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MMBFJ111 |
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J111 |
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J112 |
MMBFJ112 |
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J113 |
MMBFJ113 |
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G |
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S |
G |
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TO-92 |
SOT-23 D |
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S D |
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Mark: 6P / 6R / 6S |
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
Value |
Units |
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VDG |
Drain-Gate Voltage |
35 |
V |
VGS |
Gate-Source Voltage |
- 35 |
V |
IGF |
Forward Gate Current |
50 |
mA |
TJ ,Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
° C |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)These ratings are based on a maximum junction temperature of 150 degrees C.
2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol |
Characteristic |
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Max |
Units |
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J111-113 |
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*MMBFJ111-113 |
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PD |
Total Device Dissipation |
625 |
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350 |
mW |
|
Derate above 25° C |
5.0 |
|
2.8 |
mW/° C |
Rθ JC |
Thermal Resistance, Junction to Case |
125 |
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° C/W |
Rθ JA |
Thermal Resistance, Junction to Ambient |
357 |
|
556 |
° C/W |
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
13MMBFJ1 / 12MMBFJ1 / 11MMBFJ1 / 13J1 / 12J1 / 11J1
2001 Fairchild Semiconductor Corporation |
J111/112/113/MMBFJ111/112/113, Rev A |
N-Channel Switch
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol |
Parameter |
Test Conditions |
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Min |
Max |
Units |
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OFF CHARACTERISTICS |
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V(BR)GSS |
Gate-Source Breakdown Voltage |
IG = - 1.0 µ A, VDS = 0 |
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- 35 |
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V |
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IGSS |
Gate Reverse Current |
VGS = - 15 V, VDS = 0 |
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- 1.0 |
nA |
VGS(off) |
Gate-Source Cutoff Voltage |
VDS = 5.0 V, ID = 1.0 µ A |
111 |
- 3.0 |
- 10 |
V |
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112 |
- 1.0 |
- 5.0 |
V |
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113 |
- 0.5 |
- 3.0 |
V |
ID(off) |
Drain Cutoff Leakage Current |
VDS = 5.0 V, VGS = - 10 V |
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1.0 |
nA |
ON CHARACTERISTICS |
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IDSS |
Zero-Gate Voltage Drain Current* |
VDS = 15 V, IGS = 0 |
111 |
20 |
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mA |
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112 |
5.0 |
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mA |
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113 |
2.0 |
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mA |
rDS(on) |
Drain-Source On Resistance |
VDS ≤ 0.1 V, VGS = 0 |
111 |
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30 |
Ω |
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112 |
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50 |
Ω |
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113 |
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100 |
Ω |
SMALL-SIGNAL CHARACTERISTICS |
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Cdg(on) |
Drain Gate & Source Gate On |
VDS = 0, VGS = 0, f = 1.0 MHz |
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28 |
pF |
Csg(on) |
Capacitance |
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Cdg(off) |
Drain-Gate Off Capacitance |
VDS = 0, VGS = - 10 V, f = 1.0 MHz |
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5.0 |
pF |
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Csg(off) |
Source-Gate Off Capacitance |
VDS = 0, VGS = - 10 V, f = 1.0 MHz |
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5.0 |
pF |
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 3.0%
Typical Characteristics
Common Drain-Source
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10 |
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TA = 25°C |
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V GS = 0 V |
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(mA) |
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TYP |
V GS(off) = - 2.0 V |
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8 |
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- 0.2 V |
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CURRENT |
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- 0.4 V |
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6 |
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- 0.6 V |
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DRAIN |
4 |
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- 0.8 V |
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- 1.0 V |
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2 |
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D |
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- 1.4 V |
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- 1.2 V |
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I |
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0 |
0.4 |
0.8 |
1.2 |
1.6 |
2 |
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0 |
VDS - DRAIN-SOURCE VOLTAGE (V)
Parameter Interactions
- TRANSCONDUCTANCE (mmhos) |
100 |
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100 |
r |
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DS |
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r DS |
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RESISTANCE "ON" DRAIN - |
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50 |
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50 |
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20 |
g fs |
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20 |
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I DSS , g fs @ VDS = 15V, |
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10 |
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V GS = 0 PULSED |
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10 |
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r DS @ 1.0 mA, VGS = 0 |
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I DSS |
V GS(off) @ V DS = 15V, |
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I D = 1.0 nA |
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fs |
5 |
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5 |
) Ω( |
g |
_ 1 |
_ 2 |
_ 5 |
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_ 0.5 |
_ |
10 |
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
13MMBFJ1 / 12MMBFJ1 / 11MMBFJ1 / 13J1 / 12J1 / 11J1
N-Channel Switch
(continued)
Typical Characteristics (continued)
Transfer Characteristics
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40 |
VGS(off) = - 3.0 V |
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(mA) |
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- 55°C |
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30 |
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25°C |
