July 2003
FDD6690A
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.
Applications
∙DC/DC converter
∙Motor Drives
Features
∙ 46 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 14 mΩ @ VGS = 4.5 V
∙Low gate charge
∙Fast Switching Speed
∙High performance trench technology for extremely
low RDS(ON)
D
D
G
S G
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D-PAK |
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TO-252 |
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(TO-252) |
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S |
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Absolute Maximum Ratings TA=25oC unless otherwise noted |
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Symbol |
Parameter |
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Ratings |
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Units |
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VDSS |
Drain-Source Voltage |
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30 |
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V |
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VGSS |
Gate-Source Voltage |
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±20 |
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V |
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ID |
Continuous Drain Current |
@TC=25°C |
(Note 3) |
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46 |
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A |
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@TA=25°C |
(Note 1a) |
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12 |
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Pulsed |
(Note 1a) |
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100 |
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PD |
Power Dissipation |
@TC=25°C |
(Note 3) |
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56 |
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W |
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@TA=25°C |
(Note 1a) |
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3.3 |
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@TA=25°C |
(Note 1b) |
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1.5 |
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TJ, TSTG |
Operating and Storage Junction Temperature Range |
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–55 to +175 |
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°C |
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Thermal Characteristics |
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RθJC |
Thermal Resistance, Junction-to-Case |
(Note 1) |
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2.7 |
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°C/W |
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RθJA |
Thermal Resistance, Junction-to-Ambient |
(Note 1a) |
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45 |
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RθJA |
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(Note 1b) |
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96 |
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Package Marking and Ordering Information
Device Marking |
Device |
Package |
Reel Size |
Tape width |
Quantity |
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FDD6690A |
FDD6690A |
D-PAK (TO-252) |
13’’ |
12mm |
2500 units |
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FDD6690A
©2003 Fairchild Semiconductor Corp. |
FDD6690A Rev EW) |
Electrical Characteristics |
TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
Test Conditions |
Min |
Typ |
Max |
Units |
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Drain-Source Avalanche Ratings (Note 2) |
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EAS |
Drain-Source Avalanche Energy |
Single Pulse, VDD = 15 V, ID= 12A |
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180 |
mJ |
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IAS |
Drain-Source Avalanche Current |
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12 |
A |
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Off Characteristics |
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BVDSS |
Drain–Source Breakdown Voltage |
VGS = 0 V, |
ID = 250 μA |
30 |
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V |
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BVDSS |
Breakdown Voltage Temperature |
μ |
° |
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24 |
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° |
TJ |
Coefficient |
ID = 250 A,Referenced to 25 C |
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mV/ C |
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IDSS |
Zero Gate Voltage Drain Current |
VDS = 24 V, |
VGS = 0 V |
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1 |
μ |
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A |
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IGSS |
Gate–Body Leakage |
VGS = ±20 V, |
VDS = 0 V |
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±100 |
nA |
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On Characteristics (Note 2) |
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VGS(th) |
Gate Threshold Voltage |
VDS = VGS, |
ID = 250 μA |
1 |
1.9 |
3 |
V |
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VGS(th) |
Gate Threshold Voltage |
ID = 250 μA,Referenced to 25°C |
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–5 |
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mV/°C |
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TJ |
Temperature Coefficient |
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RDS(on) |
Static Drain–Source |
VGS = 10 V, |
ID = 12 A |
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7.7 |
12 |
mΩ |
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On–Resistance |
VGS = 4.5 V, |
ID = 10 A |
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9.9 |
14 |
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° |
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11.4 |
19 |
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VGS = 10 V, ID = 12 A,TJ=125 C |
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ID(on) |
On–State Drain Current |
VGS = 10 V, |
VDS = 5 V |
50 |
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A |
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gFS |
Forward Transconductance |
VDS = 10 V, |
ID = 12 A |
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47 |
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S |
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Dynamic Characteristics |
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Ciss |
Input Capacitance |
VDS = 15 V, |
V GS = 0 V, |
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1230 |
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pF |
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Coss |
Output Capacitance |
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325 |
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pF |
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f = 1.0 MHz |
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Crss |
Reverse Transfer Capacitance |
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150 |
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pF |
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RG |
Gate Resistance |
VGS = 15 mV, |
f = 1.0 MHz |
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1.5 |
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pF |
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Switching Characteristics (Note 2) |
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td(on) |
Turn–On Delay Time |
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10 |
19 |
ns |
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tr |
Turn–On Rise Time |
VDD = 15 V, |
ID = 1 A, |
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7 |
13 |
ns |
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td(off) |
Turn–Off Delay Time |
VGS = 10 V, |
RGEN = 6 Ω |
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29 |
46 |
ns |
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tf |
Turn–Off Fall Time |
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12 |
21 |
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Qg |
Total Gate Charge |
VDS = 15V, |
ID = 12 A, |
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13 |
18 |
nC |
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Qgs |
Gate–Source Charge |
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3.5 |
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nC |
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VGS = 5 V |
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Qgd |
Gate–Drain Charge |
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5.1 |
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nC |
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FDD6690A
FDD6690A Rev. EW)