Fairchild CNY172, CNY173, CNY174, CNY17F1, CNY17F2 service manual

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Fairchild CNY172, CNY173, CNY174, CNY17F1, CNY17F2 service manual

October 2005

CNY171, CNY172, CNY173, CNY174, CNY17F1, CNY17F2, CNY17F3, CNY17F4, MOC8101, MOC8102, MOC8103, MOC8104, MOC8105, MOC8106, MOC8107, MOC8108 Phototransistor Optocouplers

Features

CNY171/2/3/4 and CNY17F1/2/3/4 are also available in white package by specifying M suffix (eg. CNY17F2M)

UL recognized (File # E90700)

VDE recognized

Add option V for white package (e.g., CNY17F2VM)

File #102497

Add option ‘300’ for black package (e.g., CNY17F2300)

File #94766

Current transfer ratio in select groups

High BVCEO—70V minimum (CNY17X/M, CNY17FX/M, MOC8106/7/8)

Closely matched current transfer ratio (CTR) minimizes unit- to-unit variation.

Very low coupled capacitance along with no chip to pin 6 base connection for minimum noise susceptability (CNY17FX/M, MOC810X)

Applications

Power supply regulators

Digital logic inputs

Microprocessor inputs

Appliance sensor systems

Industrial controls

Description

The CNY17, CNY17F and MOC810X devices consist of a Gallium Arsenide IRED coupled with an NPN phototransistor in a dual in-line package.

White Package (-M Suffix)

 

Black Package (No -M Suffix)

6

 

6

6

6

 

 

 

 

 

1

 

 

1

1

 

 

1

6

 

6

 

 

 

 

1

 

 

1

 

 

 

Schematic

 

 

 

ANODE 1

6 NC

ANODE 1

6 BASE

CATHODE 2

5 COLLECTOR

CATHODE 2

5 COLLECTOR

NC 3

4 EMITTER

NC 3

4 EMITTER

CNY17F1/2/3/4

CNY171/2/3/4

CNY17F1M/2M/3M/4M

CNY17F1M/2M/3M/4M

MOC8101/2/3/4/5/6/7/8

 

Optocouplers Phototransistor MOC810X CNY17FX, CNY17X,

©2004 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

Absolute Maximum Ratings

Parameters

Symbol

Device

Value

Units

 

 

 

 

 

TOTAL DEVICE

 

 

 

 

 

 

 

 

 

Storage Temperature

TSTG

M

-40 to +150

°C

 

 

non M

-55 to +150

 

 

 

 

 

 

Operating Temperature

TOPR

M

-40 to +100

°C

 

 

non M

-55 to +100

 

 

 

 

 

 

Lead Solder Temperature

TSOL

All

260 for 10 sec

°C

Total Device Power Dissipation @ 25°C (LED plus detector)

PD

M

250

mW

Derate Linearly From 25°C

 

non M

250

 

 

 

 

 

 

M

2.94

mW/°C

 

 

 

 

 

 

 

 

 

non M

3.30

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

Continuous Forward Current

IF

M

60

mA

 

 

non M

100

 

 

 

 

 

 

Reverse Voltage

VR

All

6

V

Forward Current - Peak (1 µs pulse, 300 pps)

IF (pk)

M

1.5

A

 

 

non M

1.0

 

 

 

 

 

 

LED Power Dissipation 25°C Ambient

PD

M

120

mW

Derate Linearly From 25°C

 

non M

150

 

 

 

 

 

 

M

1.41

mW/°C

 

 

 

 

 

 

 

 

 

non M

1.8

 

 

 

 

 

 

DETECTOR

 

 

 

 

 

 

 

 

 

Continuous Collector Current

IC

All

50

mA

Collector-Emitter Voltage

VCEO

CNY17X/M, CNY17FX/M,

70

V

 

 

MOC8106/7/8

 

 

 

 

 

 

 

 

 

MOC8101/2/3/4/5

30

V

 

 

 

 

 

Emitter Collector Voltage

VECO

All

7

V

Detector Power Dissipation @ 25°C

PD

M

150

mW

Derate Linearly from 25°C

 

non M

150

 

 

 

 

 

 

M

1.76

mW/°C

 

 

 

 

 

 

 

 

 

non M

2.0

 

 

 

 

 

 

Electrical Characteristics (TA = 25°C Unless otherwise specified.)(1)

Individual Component Characteristics

Parameters

Test Conditions

Symbol

Device

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input Forward Voltage

IF = 60 mA

VF

CNY17FX/M

1.0

1.35

1.65

V

 

 

 

CNY17X/M

 

 

 

 

 

 

 

 

 

 

 

 

 

IF = 10 mA

 

MOC810X

1.0

1.15

1.50

 

Capacitance

VF = 0 V, f = 1.0 MHz

CJ

All

 

