Fairchild MMBFJ111, MMBFJ112, MMBFJ113, J111, J112 Schematic [ru]

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MMBFJ111

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J111

 

 

 

 

 

 

 

 

J112

MMBFJ112

 

 

 

 

 

 

 

 

J113

MMBFJ113

 

 

 

 

 

 

 

 

 

 

G

 

 

 

 

 

 

 

 

 

 

S

G

 

 

 

 

 

 

 

 

TO-92

SOT-23 D

 

S D

 

 

 

 

 

 

 

 

 

 

Mark: 6P / 6R / 6S

NOTE: Source & Drain

are interchangeable

N-Channel Switch

This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51.

Absolute Maximum Ratings* TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

 

 

 

 

VDG

Drain-Gate Voltage

35

V

VGS

Gate-Source Voltage

- 35

V

IGF

Forward Gate Current

50

mA

TJ ,Tstg

Operating and Storage Junction Temperature Range

-55 to +150

° C

 

 

 

 

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1)These ratings are based on a maximum junction temperature of 150 degrees C.

2)These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics TA = 25°C unless otherwise noted

Symbol

Characteristic

 

Max

Units

 

 

 

 

 

 

 

 

J111-113

 

*MMBFJ111-113

 

PD

Total Device Dissipation

625

 

350

mW

 

Derate above 25° C

5.0

 

2.8

mW/° C

Rθ JC

Thermal Resistance, Junction to Case

125

 

 

° C/W

Rθ JA

Thermal Resistance, Junction to Ambient

357

 

556

° C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

13MMBFJ1 / 12MMBFJ1 / 11MMBFJ1 / 13J1 / 12J1 / 11J1

2001 Fairchild Semiconductor Corporation

J111/112/113/MMBFJ111/112/113, Rev A

N-Channel Switch

(continued)

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

 

Min

Max

Units

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

V(BR)GSS

Gate-Source Breakdown Voltage

IG = - 1.0 µ A, VDS = 0

 

- 35

 

V

 

 

 

 

 

 

 

IGSS

Gate Reverse Current

VGS = - 15 V, VDS = 0

 

 

- 1.0

nA

VGS(off)

Gate-Source Cutoff Voltage

VDS = 5.0 V, ID = 1.0 µ A

111

- 3.0

- 10

V

 

 

 

112

- 1.0

- 5.0

V

 

 

 

113

- 0.5

- 3.0

V

ID(off)

Drain Cutoff Leakage Current

VDS = 5.0 V, VGS = - 10 V

 

 

1.0

nA

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

IDSS

Zero-Gate Voltage Drain Current*

VDS = 15 V, IGS = 0

111

20

 

mA

 

 

 

112

5.0

 

mA

 

 

 

113

2.0

 

mA

rDS(on)

Drain-Source On Resistance

VDS ≤ 0.1 V, VGS = 0

111

 

30

 

 

 

112

 

50

 

 

 

113

 

100

SMALL-SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Cdg(on)

Drain Gate & Source Gate On

VDS = 0, VGS = 0, f = 1.0 MHz

 

 

28

pF

Csg(on)

Capacitance

 

 

 

 

 

Cdg(off)

Drain-Gate Off Capacitance

VDS = 0, VGS = - 10 V, f = 1.0 MHz

 

5.0

pF

Csg(off)

Source-Gate Off Capacitance

VDS = 0, VGS = - 10 V, f = 1.0 MHz

 

5.0

pF

*Pulse Test: Pulse Width 300 s, Duty Cycle 3.0%

Typical Characteristics

Common Drain-Source

 

10

 

 

 

TA = 25°C

 

 

 

V GS = 0 V

 

 

 

(mA)

 

 

TYP

V GS(off) = - 2.0 V

 

8

 

 

- 0.2 V

 

 

 

 

 

 

 

CURRENT

 

 

 

- 0.4 V

 

 

6

 

 

 

 

 

 

 

 

- 0.6 V

 

 

 

 

 

 

 

 

DRAIN

4

 

 

 

 

 

 

 

 

- 0.8 V

 

 

 

 

 

- 1.0 V

 

-

2

 

 

 

 

D

 

 

- 1.4 V

 

 

 

 

 

- 1.2 V

 

I

 

 

 

 

 

0

0.4

0.8

1.2

1.6

2

 

0

VDS - DRAIN-SOURCE VOLTAGE (V)

Parameter Interactions

- TRANSCONDUCTANCE (mmhos)

100

 

 

 

 

100

r

 

 

 

 

DS

 

 

 

 

 

 

 

 

r DS

 

 

 

RESISTANCE "ON" DRAIN -

50

 

 

 

 

50

20

g fs

 

 

 

20

 

 

 

