Fairchild Semiconductor EGP20K, EGP20D, EGP20C, EGP20J, EGP20G Datasheet

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Fairchild Semiconductor EGP20K, EGP20D, EGP20C, EGP20J, EGP20G Datasheet

Discrete POWER & Signal

Technologies

EGP20A - EGP20K

Features

Glass passivated cavity-free junction.

High surge current capability.

Low leakage current.

Superfast recovery time for high efficiency.

Low forward voltage, high current capability.

1.0 min (25.4)

Dimensions in

inches (mm)

0.300 (7.62)

0.230 (5.84)

DO-15

 

 

 

 

 

 

0.140

(3.56)

 

 

 

0.104

(2.64)

COLOR BAND DENOTES CATHODE

 

 

 

 

 

0.034 (0.86)

0.028 (0.71)

2.0 Ampere Glass Passivated High Efficiency Rectifiers

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

IO

Average Rectified Current

2.0

A

 

.375 " lead length @ TA = 55°C

 

 

if(surge)

Peak Forward Surge Current

 

 

 

8.3 ms single half-sine-wave

75

A

 

Superimposed on rated load (JEDEC method)

 

 

PD

Total Device Dissipation

3.13

W

 

Derate above 25°C

25

mW/°C

RqJA

Thermal Resistance, Junction to Ambient

40

°C/W

 

 

 

 

RqJL

Thermal Resistance, Junction to Lead

15

°C/W

 

 

 

 

Tstg

Storage Temperature Range

-65 to +150

°C

 

 

 

 

TJ

Operating Junction Temperature

-65 to +150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

 

 

 

 

 

Parameter

 

 

 

 

 

 

Device

 

 

 

 

 

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20A

 

20B

 

20C

 

20D

 

20F

 

20G

 

20J

 

20K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak Repetitive Reverse Voltage

50

 

100

 

150

 

200

 

300

 

400

 

600

 

800

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

35

 

70

 

105

 

140

 

210

 

280

 

420

 

560

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Reverse Voltage (Rated VR)

50

 

100

 

150

 

200

 

300

 

400

 

600

 

800

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Reverse Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

μA

@ rated VR

TA = 25°C

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

TA = 125°C

 

 

 

 

 

 

 

100

 

 

 

 

 

 

μA

Maximum Reverse Recovery Time

 

 

 

 

 

50

 

 

 

 

 

75

 

nS

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage @ 2.0 A

 

 

 

0.95

 

 

 

 

1.25

 

1.7

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance

 

 

 

70

 

 

 

 

 

 

45

 

 

pF

VR = 4.0 V, f = 1.0 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EGP20K-EGP20A

ã1999 Fairchild Semiconductor Corporation

EGP20A - EGP20K, Rev. A

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