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CURRENT |
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125°C |
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VGS(off) = - 2.0 V |
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20 |
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125°C |
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25°C |
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- DRAIN |
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- 55°C |
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10 |
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V DS = 15 V |
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D |
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I |
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0 |
-1 |
-2 |
-3 |
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0 |
VGS - GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
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16 |
VGS(off) = - 1.6 V |
V DS = 15 V |
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(mA) |
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- 55°C |
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12 |
25°C |
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CURRENT |
125°C |
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8 |
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VGS(off) = - 1.1 V |
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- DRAIN |
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125°C |
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25°C |
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4 |
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- 55°C |
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D |
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I |
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0 |
-0.5 |
-1 |
-1.5 |
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0 |
VGS - GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
(mmhos) |
30 |
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VGS(off) = - 3.0 V |
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- 55°C |
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25°C |
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- TRANSCONDUCTANCE |
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20 |
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125°C |
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VGS(off) = - 2.0 V |
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- 55°C |
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25°C |
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10 |
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125°C |
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V DS = 15 V |
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fs |
0 |
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g |
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0 |
-1 |
-2 |
-3 |
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VGS - GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
(mmhos) |
30 |
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VGS(off) = - 1.6 V |
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- TRANSCONDUCTANCE |
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- 55°C |
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20 |
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25°C |
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125°C |
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10 |
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VGS(off) = - 1.1 V |
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- 55°C |
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25°C |
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125°C |
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V DS = 15 V |
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fs |
0 |
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g |
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0 |
-0.5 |
-1 |
-1.5 |
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VGS - GATE-SOURCE VOLTAGE (V)
On Resistance vs Drain Current
) |
100 |
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(Ω |
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RESISTANCE |
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125°C |
V GS(off) |
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TYP = - 2.0V |
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50 |
25°C |
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"ON" |
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125°C |
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V GS(off) |
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- 55°C |
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TYP = - 7.0V |
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DRAIN |
20 |
25°C |
r DS @ V GS = 0 |
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- |
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DS |
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- 55°C |
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r |
10 |
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1 |
2 |
5 |
10 |
20 |
50 |
100 |
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I D - DRAIN CURRENT (mA)
Normalized Drain Resistance
( Ω ) |
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vs Bias Voltage |
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RESISTANCE |
100 |
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50 |
VGS(off) @ 5.0V, 10 A |
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20 |
r DS = |
r DS |
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VGS |
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- NORMALIZED |
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1 - |
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10 |
VGS(off) |
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5 |
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2 |
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DS |
1 |
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r |
0.2 |
0.4 |
0.6 |
0.8 |
1 |
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0 |
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111
N-Channel Switch
(continued)
Typical Characteristics |
(continued) |
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Transconductance |
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(mmhos) |
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vs Drain Current |
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100 |
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TA = 25°C |
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VDG = 15V |
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- TRANSCONDUCTANCE |
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f = 1.0 kHz |
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10 |
V GS(off) = - 1.4V |
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V GS(off) = - 3.0V |
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1 |
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fs |
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0.1 |
1 |
10 |
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g |
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I D - DRAIN CURRENT (mA) |
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Output Conductance
mhos) |
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vs Drain Current |
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100 |
T A = 25°C |