18

 

pF

Reverse Leakage Current

VR = 6 V

IR

All

 

0.001

10

µA

Optocouplers Phototransistor MOC810X CNY17FX, CNY17X,

2

www.fairchildsemi.com

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

Individual Component Characteristics (Continued)

Parameters

Test Conditions

Symbol

Device

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

DETECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Breakdown Voltage

 

 

MOC8101/2/3/4/5

30

100

 

V

Collector to Emitter

IC = 1.0 mA, IF = 0

BVCEO

 

 

 

 

 

MOC8106/7/8

70

100

 

 

 

 

 

CNY17F1/2/3/4/M

 

 

 

 

 

 

 

CNY171/2/3/4/M

 

 

 

 

 

 

 

 

 

 

 

 

Collector to Base

IC = 10 µA, IF = 0

BVCBO

CNY171/2/3/4/M

70

120

 

 

Emitter to Collector

IE = 100 µA, IF = 0

BVECO

All

7

10

 

 

Leakage Current

 

 

 

 

 

 

 

Collector to Emitter

VCE = 10 V, IF = 0

ICEO

All

 

1

50

nA

Collector to Base

VCB = 10 V, IF = 0

ICBO

CNY171/2/3/4/M

 

 

20

nA

Capacitance

 

 

 

 

 

 

 

Collector to Emitter

VCE = 0, f = 1 MHz

CCE

All

 

8

 

pF

Collector to Base

VCB = 0, f = 1 MHz

CCB

CNY171/2/3/4/M

 

20

 

pF

Emitter to Base

VEB = 0, f = 1 MHz

CEB

CNY171/2/3/4/M

 

10

 

pF

Isolation Characteristics

Characteristic

Test Conditions

Symbol

Device

Min

Typ**

Max

Units

 

 

 

 

 

 

 

 

Input-Output Isolation Voltage

f = 60 Hz, t = 1 min. (4)

VISO

Black Package

5300

 

 

Vac(rms)*

 

f = 60 Hz, t = 1 sec. (4)

 

‘M’ White Package

7500

 

 

Vac(pk)

 

 

 

 

 

 

 

 

Isolation Resistance

VI-O = 500 VDC (4)

RISO

All

1011

 

 

Isolation Capacitance

VI-O = Ø, f = 1 MHz (4)

CISO

Black Package

 

0.5

 

pF

 

 

 

‘M’ White Package

 

0.2

 

 

 

 

 

 

 

 

 

 

Note

*5300 Vac(rms) for 1 minute equates to approximately 9000 Vac (pk) for 1 second

**Typical values at TA = 25°C

Optocouplers Phototransistor MOC810X CNY17FX, CNY17X,

3

www.fairchildsemi.com

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

Transfer Characteristics (T

= 25°C Unless otherwise specified.)(1)

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC Characteristics

 

Test Conditions

Symbol

Min

Typ

Max

Units

 

 

 

 

 

 

 

 

 

Coupled

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Collector

MOC8101

 

(IF = 10 mA, VCE = 10 V)

(CTR)(2)

50

80

%

Current

 

 

 

 

 

 

 

 

MOC8102

 

 

 

73

117

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MOC8103

 

 

 

108

173

 

 

 

 

 

 

 

 

 

 

 

MOC8104

 

 

 

160

256

 

 

 

 

 

 

 

 

 

 

 

MOC8105

 

 

 

65

133

 

 

 

 

 

 

 

 

 

 

 

MOC8106

 

 

 

50

150

 

 

 

 

 

 

 

 

 

 

 

MOC8107

 

 

 

100

300

 

 

 

 

 

 

 

 

 

 

 

MOC8108

 

 

 

250

600

 

 

 

 

 

 

 

 

 

 

 

CNY17F1/1M

 

(IF = 10 mA, VCE = 5 V)

 

40

80

 

 

CNY17F2/2M

 

 

 

63

125

 

 

 

 

 

 

 

 

 

 

 

CNY17F3/3M

 

 

 

100

200

 

 

 

 

 

 

 

 

 

 

 

CNY17F4/4M

 

 

 

160

320

 

 

 

 

 

 

 

 

 

 

 

CNY171/1M

 

 

 

40

80

 

 

 

 

 

 

 

 

 

 

 

CNY172/2M

 

 

 

63

125

 

 

 

 

 

 

 

 

 

 

 

CNY173/3M

 

 

 

100

200

 

 

 

 

 

 

 

 

 

 

 

CNY174/4M

 

 

 

160

320

 

 

 

 

 

 

 

 

 

 

Collector-Emitter

CNY17XM/FXM

 

(IC = 2.5 mA, IF = 10 mA)

VCE(sat)

0.4

V

Saturation Voltage

 

 

 

 

 

 

 

 

MOC8101/2/3/4/5/

 

