|
|
|
|
|
|
|
|
|
MMBFJ175 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
J174 |
|||
|
|
|
|
|
|
J175 |
MMBFJ176 |
||
|
|
|
|
|
|
J176 |
MMBFJ177 |
||
|
|
|
|
|
|
J177 |
|
G
D
S G |
TO-92 |
SOT-23 |
S |
|
D |
Mark: 6W / 6X / 6Y |
|
|
|
|
P-Channel Switch
This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88.
Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
|
|
||
Symbol |
Parameter |
|
|
Value |
Units |
|
|
|
|
|
|
VDG |
Drain-Gate Voltage |
|
|
- 30 |
V |
VGS |
Gate-Source Voltage |
|
|
30 |
V |
IGF |
Forward Gate Current |
|
|
50 |
mA |
TJ ,Tstg |
Operating and Storage Junction Temperature Range |
|
-55 to +150 |
° C |
|
|
|
|
|
|
|
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics |
TA = 25°C unless otherwise noted |
|
|
|
||
Symbol |
Characteristic |
|
Max |
Units |
||
|
|
|
|
|
|
|
|
|
|
J174 - J177 |
|
*MMBFJ175 |
|
PD |
Total Device Dissipation |
|
350 |
|
225 |
mW |
|
Derate above 25° C |
|
2.8 |
|
1.8 |
mW/° C |
Rθ JC |
Thermal Resistance, Junction to Case |
125 |
|
|
° C/W |
|
|
|
|
|
|
|
|
Rθ JA |
Thermal Resistance, Junction to Ambient |
357 |
|
556 |
° C/W |
|
|
|
|
|
|
|
|
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MMBFJ177 / MMBFJ176 / MMBFJ175 / J177 / J176 / J175 / J174
1997 Fairchild Semiconductor Corporation |
J174-177, Rev. A |
P-Channel Switch
(continued)
Electrical Characteristics |
TA = 25°C unless otherwise noted |
|
|
|
|
||
Symbol |
Parameter |
|
Test Conditions |
|
Min |
Max |
Units |
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
B(BR)GSS |
Gate-Source Breakdown Voltage |
|
IG = 1.0 µ A, VDS = 0 |
|
30 |
|
V |
IGSS |
Gate Reverse Current |
|
VGS = 20 V, VDS = 0 |
|
|
1.0 |
nA |
VGS(off) |
Gate-Source Cutoff Voltage |
|
VDS = - 15 V, ID = - 10 nA |
J174 |
5.0 |
10 |
V |
|
|
|
|
J175 |
3.0 |
6.0 |
V |
|
|
|
|
J176 |
1.0 |
4.0 |
V |
|
|
|
|
J177 |
0.8 |
2.5 |
V |
ON CHARACTERISTICS |
|
|
|
|
|
|
|
IDSS |
Zero-Gate Voltage Drain Current* |
|
VDS = - 15 V, IGS = 0 |
J174 |
- 20 |
- 100 |
mA |
|
|
|
|
J175 |
- 7.0 |
- 60 |
mA |
|
|
|
|
J176 |
- 2.0 |
- 25 |
mA |
|
|
|
|
J177 |
- 1.5 |
- 20 |
mA |
rDS(on) |
Drain-Source On Resistance |
|
VDS ≤ 0.1 V, VGS = 0 |
J174 |
|
85 |
Ω |
|
|
|
|
J175 |
|
125 |
Ω |
|
|
|
|
J176 |
|
250 |
Ω |
|
|
|
|
J177 |
|
300 |
Ω |
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Typical Characteristics
Common Drain-Source
|
-20 |
|
|
|
|
|
(mA) |
|
T A= 25°C |
|
|
|
|
TYP |
V GS(off) = 4.5 V |
|
|
|
||
-16 |
|
|
|
0.5 V |
|
|
CURRENT |
V GS = 0 V |
|
|
|
|
|
-12 |
|
|
|
1.0 V |
|
|
|
|
|
|
1.5 V |
|
|
- DRAIN |
-8 |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
2.0 V |
|
|
-4 |
|
|
|
3.0 V |
3.5 V |
|
D |
|
|
2.5 V |
|||
|
|
|
|
|||
I |
|
|
|
|
|
|
|
0 |
-1 |
-2 |
-3 |
-4 |
-5 |
|
0 |
VDS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
-TRANSCONDUCTANCE (mmhos) |
100 |
|
|
1,000 |
r |
|
|
|
DS |
||||
50 |
I DSS |
500 |
RESISTANCE"ON" DRAIN - |
|||
|
|
|||||
|
r DS |
g fs |
|
|||
|
|
|
||||
10 |
|
|
100 |
|||
5 |
|
|
50 |
|||
|
I DSS , g fs |
@ VDS = 15V, |
|
|||
|
V GS = 0 PULSED |
|
||||
|
r DS @ -100 mV, VGS = 0 |
|
||||
|
V GS(off) @ V DS = - 15V, |
|
||||
fs |
1 |
I D = - 1.0 |
A |
10 |
Ω( |
|
g |
|
|
) |
|||
1 |
2 |
5 |
10 |
|||
|
|
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
MMBFJ177 / MMBFJ176 / MMBFJ175 / J177 / J176 / J175 / J174