Fairchild Semiconductor GBPC3508, GBPC3510, GBPC3506, GBPC3504, GBPC2510 Datasheet

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Fairchild Semiconductor GBPC3508, GBPC3510, GBPC3506, GBPC3504, GBPC2510 Datasheet

Discrete POWER & Signal

Technologies

GBPC 12, 15, 25, 35 SERIES

Features

Integrally molded heatsink provided very low thermal resistance for maximum heat dissipation.

Surge overload rartings from 300 amperes to 400 amperes.

Isolated voltage from case to lead over 2500 volts.

Suffix "W"

Wire Lead Structure

Suffix "M"

Terminal Location

Face to Face

 

 

1.14(29.0)

 

H OL E FOR #10 SCR EW

1.12(28.5)

 

0.22(5.59)

D IA

 

 

0.692(17.6)

 

 

 

 

 

0.20(5.08)

 

 

0.612(15.5)

 

 

GBPC

1.14(29.0)

0.692(17.6)

+

~

 

 

 

0.602(15.3)

 

0.25(6.35)

1.12(28.5)

0.612(15.5)

~

0.522(13.3)

 

 

 

 

0.442(11.23)

 

 

 

 

 

0.432(10.97)

 

0.96(24.5)

 

 

 

 

 

0.85(21.5)

 

 

 

 

 

 

 

0.752(19.1)

 

 

 

 

 

0.672(17.1)

 

 

 

 

 

1.14(29.0)

 

 

 

H OLE FOR #10 SCREW

1.12(28.5)

 

 

 

 

 

 

 

0.22(5.59)

D IA

0.752(19.1)

 

 

 

0.20(5.08)

 

 

 

 

0.672(17.1)

 

 

 

 

 

 

 

 

 

 

 

GBPC-W

 

 

~

 

1.14(29.0)

 

0.752(19.1)

 

 

 

 

 

 

 

 

0.672(17.1)

 

 

 

1.12(28.5)

 

 

 

 

~

 

 

0.042(1.07)

 

 

+

0.442(11.23)

0.038(0.97)

1.2(30.5)

 

 

0.432(10.97)

 

 

 

 

MI N

 

 

 

 

 

 

 

 

 

 

 

Dimensions are in:

0.490(12.4)

 

 

 

 

0.410(10.4)

 

 

 

 

inches (mm)

 

 

 

 

 

 

12, 15, 25, 35 Ampere Glass Passivated Bridge Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

 

Value

Units

 

 

 

 

 

 

 

IO

Averag e Rectified Curr

en t

GBPC12

12

 

A

 

@T A = 55°C

 

GBPC15

15

 

A

 

 

 

GBPC25

25

 

A

 

 

 

GBPC35

35

 

A

if(surge)

Peak F or ward Surge C urrent

GBPC12, 15, 25

300

 

A

 

8.3 m s single half-

sinewave

 

 

Superimposed on rate d load (JEDEC method GBPC35)

400

 

A

PD

Total D evice Dissipati

on

 

83.3

 

W

 

Derate above 2°5C

 

666

 

m W/°C

RθJL

Ther m al Resistance, J

unction to Lead

 

1.5

 

°C/W

Tstg

Storag e Tem perature

Range

 

-55 to +150

 

°C

TJ

Operati ng Junction Temperature

 

-55 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

SERIES 35 25, 15, 12, GBPC

ã1999 Fairchild Semiconductor Corporation

GBPC 12, 15, 25, 35 SERIES ,vRe.A

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