Fairchild BC81716MTF, BC81725MTF, BC81740MTF, BC81816MTF, BC81825MTF Schematic [ru]

November 2006

BC817/BC818

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NPN Epitaxial Silicon Transistor

Features

•Switching and Amplifier Applications

•Suitable for AF-Driver stages and low power output stages

• Complement to BC807/ BC808			3
				2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted					1 SOT-23
			1. Base	2. Emitter 3. Collector
Symbol	Parameter		Value		Units
VCBO	Collector-Base Voltage		50		V
	: BC817
	: BC818		30		V
VCEO	Collector-Emitter Voltage		45		V
	: BC817
	: BC818		25		V
VEBO	Emitter-Base Voltage		5		V
IC	Collector Current (DC)		800		mA
PC	Collector Power Dissipation		310		mW
TJ	Junction Temperature		150		°C
TSTG	Storage Temperature		-65 ~ 150		°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Electrical Characteristics* Ta=25°C unless otherwise noted

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Units
BVCEO	Collector-Emitter Breakdown Voltage	IC=10mA, IB=0	45			V
	: BC817
	: BC818		25			V
BVCES	Collector-Emitter Breakdown Voltage	IC=0.1mA, VBE=0	50			V
	: BC817
	: BC818		30			V
BVEBO	Emitter-Base Breakdown Voltage	IE=0.1mA, IC=0	5			V
ICES	Collector Cut-off Current	VCE=25V, VBE=0			100	nA
IEBO	Emitter Cut-off Current	VEB=4V, IC=0			100	nA
hFE1	DC Current Gain	VCE=1V, IC=100mA	100		630
hFE2		VCE=1V, IC=300mA	60
VCE (sat)	Collector-Emitter Saturation Voltage	IC=500mA, IB=50mA			0.7	V
VBE (on)	Base-Emitter On Voltage	VCE=1V, IC=300mA			1.2	V
fT	Current Gain Bandwidth Product	VCE=5V, IC=10mA		100		MHz
		f=50MHz
Cob	Output Capacitance	VCB=10V, f=1MHz			12	pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

Transistor Silicon Epitaxial NPN BC817/BC818

©2006 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

BC817/BC818 Rev. B

hFE Classification

Classification	16	25	40
hFE1	110 ~ 250	160 ~ 400	250 ~ 630
hFE2	60~	100~	170~

Ordering Information

Device(note1)	Device Marking	Package	Packing Method	Qty(pcs)	Pin Difinitions
BC81716MTF	8FA	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector
BC81725MTF	8FB	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector
BC81740MTF	8FC	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector
BC81816MTF	8GA	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector
BC81825MTF	8GB	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector
BC81840MTF	8GC	SOT-23	Tape & Reel	3000	1.Base 2.Emitter 3.Collector

Note1 : Affix “-16,-25,-40” means hFE classification.

Affix “-M” means the matte type package.

Affix “-TF” means the tape & reel type packing.

Transistor Silicon Epitaxial NPN BC817/BC818

2	www.fairchildsemi.com

BC817/BC818 Rev. B