Fairchild Semiconductor CD4007CN, CD4007CMX, CD4007CM Datasheet

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Fairchild Semiconductor CD4007CN, CD4007CMX, CD4007CM Datasheet

October 1987

Revised January 1999

CD4007C

Dual Complementary Pair Plus Inverter

General Description

The CD4007C consists of three complementary pairs of N- and P-channel enhancement mode MOS transistors suitable for series/shunt applications. All inputs are protected from static discharge by diode clamps to VDD and VSS.

For proper operation the voltages at all pins must be constrained to be between VSS 0.3V and VDD + 0.3V at all times.

Features

Wide supply voltage range: 3.0V to 15V

High noise immunity: 0.45 VCC (typ.)

Ordering Code:

Order Number

Package Number

Package Description

 

 

 

CD4007CM

M14A

14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-120, 0.150” Narrow

 

 

 

CD4007CN

N14A

14-Lead Plastic Dual-In-Line Package (PDIP), JEDEC MS–001, 0.300” Wide

 

 

 

Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code.

Connection Diagram

Pin Assignments for DIP and SOIC

Note: All P-channel substrates are connected to VDD and all N-channel substrates are connected to VSS.

Top View

Inverter Plus Pair Complementary Dual CD4007C

© 1999 Fairchild Semiconductor Corporation

DS005943.prf

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CD4007C

Absolute Maximum Ratings(Note 1)

Voltage at Any Pin

VSS 0.3V to VDD +0.3V

Operating Temperature Range

40°C to +85°C

Storage Temperature Range

65°C to +150°C

Power Dissipation (PD)

 

Dual-In-Line

700 mW

Small Outline

500 mW

Operating VDD Range

VSS +3.0V to VSS +15V

Lead Temperature

 

(Soldering, 10 seconds)

260°C

Note 1: This device should not be connected to circuits with the power on because high transient voltages may cause permanent damage.

DC Electrical Characteristics

 

 

 

 

 

 

 

 

Limits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Conditions

 

40°C

 

+25°C

 

 

+85°C

Units

 

 

 

 

Min

Typ

Max

Min

Typ

Max

Min

Typ

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IL

Quiescent Device

VDD = 5.0V

 

 

0.5

 

0.005

0.05

 

 

15

μA

 

Current

VDD = 10V

 

 

1.0

 

0.005

1.0

 

 

30

μA

PD

Quiescent Device

VDD = 5.0V

 

 

2.5

 

0.025

2.5

 

 

75

μW

 

Dissipation Package

VDD = 10V

 

 

10

 

0.05

10

 

 

300

μW

VOL

Output Voltage

VDD = 5.0V

 

 

0.05

 

0

0.01

 

 

0.05

V

 

LOW Level

VDD = 10V

 

 

0.05

 

0

0.01

 

 

0.05

V

VOH

Output Voltage

VDD = 5.0V

4.95

 

 

4.95

5.0

 

4.95

 

 

V

 

HIGH Level

VDD = 10V

9.95

 

 

9.95

10

 

9.95

 

 

V

VNL

Noise Immunity

VDD = 5.0V, VO = 3.6V

 

 

1.5

 

2.25

1.5

 

 

1.4

V

 

(All inputs)

VDD = 10V, VO = 7.2V

 

 

3.0

 

4.5

3.0

 

 

2.9

V

VNH

Noise Immunity

VDD = 5.0V, VO = 0.95V

3.6

 

 

3.5

2.25

 

3.5

 

 

V

 

(All Inputs)

VDD = 10V, VO = 2.9V

7.1

 

 

7.0

4.5

 

7.0

 

 

V

IDN

Output Drive Current

VDD = 5.0V, VO = 0.4V, VI = VDD

0.35

 

 

0.3

1.0

 

0.24

 

 

mA

 

N-Channel

VDD = 10V, VO = 0.5V, VI = VDD

1.2

 

 

1.0

2.5

 

0.8

 

 

mA

IDP

Output Drive Current

VDD = 5.0V, VO = 2.5V, VI = VSS

1.3

 

 

1.1

4.0

 

0.9

 

 

mA

 

P-Channel

VDD = 10V, VO = 9.5V, VI = VSS

0.65

 

 

0.55

2.5

 

0.45

 

 

mA

II

Input Current

 

 

 

 

 

 

10

 

 

 

 

pA

AC Electrical Characteristics (Note 2)

TA = 25°C and CL = 15 pF and rise and fall times = 20 ns. Typical temperature coefficient for all values of VDD = 0.3%/°C

Symbol

Parameter

Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

tPLH = tPHL

Propagation Delay Time

VDD = 5.0V

 

35

75

ns

 

 

VDD = 10V

 

20

50

ns

tTLH = tTHL

Transition Time

VDD = 5.0V

 

50

100

ns

 

 

VDD = 10V

 

30

50

ns

CI

Input Capacitance

Any Input

 

5

 

pF

Note 2: AC Parameters are guaranteed by DC correlated testing.

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