Fairchild MOSFET, FDD6690A User Manual

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Fairchild MOSFET, FDD6690A User Manual

July 2003

FDD6690A

30V N-Channel PowerTrench® MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Applications

DC/DC converter

Motor Drives

Features

46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V

Low gate charge

Fast Switching Speed

High performance trench technology for extremely

low RDS(ON)

D

D

G

S G

 

D-PAK

 

 

 

 

 

 

 

TO-252

 

 

 

 

 

 

 

(TO-252)

 

 

 

 

S

 

 

 

 

 

 

Absolute Maximum Ratings TA=25oC unless otherwise noted

 

 

 

Symbol

Parameter

 

 

Ratings

 

Units

VDSS

Drain-Source Voltage

 

 

 

30

 

V

 

 

 

 

 

 

 

 

VGSS

Gate-Source Voltage

 

 

 

±20

 

V

 

 

 

 

 

 

 

 

ID

Continuous Drain Current

@TC=25°C

(Note 3)

 

46

 

A

 

 

@TA=25°C

(Note 1a)

 

12

 

 

 

 

Pulsed

(Note 1a)

 

100

 

 

 

 

 

 

 

 

 

 

PD

Power Dissipation

@TC=25°C

(Note 3)

 

56

 

W

 

 

@TA=25°C

(Note 1a)

 

3.3

 

 

 

 

@TA=25°C

(Note 1b)

 

1.5

 

 

TJ, TSTG

Operating and Storage Junction Temperature Range

 

–55 to +175

 

°C

 

 

 

 

 

 

 

 

Thermal Characteristics

 

 

 

 

 

 

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

 

2.7

 

°C/W

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

 

45

 

 

RθJA

 

 

(Note 1b)

 

96

 

 

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

Tape width

Quantity

 

 

 

 

 

 

FDD6690A

FDD6690A

D-PAK (TO-252)

13’’

12mm

2500 units

 

 

 

 

 

 

FDD6690A

©2003 Fairchild Semiconductor Corp.

FDD6690A Rev EW)

Electrical Characteristics

TA = 25°C unless otherwise noted

 

 

 

 

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

Drain-Source Avalanche Ratings (Note 2)

 

 

 

 

 

 

EAS

Drain-Source Avalanche Energy

Single Pulse, VDD = 15 V, ID= 12A

 

 

 

180

mJ

IAS

Drain-Source Avalanche Current

 

 

 

 

 

12

A

 

 

 

 

 

 

 

 

 

Off Characteristics

 

 

 

 

 

 

 

BVDSS

Drain–Source Breakdown Voltage

VGS = 0 V,

ID = 250 μA

30

 

 

V

BVDSS

Breakdown Voltage Temperature

μ

°

 

 

24

 

°

TJ

Coefficient

ID = 250 A,Referenced to 25 C

 

 

mV/ C

 

 

 

 

 

 

 

IDSS

Zero Gate Voltage Drain Current

VDS = 24 V,

VGS = 0 V

 

 

1

μ

 

 

 

A

IGSS

Gate–Body Leakage

VGS = ±20 V,

VDS = 0 V

 

 

±100

nA

On Characteristics (Note 2)

 

 

 

 

 

 

 

VGS(th)

Gate Threshold Voltage

VDS = VGS,

ID = 250 μA

1

1.9

3

V

VGS(th)

Gate Threshold Voltage

ID = 250 μA,Referenced to 25°C

 

–5

 

mV/°C

TJ

Temperature Coefficient

 

 

 

 

 

 

 

RDS(on)

Static Drain–Source

VGS = 10 V,

ID = 12 A

 

7.7

12

mΩ

 

On–Resistance

VGS = 4.5 V,

ID = 10 A

 

9.9

14

 

 

 

 

°

 

 

11.4

19

 

 

 

VGS = 10 V, ID = 12 A,TJ=125 C

 

 

 

 

ID(on)

On–State Drain Current

VGS = 10 V,

VDS = 5 V

50

 

 

A

gFS

Forward Transconductance

VDS = 10 V,

ID = 12 A

 

47

 

S

Dynamic Characteristics

 

 

 

 

 

 

 

Ciss

Input Capacitance

VDS = 15 V,

V GS = 0 V,

 

1230

 

pF

 

 

 

 

 

 

Coss

Output Capacitance

 

325

 

pF

f = 1.0 MHz

 

 

 

 

 

 

 

 

 

 

 

 

Crss

Reverse Transfer Capacitance

 

 

 

150

 

pF

 

 

 

 

 

 

 

 

 

 

 

 

 

RG

Gate Resistance

VGS = 15 mV,

f = 1.0 MHz

 

1.5

 

pF

Switching Characteristics (Note 2)

 

 

 

 

 

 

 

td(on)

Turn–On Delay Time

 

 

 

 

10

19

ns

 

 

 

 

 

 

 

 

tr

Turn–On Rise Time

VDD = 15 V,

ID = 1 A,

 

7

13

ns

td(off)

Turn–Off Delay Time

VGS = 10 V,

RGEN = 6 Ω

 

29

46

ns

tf

Turn–Off Fall Time

 

 

 

 

12

21

ns

Qg

Total Gate Charge

VDS = 15V,

ID = 12 A,

 

13

18

nC

Qgs

Gate–Source Charge

 

3.5

 

nC

VGS = 5 V

 

 

 

 

 

 

 

 

 

 

 

 

Qgd

Gate–Drain Charge

 

 

 

5.1

 

nC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FDD6690A

FDD6690A Rev. EW)

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