I DSS , g fs @ VDS = 15V,

 

 

10

 

 

V GS = 0 PULSED

 

10

 

 

 

r DS @ 1.0 mA, VGS = 0

 

 

 

 

I DSS

V GS(off) @ V DS = 15V,

 

 

 

 

I D = 1.0 nA

 

 

fs

5

 

 

 

 

5

) (

g

_ 1

_ 2

_ 5

 

_ 0.5

_

10

VGS (OFF) - GATE CUTOFF VOLTAGE (V)

13MMBFJ1 / 12MMBFJ1 / 11MMBFJ1 / 13J1 / 12J1 / 11J1

N-Channel Switch

(continued)

Typical Characteristics (continued)

Transfer Characteristics

 

40

VGS(off) = - 3.0 V

 

(mA)

 

 

 

 

- 55°C

 

30

 

25°C

 

CURRENT

 

125°C

 

 

 

 

 

 

VGS(off) = - 2.0 V

 

20

 

125°C

 

 

25°C

 

- DRAIN

 

 

- 55°C

 

10

 

 

V DS = 15 V

D

 

 

 

 

I

 

 

 

 

 

0

-1

-2

-3

 

0

VGS - GATE-SOURCE VOLTAGE (V)

Transfer Characteristics

 

16

VGS(off) = - 1.6 V

V DS = 15 V

(mA)

 

 

- 55°C

 

 

12

25°C

 

 

CURRENT

125°C

 

 

 

 

 

8

 

VGS(off) = - 1.1 V

 

- DRAIN

 

 

125°C

 

 

 

25°C

 

4

 

- 55°C

 

D

 

 

 

 

I

 

 

 

 

 

0

-0.5

-1

-1.5

 

0

VGS - GATE-SOURCE VOLTAGE (V)

Transfer Characteristics

(mmhos)

30

 

VGS(off) = - 3.0 V

 

 

 

 

 

 

- 55°C

 

 

 

25°C

 

- TRANSCONDUCTANCE

 

 

 

20

 

125°C

 

 

VGS(off) = - 2.0 V

 

 

 

 

 

 

- 55°C

 

 

 

25°C

 

10

 

125°C

 

 

 

 

 

V DS = 15 V

 

 

fs

0

 

 

 

g

 

 

 

0

-1

-2

-3

 

VGS - GATE-SOURCE VOLTAGE (V)

Transfer Characteristics

(mmhos)

30

 

 

 

 

 

VGS(off) = - 1.6 V

- TRANSCONDUCTANCE

 

 

- 55°C

 

20

 

25°C

 

 

 

125°C

 

10

 

VGS(off) = - 1.1 V

 

 

- 55°C

 

 

 

25°C

 

 

 

125°C

 

V DS = 15 V

 

 

fs

0

 

 

 

g

 

 

 

0

-0.5

-1

-1.5

 

VGS - GATE-SOURCE VOLTAGE (V)

On Resistance vs Drain Current

)

100

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

RESISTANCE

 

125°C

V GS(off)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TYP = - 2.0V

 

 

 

 

 

 

50

25°C

 

 

 

 

 

 

"ON"

 

125°C

 

 

 

V GS(off)

 

 

 

- 55°C

 

 

 

TYP = - 7.0V

 

 

DRAIN

20

25°C

r DS @ V GS = 0

 

 

 

 

-

 

 

 

 

 

 

 

 

DS

 

- 55°C

 

 

 

 

 

 

r

10

 

 

 

 

 

 

 

 

1

2

5

10

20

50

100

 

 

I D - DRAIN CURRENT (mA)

Normalized Drain Resistance

( Ω )

 

vs Bias Voltage

 

 

RESISTANCE

100

 

 

 

 

 

50

VGS(off) @ 5.0V, 10 A

 

 

 

 

 

 

 

 

20

r DS =

r DS

 

 

 

VGS

 

 

 

- NORMALIZED

 

 

 

 

 

1 -

 

 

 

10

VGS(off)

 

 

 

 

 

 

 

5

 

 

 

 

 

2

 

 

 

 

 

DS

1

 

 

 

 

 

r

0.2

0.4

0.6

0.8

1

 

0

VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)

MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111

Fairchild MMBFJ111, MMBFJ112, MMBFJ113, J111, J112 Schematic

N-Channel Switch

(continued)

Typical Characteristics

(continued)

 

 

Transconductance

(mmhos)

 

vs Drain Current

 

100

 

TA = 25°C

 

 

 

 

VDG = 15V

- TRANSCONDUCTANCE

 

 

 

 

f = 1.0 kHz

10

V GS(off) = - 1.4V

 

 

V GS(off) = - 3.0V

 

1

 

 

fs

 

 

0.1

1

10

g

 

