4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
|
H11AA814 SERIES |
H11A617 SERIES |
H11A817 SERIES |
|
|
|
|
|
|
|
|
|
|
|
|
PACKAGE |
|
|
H11AA814 SCHEMATIC |
|
|
|
|
|
1 |
4 COLLECTOR |
4 |
3 EMITTER |
2 |
1
DESCRIPTION
The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.
The H11A617 and H11A817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.
FEATURES
•Compact 4-pin package
•Current transfer ratio in selected groups:
H11AA814: |
20-300% |
H11A817: |
50-600% |
H11AA814A: |
50-150% |
H11A817A: |
80-160% |
H11A617A: |
40%-80% |
H11A817B: |
130-260% |
H11A617B: |
63%-125% |
H11A817C: |
200-400% |
H11A617C: |
100%-200% |
H11A817D: |
300-600% |
H11A617D: |
160%-320% |
|
|
• Minimum BVCEO of 70V guaranteed
APPLICATIONS
H11AA814 Series
•AC line monitor
•Unknown polarity DC sensor
•Telephone line interface
H11A617 and H11A817 Series
•Power supply regulators
•Digital logic inputs
•Microprocessor inputs
H11A617 & H11A817 SCHEMATIC
|
ANODE |
1 |
|
|
4 |
COLLECTOR |
|
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
CATHODE |
|
|
3 |
EMITTER |
|
||
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
© 2003 Fairchild Semiconductor Corporation |
Page 1 of 9 |
4/24/03 |
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 SERIES |
H11A617 |
SERIES |
H11A817 |
SERIES |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Parameter |
|
Symbol |
|
Device |
Value |
Units |
|
|
|
|
|
|
|
|
|
TOTAL DEVICE |
|
|
|
|
|
|
|
Storage Temperature |
|
TSTG |
|
All |
-55 to +150 |
°C |
|
Operating Temperature |
|
TOPR |
|
All |
-55 to +100 |
°C |
|
Lead Solder Temperature |
|
TSOL |
|
All |
260 for 10 sec |
°C |
|
Total Device Power Dissipation (-55°C to 50 °C) |
|
PD |
|
All |
200 |
mW |
|
EMITTER |
|
|
|
|
|
|
|
Continuous Forward Current |
|
IF |
|
All |
50 |
mA |
|
Reverse Voltage |
|
VR |
|
H11A617A/B/C/D |
6 |
V |
|
|
|
H11A817/A/B/C/D |
5 |
|
|||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
Forward Current - Peak (1 µs pulse, 300 pps) |
|
IF(pk) |
|
All |
1.0 |
A |
|
LED Power Dissipation (25°C ambient) |
|
PD |
|
All |
100 |
mW |
|
Derate above 25°C |
|
|
1.33 |
mW/°C |
|
||
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
DETECTOR |
|
|
|
|
|
|
|
Collector-Emitter Voltage |
|
VCEO |
|
All |
70 |
V |
|
|
|
VECO |
|
H11AA814/A |
6 |
|
|
Emitter-Collector Voltage |
|
|
H11A617A/B/C/D |
7 |
V |
|
|
|
|
|
|
H11A817/A/B/C/D |
6 |
|
|
|
|
|
|
|
|
|
|
Continuous Collector Current |
|
IC |
|
All |
50 |
mA |
|
Detector Power Dissipation (25°C ambient) |
|
PD |
|
All |
150 |
mW |
|
Derate above 25°C |
|
|
2.0 |
mW/°C |
|
||
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)
|
INDIVIDUAL COMPONENT CHARACTERISTICS |
|
|
|
|
|
|
|||
|
Parameter |
Test Conditions |
Symbol |
|
Device |
Min |
Typ* |
Max |
Unit |
|
|
|
|
|
|
|
|
|
|
|
|
|
EMITTER |
(IF = 60 mA) |
|
|
H11A617A/B/C/D |
|
1.35 |
1.65 |
|
|
|
Input Forward Voltage |
(IF = 20 mA) |
VF |
|
H11A817/A/B/C/D |
|
1.2 |
1.5 |
V |
|
|
(IF = ±20 mA) |
|
|
H11AA814/A |
|
1.2 |
1.5 |
|
|
|
|
|
|
|
|
|
|
||||
|
Reverse Leakage Current |
(VR = 6.0 V) |
IR |
|
H11A617A/B/C/D |
|
.001 |
10 |
µA |
|
|
(VR = 5.0 V) |
|
H11A817/A/B/C/D |
|
||||||
|
|
|
|
|
|
|
|
|
||
|
DETECTOR |
|
|
|
|
|
|
|
|
|
|
Collector-Emitter Breakdown |
(IC = 1.0 mA, IF = 0) |
BVCEO |
|
ALL |
70 |
100 |
|
V |
|
|
Voltage |
|
|
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Emitter-Collector Breakdown |
|
|
|
H11AA814/A |
6 |
|
|
|
|
|
(IE = 100 µA, IF = 0) |
BVECO |
|
|
|
|
|
|
|
|
|
|
H11A617A/B/C/D |
7 |
10 |
|
V |
||||
|
Voltage |
|
|
|||||||
|
|
|
|
H11A817/A/B/C/D |
6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11AA814/A, H11A817/A/B/C/D, |
|
|
100 |
|
|
|
|
Collector-Emitter Dark Current |
(VCE = 10V, IF = 0) |
ICEO |
|
H11A617C/D |
|
1 |
nA |
||
|
|
|
|
|||||||
|
|
|
|
|