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V DG = 5.0V |
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( |
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5.0V |
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CONDUCTANCE |
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f = 1.0 kHz |
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10V |
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5.0V |
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15V |
10V |
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10 |
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20V |
10V |
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V GS(off) = - 5.0V |
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15V |
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20V |
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15V |
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20V |
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1 |
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- OUTPUT |
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V GS(off) |
= - 2.0V |
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VGS(off) = - 0.85V |
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0.1 |
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os |
0.01 |
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0.1 |
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10 |
g |
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I D - DRAIN CURRENT (mA) |
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Capacitance vs Voltage |
Noise Voltage vs Frequency |
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100 |
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Hz) |
100 |
VDG = 15V |
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(pF) |
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50 |
BW = 6.0 Hz @ f = 10 Hz, 100 Hz |
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√ |
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CAPACITANCE- |
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f = 0.1 - 1.0 MHz |
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(nVVOLTAGE/ |
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= 0.21 @ f ≥ |
1.0 kHz |
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10 |
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C is |
(V DS = 0) |
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10 |
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(C |
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NOISE |
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I D = 10 mA |
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5 |
I D |
= 1.0 mA |
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) |
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rs |
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C is (VDS = 20) |
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is |
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C rs (VDS = 0) |
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- |
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n |
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C |
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e |
1 |
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1 |
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0.01 |
1 |
10 |
100 |
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0 |
-4 |
-8 |
-12 |
-16 |
-20 |
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V GS - GATE-SOURCE VOLTAGE (V) f - FREQUENCY (kHz)
Noise Voltage vs Current Power Dissipation vs
100 |
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Ambient Temperature |
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Hz) |
V DG = 15V |
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DISSIPATION(mW) |
700 |
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√ |
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VOLTAGENOISE- (nV / |
f = 10 kHz |
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600 |
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f = 10 Hz |
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500 |
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TO-92 |
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f = 100 Hz |
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f = 1.0 kHz |
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SOT-23 |
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10 |
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400 |
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POWER- |
300 |
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n |
f = 100 kHz |
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100 |
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200 |
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e |
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D |
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1 |
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P |
0 |
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0.1 |
1 |
10 |
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25 |
50 |
75 |
100 |
125 |
150 |
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0.01 |
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0 |
|||||||||
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I D - DRAIN CURRENT (mA) |
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TEMPERATURE ( o C) |
|
|
MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111
Typical Characteristics (continued)
|
|
Switching Turn-On Time |
|
|
|||
(ns)TIMEON-TURN |
|
vs Gate-Source Voltage |
|
(ns)TIMEOFF-TURN |
|||
25 |
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V DD = 3.0V |
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t r (ON) |
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|
20 |
t r |
APPROX. I D INDEPENDENT |
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VGS(off) = 3.0V |
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15 |
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T A = 25°C |
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10 |
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I D = 6.6 mA |
|
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d(ON)- |
2.5 mA |
t d (ON) |
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V GS = -12V |
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OFF- |
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- 6.0V |
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t r(ON) ,t |
5 |
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d(OFF) ,t |
0 |
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0 |
-2 |
-4 |
-6 |
-8 |
-10 |
t |
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|
V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V) |
|
N-Channel Switch
(continued)
|
Switching Turn-Off Time |
|
|||
|
vs Drain Current |
|
|||
100 |
|
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T A = 25°C |
|
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80 |
VGS(off)= -2.2V |
|
VDD |
= 3.0V |
|
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- 4.0V |
t (off) |
VGS = -12V |
|
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60 |
- 7.5V |
t d(off) DEVICE |
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40 |
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V GS(off) INDEPENDENT |
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20 |
t d(off) |
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0 |
2 |
4 |
6 |
8 |
10 |
0 |
I D - DRAIN CURRENT (mA)
MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111