Fairchild Semiconductor CD4010CN, CD4010CMX, CD4010CM Datasheet

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Fairchild Semiconductor CD4010CN, CD4010CMX, CD4010CM Datasheet

October 1987

Revised June 2000

CD4010C

Hex Buffers (Non-Inverting)

General Description

The CD4010C hex buffers are monolithic complementary MOS (CMOS) integrated circuits. The N- and P-channel enhancement mode transistors provide a symmetrical circuit with output swings essentially equal to the supply voltage. This results in high noise immunity over a wide supply voltage range. No DC power other than that caused by leakage current is consumed during static conditions. All inputs are protected against static discharge. These gates may be used as hex buffers, CMOS to DTL or TTL interface or as CMOS current drivers. Conversion ranges are from 3V to 15V providing VCC VDD. The devices also have buffered outputs which improve transfer characteristics by providing very high gain.

Features

Wide supply voltage range: 3.0V to 15V

Low power: 100 nW (typ.)

High noise immunity: 0.45 VDD (typ.)

High current sinking: 8 mA (min.) at VO = 0.5V capability: and VDD = 10V

Applications

Automotive

Data terminals

Instrumentation

Medical electronics

Alarm system

Industrial controls

Remote metering

Computers

Ordering Code:

Order Number

Package Number

Package Description

 

 

 

CD4010CM

M16A

16-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150” Narrow

 

 

 

CD4010CN

N16E

16-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS-001, 0.300” Wide

 

 

 

Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.

Connection Diagram

Schematic Diagram

Pin Assignments for DIP and SOIC

 

Hex COS/MOS to DTL or TTL

converter (inverting).

Connect VCC to DTL or TTL supply.

Connect VDD to COS/MOS supply.

Top View

Inverting)-(Non Buffers Hex CD4010C

© 2000 Fairchild Semiconductor Corporation

DS005945

www.fairchildsemi.com

CD4010C

Absolute Maximum Ratings(Note 1)

Voltage at Any Pin (Note 2)

VSS

0.3V to VSS + 15.5V

Operating Temperature Range

 

− 45° C to + 85° C

Storage Temperature Range (TS)

 

− 65° C to + 150° C

Power Dissipation (PD)

 

 

Dual-In-Line

 

700 mW

Small Outline

 

500 mW

Lead Temperature (TL)

 

 

(Soldering, 10 seconds)

 

260° C

Operating Range (VDD)

VSS +

3V to VSS + 15V

Note 1: “Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits.”

Note 2: This device should not be connected to circuits with the power on because high transient voltage may cause permanent damage.

DC Electrical Characteristics

 

 

Test Conditions

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Characteristics

 

(Volts)

 

 

40° C

 

+ 25° C

 

+

85° C

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VO

 

VDD

Min

 

Max

Min

Typ

Max

Min

 

Max

 

ICC

Quiescent Device

 

 

 

5

 

 

 

3

 

0.03

3

 

 

42

µ A

 

Current

 

 

 

10

 

 

 

5

 

0.05

5

 

 

70

µ A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PD

Quiescent Device

 

 

 

5

 

 

 

15

 

0.15

15

 

 

210

µ W

 

Dissipation/Package

 

 

 

10

 

 

 

50

 

0.5

50

 

 

700

µ W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Voltage

 

 

 

5

 

 

 

0.01

 

0

0.01

 

 

0.05

V

VOL

LOW Level

 

 

 

10

 

 

 

0.01

 

0

0.01

 

 

0.05

V

VOH

HIGH Level

 

 

 

5

 

4.99

 

 

4.99

5

 

4.95

 

 

V

 

 

 

 

 

10

 

9.99

 

 

9.99

10

 

9.95

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise Immunity

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(All Inputs)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VNL

 

VO

1.5

 

5

 

1.6

 

 

1.5

2.25

 

1.4

 

 

V

 

 

VO

3.0

 

10

 

3.2

 

 

3

4.5

 

2.9

 

 

V

VNH

 

VO

3.5

 

5

 

1.4

 

 

1.5

2.25

 

1.5

 

 

V

 

 

VO

7.0

 

10

 

2.9

 

 

3

4.5

 

3

 

 

V

 

Output Drive Current

0.4

 

5

 

3.6

 

 

3

 

 

2.4

 

 

mA

IDN

N-Channel (Note 3)

0.5

 

10

 

9.6

 

 

8

 

 

6.4

 

 

mA

IDP

P-Channel (Note 3)

2.5

 

5

 

− 1.5

 

 

− 1.25

 

 

− 1

 

 

mA

 

 

9.5

 

10

 

− 0.72

 

 

− 0.6

 

 

− 0.48

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IIN

Input Current

 

 

 

 

 

 

 

 

 

10

 

 

 

 

pA

Note 3: IDN and IDP are tested one output at a time.

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