H11A617A/B |
|
|
50 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector-Emitter Capacitance |
(VCE = 0 V, f = 1 MHz) |
CCE |
|
ALL |
|
8 |
|
pF |
|
|
*Typical values at TA = 25°C. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
© 2003 Fairchild Semiconductor Corporation |
Page 2 of 9 |
|
|
|
4/24/03 |
|
||||
4-PIN PHOTOTRANSISTOR OPTOCOUPLERS
H11AA814 |
SERIES |
|
H11A617 |
|
SERIES |
|
H11A817 |
SERIES |
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
TRANSFER CHARACTERISTICS (TA = 25°C Unless otherwise specified.) |
|
|
|
|
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
DC Characteristic |
|
|
Test Conditions |
|
Symbol |
|
|
Device |
|
Min |
Typ* |
Max |
Unit |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(IF = ±1 mA, VCE = 5 V) (note 1) |
|
|
|
|
H11AA814 |
|
20 |
|
|
300 |
% |
|
||||
|
|
(IF = ±1 mA, VCE = 5 V) (note 1) |
|
|
|
|
H11AA814A |
|
50 |
|
|
150 |
% |
|
||||
|
|
|
|
|
|
|
|
|
H11A617A |
|
40 |
|
|
80 |
% |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(IF = 10 mA, VCE = 5 V) (note 1) |
|
|
|
|
H11A617B |
|
63 |
|
|
125 |
% |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
H11A617C |
|
100 |
|
|
200 |
% |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A617D |
|
160 |
|
|
320 |
% |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Current Transfer |
|
|
|
|
|
|
|
|
H11A817 |
|
50 |
|
|
600 |
% |
|
||
|
|
|
|
|
CTR |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A817A |
|
80 |
|
|
160 |
% |
|
||||
Ratio |
|
|
|
|
|
|
|
|
|
|
|
|||||||
|
(IF = 5 mA, VCE = 5 V) (note 1) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
H11A817B |
|
130 |
|
|
260 |
% |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A817C |
|
200 |
|
|
400 |
% |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A817D |
|
300 |
|
|
600 |
% |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A617A |
|
13 |
|
|
|
|
% |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(IF = 1 mA, VCE = 5 V) (note 1) |
|
|
|
|
H11A617B |
|
22 |
|
|
|
|
% |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
H11A617C |
|
34 |
|
|
|
|
% |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11A617D |
|
56 |
|
|
|
|
% |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Collector-Emitter |
|
(IC = 1 mA, IF = ±20 mA) |
|
|
|
|
H11AA814/A |
|
|
|
|
0.2 |
|
|
||||
|
(IC = 2.5 mA, IF = 10 mA) |
VCE (SAT) |
|
H11A617A/B/C/D |
|
|
|
0.4 |
V |
|
||||||||
Saturation Voltage |
|
|
|
|
|
|
||||||||||||
|
(IC |
= 1 mA, IF = 20 mA) |
|
|
|
H11A817/A/B/C/D |
|
|
|
0.2 |
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|||||||||
AC Characteristic |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rise Time |
|
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) |
|
tr |
|
|
ALL |
|
|
|
2.4 |
18 |
µs |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time |
|
(IC = 2 mA, VCE = 2 V, RL = 100V) (note 2) |
|
tf |
|
|
ALL |
|
|
|
2.4 |
18 |
µs |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
ISOLATION CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Characteristic |
|
Test Conditions |
|
Symbol |
|
Min |
|
Typ* |
|
Max |
|
Units |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Input-Output Isolation Voltage (note 3) |
f = 60Hz, t = 1 min |
|
VISO |
|
5300 |
|
|
|
|
|
|
Vac(rms) |
|
|||||
Isolation Resistance |
|
(VI-O = 500 VDC) |
|
RISO |
|
1011 |
|
|
|
|
|
|
|
Ω |
|
|||
Isolation Capacitance |
|
(VI-O = 0, f = 1 MHz) |
|
CISO |
|
|
|
0.5 |
|
|
|
|
pf |
|
||||
*Typical values at TA = 25°C. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
NOTES
1.Current Transfer Ratio (CTR) = IC/IF x 100%.
2.For test circuit setup and waveforms, refer to Figure 8.
3.For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common.
© 2003 Fairchild Semiconductor Corporation |
Page 3 of 9 |
4/24/03 |
Loading...