Fairchild Semiconductor EGP30J, EGP30G, EGP30A, EGP30F, EGP30K Datasheet

Discrete POWER & Signal

Technologies

EGP30A - EGP30K

Features

•Glass passivated cavity-free junction.

•High surge current capability.

•Low leakage current.

•Superfast recovery time for high efficiency.

•Low forward voltage, high current capability.

1.0 min (25.4)

0.375 (9.53)

0.285 (7.24)

0.210 (5.33)

0.190 (4.83)

DO-201AD

COLOR BAND DENOTES CATHODE							0.052	(1.32)
				0.048				(1.22)

Dimensions in inches (mm)

3.0 Ampere Glass Passivated High Efficiency Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol	Parameter	Value	Units
IO	Average Rectified Current	3.0	A
	.375 " lead length @ TA = 55°C
if(surge)	Peak Forward Surge Current	125
	8.3 ms single half-sine-wave		A
	Superimposed on rated load (JEDEC method)
PD	Total Device Dissipation	6.25	W
	Derate above 25°C	50	mW/°C
RqJA	Thermal Resistance, Junction to Ambient	20	°C/W
RqJL	Thermal Resistance, Junction to Lead	8.5	°C/W
Tstg	Storage Temperature Range	-65 to +150	°C
TJ	Operating Junction Temperature	-65 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics			TA = 25°C unless otherwise noted
Parameter								Device									Units
		30A		30B		30C		30D		30F		30G		30J		30K
Peak Repetitive Reverse Voltage		50		100		150		200		300		400		600		800	V
Maximum RMS Voltage		35		70		105		140		210		280		420		560	V
DC Reverse Voltage (Rated VR)		50		100		150		200		300		400		600		800	V
Maximum Reverse Current																	μA
@ rated VR	TA = 25°C								5.0
	TA = 125°C								100								μA
Maximum Reverse Recovery Time							50							75			nS
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Maximum Forward Voltage @ 3.0 A					0.95						1.25			1.7			V
Typical Junction Capacitance					95								75				pF
VR = 4.0 V, f = 1.0 MHz

EGP30K-EGP30A

ã1999 Fairchild Semiconductor Corporation

EGP30A - EGP30K, Rev. A