I D - DRAIN CURRENT (mA)

 

 

Output Conductance

mhos)

 

vs Drain Current

 

 

100

T A = 25°C

 

 

 

 

 

 

V DG = 5.0V

 

 

 

(

 

 

5.0V

 

CONDUCTANCE

 

 

 

 

 

 

f = 1.0 kHz

 

10V

 

5.0V

 

 

 

15V

10V

 

10

 

 

20V

10V

V GS(off) = - 5.0V

 

15V

20V

 

15V

 

 

 

 

 

 

 

20V

1

 

 

 

 

 

- OUTPUT

 

 

V GS(off)

= - 2.0V

 

 

 

 

 

VGS(off) = - 0.85V

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

os

0.01

 

0.1

 

 

10

g

 

 

I D - DRAIN CURRENT (mA)

 

 

 

 

 

 

 

Capacitance vs Voltage

Noise Voltage vs Frequency

 

100

 

 

 

 

Hz)

100

VDG = 15V

 

 

 

(pF)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

BW = 6.0 Hz @ f = 10 Hz, 100 Hz

 

 

 

 

 

 

 

 

 

CAPACITANCE-

 

 

f = 0.1 - 1.0 MHz

 

(nVVOLTAGE/

 

= 0.21 @ f

1.0 kHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

C is

(V DS = 0)

 

10

 

 

 

 

(C

 

 

 

NOISE

 

I D = 10 mA

 

 

 

 

 

 

 

 

5

I D

= 1.0 mA

 

)

 

 

 

 

 

 

 

 

rs

 

 

 

C is (VDS = 20)

 

 

 

 

 

 

is

 

C rs (VDS = 0)

 

 

-

 

 

 

 

 

 

 

 

n

 

 

 

 

 

C

 

 

 

 

 

e

1

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.01

1

10

100

 

0

-4

-8

-12

-16

-20

 

 

 

 

 

 

V GS - GATE-SOURCE VOLTAGE (V) f - FREQUENCY (kHz)

Noise Voltage vs Current Power Dissipation vs

100

 

 

 

 

 

Ambient Temperature

 

 

Hz)

V DG = 15V

 

 

 

 

 

 

 

 

DISSIPATION(mW)

700

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGENOISE- (nV /

f = 10 kHz

 

 

600

 

 

 

 

 

 

f = 10 Hz

 

500

 

 

TO-92

 

 

 

 

 

f = 100 Hz

 

 

 

 

 

 

 

 

 

 

f = 1.0 kHz

 

 

 

SOT-23

 

 

 

 

 

10

 

 

 

 

400

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER-

300

 

 

 

 

 

 

n

f = 100 kHz

 

 

100

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

e

 

 

 

D

 

 

 

 

 

 

 

1

 

 

 

P

0

 

 

 

 

 

 

0.1

1

10

 

25

50

75

100

125

150

0.01

 

0

 

I D - DRAIN CURRENT (mA)

 

 

 

 

TEMPERATURE ( o C)

 

 

MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111

Typical Characteristics (continued)

 

 

Switching Turn-On Time

 

 

(ns)TIMEON-TURN

 

vs Gate-Source Voltage

 

(ns)TIMEOFF-TURN

25

 

V DD = 3.0V

 

 

 

 

 

 

 

 

 

t r (ON)

 

 

 

 

20

t r

APPROX. I D INDEPENDENT

 

 

 

 

 

 

 

 

 

VGS(off) = 3.0V

 

 

 

 

15

 

T A = 25°C

 

 

 

 

10

 

 

 

I D = 6.6 mA

 

 

d(ON)-

2.5 mA

t d (ON)

 

V GS = -12V

 

OFF-

 

 

 

 

- 6.0V

 

 

 

 

 

 

 

 

 

 

 

t r(ON) ,t

5

 

 

 

 

 

d(OFF) ,t

0

 

 

 

 

 

 

0

-2

-4

-6

-8

-10

t

 

 

 

 

V GS(off) - GATE-SOURCE CUTOFF VOLTAGE (V)

 

N-Channel Switch

(continued)

 

Switching Turn-Off Time

 

 

vs Drain Current

 

100

 

 

T A = 25°C

 

 

 

 

 

80

VGS(off)= -2.2V

 

VDD

= 3.0V

 

 

- 4.0V

t (off)

VGS = -12V

 

60

- 7.5V

t d(off) DEVICE

 

 

 

 

 

40

 

 

V GS(off) INDEPENDENT

 

 

 

 

 

 

20

t d(off)

 

 

 

 

0

2

4

6

8

10

0

I D - DRAIN CURRENT (mA)

MMBFJ113 / MMBFJ112 / MMBFJ111 / J113 / J112 / J111

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