

 

 

2 1 1

7 . 0

2 0

m A

 

 

 

 

2 1 2

1 5

4 0

m A

SMALL SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

gfs

Common Source Forward

VD S = 15 V, V G S = 0,

f = 1.0 kHz

 

 

 

 

Transconductance

 

 

210

4000

12,000

μmhos

 

 

 

 

211

6000

12,000

μmhos

 

 

 

 

212

7000

12,000

μmhos

go s s

Common Source Output

VD S = 15 V, V G S = 0,

f = 1.0 kHz

 

200

μmhos

 

Conductance

 

 

 

 

 

 

*Pulse Test: Pulse Width 300 μS

 

 

 

 

 

 

Typical Characteristics

Parameter Interactions

Common Drain-Source

MMBFJ212 / MMBFJ211 / MMBFJ210 / J212 / J211 / J210

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