September 2009
H11AA1M, H11AA2M, H11AA3M, H11AA4M
AC Input/Phototransistor Optocouplers
Features
■Bi-polar emitter input
■Built-in reverse polarity input protection
■Underwriters Laboratory (UL) recognized File #E90700, Volume 2
■VDE approved File #102497 (ordering option ‘V’)
Description
The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output.
Applications
■ AC line monitor
■ Unknown polarity DC sensor
■ Telephone line interface
Schematic |
|
Package Outlines |
1 |
6 |
BASE |
2 |
5 |
COLL |
3 |
4 |
EMITTER |
Optocouplers Input/Phototransistor AC — H11AA4M H11AA3M, H11AA2M, H11AA1M,
©2006 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 |
|
Absolute Maximum Ratings (TA =25°C Unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol |
Parameter |
Device |
Value |
Units |
|
|
|
|
|
TOTAL DEVICE |
|
|
|
|
|
|
|
|
|
TSTG |
Storage Temperature |
All |
-40 to +150 |
°C |
TOPR |
Operating Temperature |
All |
-40 to +100 |
°C |
TSOL |
Lead Solder Temperature |
All |
260 for 10 sec |
°C |
PD |
Total Device Power Dissipation |
All |
250 |
mW |
|
Derate Linearly From 25°C |
|
2.94 |
mW/°C |
|
|
|
|
|
EMITTER |
|
|
|
|
|
|
|
|
|
IF |
Continuous Forward Current |
All |
60 |
mA |
IF(pk) |
Forward Current – Peak (1µs pulse, 300 pps) |
All |
±1.0 |
A |
PD |
LED Power Dissipation |
All |
120 |
mW |
|
Derate Linearly From 25°C |
|
1.41 |
mW/°C |
|
|
|
|
|
DETECTOR |
|
|
|
|
|
|
|
|
|
IC |
Continuous Collector Current |
All |
50 |
mA |
PD |
Detector Power Dissipation |
All |
150 |
mW |
|
Derate linearity from 25°C |
|
1.76 |
mW/°C |
|
|
|
|
|
Optocouplers Input/Phototransistor AC — H11AA4M H11AA3M, H11AA2M, H11AA1M,
©2006 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 |
2 |
Electrical Characteristics (TA = 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol |
|
Parameter |
|
Test Conditions |
|
Device |
Min. |
|
Typ.* |
|
Max. |
|
Unit |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
EMITTER |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
VF |
Input Forward Voltage |
IF = ±10mA |
|
|
All |
|
1.17 |
|
|
1.5 |
|
V |
|||||||
CJ |
Capacitance |
VF = 0 V, f = 1.0MHz |
|
|
All |
|
80 |
|
|
|
|
|
pF |
||||||
DETECTOR |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
BVCEO |
Breakdown Voltage |
IC = 1.0mA, IF = 0 |
|
|
All |
30 |
100 |
|
|
|
|
|
V |
||||||
|
|
Collector to Emitter |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
BVCBO |
Collector to Base |
IC = 100µA, IF = 0 |
|
|
All |
70 |
120 |
|
|
|
|
|
V |
||||||
BVEBO |
Emitter to Base |
IE = 100µA, IF = 0 |
|
|
All |
5 |
10 |
|
|
|
|
|
V |
||||||
BVECO |
Emitter to Collector |
IE = 100µA, IF = 0 |
|
|
All |
7 |
10 |
|
|
|
|
|
V |
||||||
ICEO |
Leakage Current |
VCE = 10 V, IF = 0 |
|
H11AA1M |
|
1 |
|
|
50 |
|
nA |
||||||||
|
|
Collector to Emitter |
|
|
|
|
H11AA3M |
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
H11AA4M |
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11AA2M |
|
1 |
|
|
200 |
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
CCE |
Capacitance Collector |
VCE = 0, f = 1MHz |
|
|
All |
|
10 |
|
|
|
|
|
pF |
||||||
|
|
to Emitter |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
CCB |
Collector to Base |
VCB = 0, f = 1MHz |
|
|
All |
|
80 |
|
|
|
|
|
pF |
||||||
CEB |
Emitter to Base |
VEB = 0, f = 1MHz |
|
|
All |
|
15 |
|
|
|
|
|
pF |
||||||
*Typical values at TA = 25°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Transfer Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
Symbol |
|
Characteristics |
|
Test Conditions |
|
Device |
Min. |
|
Typ.* |
|
|
Max. |
Units |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
CTRCE |
|
Current Transfer Ratio, |
|
IF = ±10mA, VCE = 10V |
|
H11AA4M |
100 |
|
|
|
|
|
|
% |
|||||
|
|
|
Collector to Emitter |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11AA3M |
50 |
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11AA1M |
20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H11AA2M |
10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
Current Transfer Ratio, |
|
IF = ±10mA, VCE = 10V |
|
All |
.33 |
|
|
|
|
3.0 |
|
|
||||
|
|
|
Symmetry |
|
(Figure 11) |
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
VCE(SAT) |
|
Saturation Voltage, |
|
IF = ±10mA, ICE = 0.5mA |
|
All |
|
|
|
|
|
.40 |
|
V |
|||||
|
|
|
Collector to Emitter |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
Isolation Characteristics |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
Symbol |
|
Characteristic |
|
Test Conditions |
|
Min. |
|
Typ.* |
|
Max. |
|
Units |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
CI-O |
|
Package Capacitance |
|
VI-O = 0, f = 1MHz |
|
|
|
0.7 |
|
|
|
|
|
|
pF |
||||
|
|
|
Input/Output |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
VISO |
|
Isolation Voltage |
|
f = 60Hz, t = 1 sec. |
7500 |
|
|
|
|
|
|
|
Vac(pk) |
||||||
R |
ISO |
|
Isolation Resistance |
|
V |
= 500 VDC |
1011 |
|
|
|
|
|
|
|
|
Ω |
|||
|
|
|
|
I-O |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
*Typical values at TA = 25°C
Optocouplers Input/Phototransistor AC — H11AA4M H11AA3M, H11AA2M, H11AA1M,
©2006 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 |
3 |
Loading...