Fairchild Semiconductor H11A2, H11A1-M, H11A1, H11A5, H11A4 Datasheet

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

2

1

3NC

5

6

4

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5

WHITE PACKAGE (-M SUFFIX)

BLACK PACKAGE (NO -M SUFFIX)

DESCRIPTION

SCHEMATIC

6

6

6

6

6

1

1

1

6

1

1

1

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.

FEATURES

• Also available in white package by specifying -M suffix, eg. 4N25-M

• UL recognized (File # E90700)

• VDE recognized (File # 94766)

- Add option V for white package (e.g., 4N25V-M)

- Add option 300 for black package (e.g., 4N25.300)

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

© 2003 Fairchild Semiconductor Corporation

Page 1 of 15

5/7/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5

(T

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units

TOTAL DEVICE

Storage Temperature

Operating Temperature

Wave solder temperature (see page 14 for reflow solder profiles)

Total Device Power Dissipation @ T
Derate above 25°C

EMITTER

DC/Average Forward Input Current

Reverse Input Voltage

Forward Current - Peak (300µs, 2% Duty Cycle)

LED Power Dissipation @ T

= 25°C

A

Derate above 25°C

DETECTOR

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Collector Voltage

Detector Power Dissipation @ T
Derate above 25°C

A

= 25°C

A

= 25°C

= 25°C unless otherwise specified)

A

T

STG

T

OPR

T

SOL

P

D

I

F

V

R

I

(pk)

F

P

D

V

CEO

V

CBO

V

ECO

P

D

-55 to +150 °C

-55 to +100 °C

260 for 10 sec °C

250

3.3 (non-M), 2.94 (-M)

100 (non-M), 60 (-M) mA

6V

3A

150 (non-M), 120 (-M) mW

2.0 (non-M), 1.41 (-M) mW/°C

30 V

70 V

7V

150 mW

2.0 (non-M), 1.76 (-M) mW/°C

mW

© 2003 Fairchild Semiconductor Corporation

Page 2 of 15

5/7/03

Ω

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5

(T

ELECTRICAL CHARACTERISTICS

INDIVIDUAL COMPONENT CHARACTERISTICS

Parameter Test Conditions Symbol Min Typ* Max Unit

EMITTER

Input Forward Voltage (I

Reverse Leakage Current (V

DETECTOR

Collector-Emitter Breakdown Voltage (I

Collector-Base Breakdown Voltage (I

Emitter-Collector Breakdown Voltage (I

Collector-Emitter Dark Current (V

Collector-Base Dark Current (V

Capacitance (V

CE

= 25°C unless otherwise specified)

A

= 10 mA) V

F

= 6.0 V) I

R

= 1.0 mA, I

C

= 100 µA, I

C

= 100 µA, I

E

= 10 V, I

CE

= 0) BV

F

= 0) BV

F

= 0) BV

F

= 0) I

F

= 10 V) I

CB

= 0 V, f = 1 MHz) C

F

R

CEO

CBO

ECO

CEO

CBO

CE

1.18 1.50 V

0.001 10 µA

30 100 V

70 120 V

710 V

1 50 nA

20 nA

8pF

ISOLATION CHARACTERISTICS

Characteristic Test Conditions Symbol Min Typ* Max Units

Input-Output Isolation Voltage

(Non ‘-M’, Black Package) (f = 60 Hz, t = 1 min)

(‘-M’, White Package) (f = 60 Hz, t = 1 sec) 7500 Vac(pk)

Isolation Resistance (V

Isolation Capacitance

(V

(‘-M’ White Package) 0.2 2 pF

Note
* Typical values at T

= 25°C

A

= 500 VDC) R

I-O

= &, f = 1 MHz)

I-O

V

ISO

ISO

C

ISO

5300 Vac(rms)

11

10

0.5 pF

© 2003 Fairchild Semiconductor Corporation

Page 3 of 15

5/7/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5

(T

TRANSFER CHARACTERISTICS

DC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

(I

= 10 mA, V

F

Current Transfer Ratio,
Collector to Emitter

(I

= 10 mA, V

Collector-Emitter
Saturation Voltage

AC Characteristic

Non-Saturated
Turn-on Time

Non Saturated
Turn-on Time

F

(I

= 10 mA, V

F

(I

(I

(I

= 10 mA, V

F

(I

= 2 mA, V

C

CE

CE

= 2 mA, I

C

= 0.5 mA, I

C

CC

(Fig.20)

CC

(Fig.20)

= 10 V, T

= 25°C Unless otherwise specified.)

A

= 10 V)

CE

CTR

= 10 V, T

F

= 10 V, R

= 10 V, R

= -55°C)

A

= +100°C)

A

= 50 mA)

= 10 mA)

F

L

= 100 Ω )

L

= 100 Ω )

V

CE (SAT)

T

ON

T

ON

4N35
4N36

100

4N37

H11A1 50

H11A5 30

4N25
4N26

H11A2

20

H11A3

4N27
4N28

10

H11A4

4N35
4N36

40

4N37

4N35
4N36

40

4N37

4N25
4N26
4N27
4N28

4N35
4N36
4N37

H11A1
H11A2
H11A3
H11A4
H11A5

4N25
4N26
4N27

4N28
H11A1
H11A2
H11A3
H11A4
H11A5

4N35

4N36

4N37

%

0.5

0.3
V

0.4

2µs

210µs

© 2003 Fairchild Semiconductor Corporation

Page 4 of 15

5/7/03

GENERAL PURPOSE 6-PIN

PHOTOTRANSISTOR OPTOCOUPLERS

4N25 4N26 4N27 4N28 4N35 4N36
4N37 H11A1 H11A2 H11A3 H11A4 H11A5

TRANSFER CHARACTERISTICS

AC Characteristic Test Conditions Symbol Device Min Typ* Max Unit

= 10 mA, V

(I

F

Turn-off Time

(I

= 2 mA, V

C

* Typical values at T

= 25°C

A

= 10 V, R

CC

(Fig.20)

= 10 V, R

CC

(Fig.20)

(T

= 25°C Unless otherwise specified.) (Continued)

A

4N25
4N26
4N27

= 100 Ω )

L

= 100 Ω )

L

T

OFF

4N28
H11A1
H11A2
H11A3
H11A4
H11A5

4N35

4N36

4N37

2

210

µs

© 2003 Fairchild Semiconductor Corporation

Page 5 of 15

5/7/03