Fairchild Semiconductor MMBFJ175, MMBFJ176, MMBFJ177, J177, J175 Datasheet

									MMBFJ175
						J174
						J175			MMBFJ176
						J176			MMBFJ177
						J177

G

D

S G	TO-92	SOT-23	S
	D	Mark: 6W / 6X / 6Y

P-Channel Switch

This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.

Absolute Maximum Ratings*		TA = 25°C unless otherwise noted
Symbol	Parameter			Value	Units
VDG	Drain-Gate Voltage			- 30	V
VGS	Gate-Source Voltage			30	V
IGF	Forward Gate Current			50	mA
TJ ,Tstg	Operating and Storage Junction Temperature Range			-55 to +150	° C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics		TA = 25°C unless otherwise noted
Symbol	Characteristic			Max		Units
			J174 - J177		*MMBFJ175
PD	Total Device Dissipation		350		225	mW
	Derate above 25° C		2.8		1.8	mW/° C
Rθ JC	Thermal Resistance, Junction to Case		125			° C/W
Rθ JA	Thermal Resistance, Junction to Ambient		357		556	° C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

MMBFJ177 / MMBFJ176 / MMBFJ175 / J177 / J176 / J175 / J174

1997 Fairchild Semiconductor Corporation

J174-177, Rev. A

P-Channel Switch

(continued)

Electrical Characteristics		TA = 25°C unless otherwise noted
Symbol	Parameter		Test Conditions		Min	Max	Units
OFF CHARACTERISTICS
B(BR)GSS	Gate-Source Breakdown Voltage		IG = 1.0 µ A, VDS = 0		30		V
IGSS	Gate Reverse Current		VGS = 20 V, VDS = 0			1.0	nA
VGS(off)	Gate-Source Cutoff Voltage		VDS = - 15 V, ID = - 10 nA	J174	5.0	10	V
				J175	3.0	6.0	V
				J176	1.0	4.0	V
				J177	0.8	2.5	V
ON CHARACTERISTICS
IDSS	Zero-Gate Voltage Drain Current*		VDS = - 15 V, IGS = 0	J174	- 20	- 100	mA
				J175	- 7.0	- 60	mA
				J176	- 2.0	- 25	mA
				J177	- 1.5	- 20	mA
rDS(on)	Drain-Source On Resistance		VDS ≤ 0.1 V, VGS = 0	J174		85	Ω
				J175		125	Ω
				J176		250	Ω
				J177		300	Ω

*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%

Typical Characteristics

Common Drain-Source

	-20
(mA)		T A= 25°C
	TYP	V GS(off) = 4.5 V
	-16				0.5 V
CURRENT	V GS = 0 V
	-12				1.0 V
					1.5 V
- DRAIN	-8
					2.0 V
	-4				3.0 V	3.5 V
D				2.5 V
I
	0	-1	-2	-3	-4	-5
	0

VDS - DRAIN-SOURCE VOLTAGE (V)

Parameter Interactions

	-TRANSCONDUCTANCE (mmhos)	100			1,000	r
						DS
		50	I DSS		500	RESISTANCE"ON" DRAIN -
			r DS	g fs
		10			100
		5			50
			I DSS , g fs	@ VDS = 15V,
			V GS = 0 PULSED
			r DS @ -100 mV, VGS = 0
			V GS(off) @ V DS = - 15V,
	fs	1	I D = - 1.0	A	10	Ω(
	g					)
		1	2	5	10

VGS (OFF) - GATE CUTOFF VOLTAGE (V)

MMBFJ177 / MMBFJ176 / MMBFJ175 / J177 / J176 / J175 / J174