Fairchild PN4117, PN4118, PN4119, MMBF4117, MMBF4118 service manual

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Fairchild PN4117, PN4118, PN4119, MMBF4117, MMBF4118 service manual

 

 

 

 

 

 

 

 

 

MMBF4117

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PN4117

 

 

 

 

 

 

 

PN4118

MMBF4118

 

 

 

 

 

 

 

PN4119

MMBF4119

 

G

 

 

 

S

G

TO-92

 

S D

SOT-23

D

Mark: 61A / 61C / 61E

NOTE: Source & Drain

are interchangeable

N-Channel Switch

This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

VDG

Drain-Gate Voltage

40

V

VGS

Gate-Source Voltage

- 40

V

IGF

Forward Gate Current

50

mA

TJ ,Tstg

Operating and Storage Junction Temperature Range

-55 to +150

° C

 

 

 

 

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

PN4117-4119

 

*MMBF4117-4119

 

PD

Total Device Dissipation

350

 

225

mW

 

Derate above 25° C

2.8

 

1.8

mW/° C

Rθ JC

Thermal Resistance, Junction to Case

125

 

 

° C/W

 

 

 

 

 

 

Rθ JA

Thermal Resistance, Junction to Ambient

357

 

556

° C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

4119 / 4118 / MMBF4117 / 4119 / 4118 / PN4117

1997 Fairchild Semiconductor Corporation

N-Channel Switch

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

 

Min

Max

Units

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

V(BR)GSS

Gate-Source Breakdown Voltage

IG = - 1.0 A, VDS = 0

 

- 40

 

V

 

 

 

 

 

 

 

 

IGSS

Gate Reverse Current

VGS = - 20 V, VDS = 0

 

 

- 10

pA

 

 

VGS = - 20 V, VDS = 0, TA = 150° C

 

- 25

nA

VGS(off)

Gate-Source Cutoff Voltage

VDS = - 10 V, ID = 1.0 nA

4117

- 0.6

- 1.8

V

 

 

 

4118

- 1.0

- 3.0

V

 

 

 

4119

- 2.0

- 6.0

V

ON CHARACTERISTICS

 

 

 

 

 

 

IDSS

Zero-Gate Voltage Drain Current*

VDS = 10 V, VGS = 0

4117

30

90

A

 

 

 

4118

80

240

A

 

 

 

4119

200

600

A

SMALL-SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

gfs

Common-Source Forward

VDS = 10 V VGS = 0, f= 1.0 kHz

70

210

 

 

 

Transconductance

 

4117

mhos

 

 

 

4118

80

250

mhos

 

 

 

4119

100

330

mhos

goss

Common-Source Output

VDS = 10 V VGS = 0, f= 1.0 kHz

 

3.0

 

 

 

Conductance

 

4117

 

mhos

 

 

 

4118

 

5.0

mhos

 

 

 

4119

 

10

mhos

Re(yfs)

Common-Source Forwad

VDS = 10 V, VGS = 0, f= 30 MHz

60

 

 

 

 

Transconductance

 

4117

 

mhos

 

 

 

4118

70

 

mhos

 

 

 

4119

90

 

mhos

Ciss

Input Capacitance

VDS = 10 V, VGS = 0, f= 1.0 kHz

 

3.0

pF

 

Crss

Reverse Transfer Capacitance

VDS = 10 V, VGS = 0, f= 1.0 MHz,

 

1.5

pF

 

*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%

4119 / 4118 / MMBF4117 / 4119 / 4118 / PN4117

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