Fairchild Semiconductor EGP10K, EGP10F, EGP10D, EGP10J, EGP10G Datasheet

EGP10A - EGP10K

EGP10A-EGP10K

Discrete POWER & Signal

Technologies

Features

• Superfast recovery time for high

efficiency.

• Low forward voltage, high current

capability.

• Low leakage current.

• High surge current capability.

COLOR BAND DENOTES CATHODE

DO-41

1.0 min (25.4)

Dimens i o ns in

inches (mm)

0.205 (5.21)

0.160 (4.06)

0.107 (2.72)

0.080 (2.03)

0.034 (0.86)

0.028 (0.71)

1.0 Ampere Glass Passivated High Efficiency Rectifiers

Absolute Maximum Ratings* T

Symbol Parameter Value Units

I

O

i

f(surge)

P

D

R

θ

JA

T

stg

T

J

Ave rage Rectified Curren t

.375 " lead length @ T

Peak Forward Surge Current

8.3 ms single half-sine-wave
Superimp osed on rated load (JEDEC method)

Total De vice Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient 50
Storage Temperature Range -65 to +150
Operating Junction Temperature -65 to +150

= 25°C unless otherwise noted

A

= 55°C

L

1.0 A

30 A

2.5
17

mW/°C

C/W

°

W

C

°

C

°

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics T

= 25°C unless otherwise noted

A

Parameter Device Units

10A 10B 10C 10D 10F 10G 10J 10K

Peak Repetitive Reverse Voltage 50 100 150 200 300 400 600 800 V
Maximum RMS Voltage 35 70 105 140 210 280 420 560 V
DC Reverse Voltage (Rated VR)

Maximum Reverse Current

@ rated V

R

TA = 25°C
T

= 125°C

A

Maximum Rev erse Recovery Time
I

= 0.5 A, IR = 1.0 A, I

F

= 0.25 A

rr

Max imum Forwa rd Voltage @ 1.0 A 0.95 1.25 1.7 V
Typical Junction Capacitance

V

= 4.0 V, f = 1.0 MHz

R

1999 Fairchild Semiconductor Corporation

50 100 150 200 300 400 600 800 V

5.0

100

50 75 nS

22 15 pF

EPG10A - EPG10K, Rev. A

A

µ

A

µ