(IC = 500 µA, IF = 5.0 mA)

 

 

 

 

 

 

 

 

 

 

 

 

 

6/7/8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNY17X/FX

 

(IF = 10 mA, IC = 2.5 mA)

 

0.3

V

 

 

 

 

 

 

 

 

AC Characteristics(3)

 

Test Conditions

Symbol

Min

Typ*

Max

Units

Non-Saturated Switching Time

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-On Time

MOC8101/2/3/4/5

 

(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)

ton

2

20

µs

 

MOC8106/7/8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNY17X/FX

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

Turn-Off Time

MOC8101/2/3/4/5

 

(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)

toff

3

20

 

 

MOC8106/7/8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNY17X/FX

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

Delay Time

CNY17XM/FXM

 

(IF = 10 mA, VCC = 5 V, RL = 75 Ω)

td

5.6

µs

Rise Time

All Devices

 

(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)

tr

1

µs

 

CNY17XM/FXM

 

(IF = 10 mA, VCC = 5 V, RL = 75 Ω)

 

4.0

 

Storage Time

CNY17XM/FXM

 

(IF = 10 mA, VCC = 5 V, RL = 75 Ω)

ts

4.1

µs

Fall Time

All Devices

 

(IC = 2.0 mA, VCC = 10 V, RL = 100 Ω)

tf

2

µs

 

CNY17XM/FXM

 

(IF = 10 mA, VCC = 5 V, RL = 75 Ω)

 

3.5

 

 

 

 

Optocouplers Phototransistor MOC810X CNY17FX, CNY17X,

4

www.fairchildsemi.com

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

Transfer Characteristics (continued) (T = 25°C Unless otherwise specified.)(1)

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

AC Characteristics(3)

Test Conditions

Symbol

Min

Typ

Max

Units

Saturated Switching Times

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-on Time

CNY171/F1

(IF = 20 mA, VCE = 0.4 V)

ton

5.5

µs

 

CNY172/F2

(IF = 10 mA, VCE = 0.4 V)

 

8.0

 

 

CNY173/F3

 

 

 

 

 

 

 

CNY174/F4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rise Time

CNY171/F1

(IF = 20 mA, VCE = 0.4 V)

tr

4.0

µs

 

CNY172/F1

(IF = 10 mA, VCE = 0.4 V)

 

6.0

 

 

CNY173/F3

 

 

 

 

 

 

 

CNY174/F4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNY171M/F1M

(IF = 20 mA, VCC = 5 V, RL = 1 KΩ)

 

4.0

 

 

CNY172M/3M/4M

(IF = 10 mA, VCC = 5 V, RL = 1 KΩ)

 

6.0

 

 

CNY17F2M/F3M/F4M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

CNY171M/F1M

(IF = 20 mA, VCC = 5 V, RL =1 KΩ)

 

5.5

µs

 

CNY172M/3M/4M

(IF = 10 mA, VCC = 5 V, RL =1 KΩ)

td

8.0

 

 

CNY17F2M/F3M/F4M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Turn-off Time

CNY171/F1

(IF = 20 mA, VCE = 0.4 V)

toff

34

µs

 

CNY172/F2

(IF = 10 mA, VCE = 0.4 V)

 

39

 

 

CNY173/F3

 

 

 

 

 

 

 

CNY174/F4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Fall Time

CNY171/F1

(IF = 20 mA, VCE = 0.4 V)

tf

20

µs

 

CNY172/F2

(IF = 10 mA, VCE = 0.4 V)

 

24

 

 

CNY173/F3

 

 

 

 

 

 

 

CNY174/F4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CNY171M/F1M

(IF = 20 mA, VCC = 5V, RL = 1KΩ)

 

20.0

 

 

CNY172M/3M/4M

(IF = 10 mA, VCC = 5V, RL = 1KΩ)

 

24.0

µs

 

CNY17F2M/F3M/F4M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Storage Time

CNY171M/F1M

(IF = 20 mA, VCC = 5V, RL = 1KΩ)

 

34.0

µs

 

CNY172M/3M/4M

(IF = 10 mA, VCC = 5V, RL = 1KΩ)

ts

39.0

 

 

CNY17F2M/F3M/F4M

 

 

 

 

 

 

 

 

 

 

 

 

 

 

** All typicals at TA = 25°C

Notes:

1.Always design to the specified minimum/maximum electrical limits (where applicable).

2.Current Transfer Ratio (CTR) = IC/IF x 100%.

3.For test circuit setup and waveforms, refer to Figures 20.

4, For this test, Pins 1 and 2 are common, and Pins 4 are 5 are common.

Optocouplers Phototransistor MOC810X CNY17FX, CNY17X,

5

www.fairchildsemi.com

CNY17X, CNY17FX, MOC810X Rev. 1.0.5

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