Discrete POWER & Signal
Technologies
EGP20A - EGP20K
Features
•Glass passivated cavity-free junction.
•High surge current capability.
•Low leakage current.
•Superfast recovery time for high efficiency.
•Low forward voltage, high current capability.
1.0 min (25.4)
Dimensions in
inches (mm)
0.300 (7.62)
0.230 (5.84)
DO-15 |
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0.140 |
(3.56) |
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0.104 |
(2.64) |
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COLOR BAND DENOTES CATHODE |
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0.034 (0.86)
0.028 (0.71)
2.0 Ampere Glass Passivated High Efficiency Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
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IO |
Average Rectified Current |
2.0 |
A |
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.375 " lead length @ TA = 55°C |
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if(surge) |
Peak Forward Surge Current |
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8.3 ms single half-sine-wave |
75 |
A |
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Superimposed on rated load (JEDEC method) |
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PD |
Total Device Dissipation |
3.13 |
W |
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Derate above 25°C |
25 |
mW/°C |
RqJA |
Thermal Resistance, Junction to Ambient |
40 |
°C/W |
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RqJL |
Thermal Resistance, Junction to Lead |
15 |
°C/W |
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Tstg |
Storage Temperature Range |
-65 to +150 |
°C |
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TJ |
Operating Junction Temperature |
-65 to +150 |
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Device |
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Units |
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20A |
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20B |
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20C |
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20D |
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20F |
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20G |
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20J |
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20K |
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Peak Repetitive Reverse Voltage |
50 |
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100 |
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150 |
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200 |
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300 |
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400 |
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600 |
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800 |
V |
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Maximum RMS Voltage |
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35 |
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70 |
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105 |
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140 |
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210 |
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280 |
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420 |
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560 |
V |
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DC Reverse Voltage (Rated VR) |
50 |
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100 |
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150 |
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200 |
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300 |
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400 |
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600 |
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800 |
V |
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Maximum Reverse Current |
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μA |
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@ rated VR |
TA = 25°C |
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5.0 |
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TA = 125°C |
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100 |
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μA |
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Maximum Reverse Recovery Time |
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50 |
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75 |
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nS |
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IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A |
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Maximum Forward Voltage @ 2.0 A |
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0.95 |
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1.25 |
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1.7 |
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V |
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Typical Junction Capacitance |
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70 |
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45 |
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pF |
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VR = 4.0 V, f = 1.0 MHz |
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EGP20K-EGP20A
ã1999 Fairchild Semiconductor Corporation |
EGP20A - EGP20K, Rev. A |