November 2006
BC817/BC818
tm
NPN Epitaxial Silicon Transistor
Features
•Switching and Amplifier Applications
•Suitable for AF-Driver stages and low power output stages
• Complement to BC807/ BC808 |
3 |
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2 |
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Absolute Maximum Ratings* Ta = 25°C unless otherwise noted |
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1 SOT-23 |
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1. Base |
2. Emitter 3. Collector |
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Symbol |
Parameter |
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Value |
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Units |
VCBO |
Collector-Base Voltage |
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50 |
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V |
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: BC817 |
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: BC818 |
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30 |
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V |
VCEO |
Collector-Emitter Voltage |
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45 |
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V |
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: BC817 |
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: BC818 |
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25 |
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V |
VEBO |
Emitter-Base Voltage |
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5 |
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V |
IC |
Collector Current (DC) |
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800 |
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mA |
PC |
Collector Power Dissipation |
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310 |
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mW |
TJ |
Junction Temperature |
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150 |
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°C |
TSTG |
Storage Temperature |
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-65 ~ 150 |
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°C |
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol |
Parameter |
Test Condition |
Min. |
Typ. |
Max. |
Units |
BVCEO |
Collector-Emitter Breakdown Voltage |
IC=10mA, IB=0 |
45 |
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V |
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: BC817 |
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: BC818 |
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25 |
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V |
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BVCES |
Collector-Emitter Breakdown Voltage |
IC=0.1mA, VBE=0 |
50 |
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V |
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: BC817 |
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: BC818 |
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30 |
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V |
BVEBO |
Emitter-Base Breakdown Voltage |
IE=0.1mA, IC=0 |
5 |
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V |
ICES |
Collector Cut-off Current |
VCE=25V, VBE=0 |
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100 |
nA |
IEBO |
Emitter Cut-off Current |
VEB=4V, IC=0 |
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100 |
nA |
hFE1 |
DC Current Gain |
VCE=1V, IC=100mA |
100 |
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630 |
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hFE2 |
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VCE=1V, IC=300mA |
60 |
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VCE (sat) |
Collector-Emitter Saturation Voltage |
IC=500mA, IB=50mA |
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0.7 |
V |
VBE (on) |
Base-Emitter On Voltage |
VCE=1V, IC=300mA |
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1.2 |
V |
fT |
Current Gain Bandwidth Product |
VCE=5V, IC=10mA |
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100 |
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MHz |
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f=50MHz |
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Cob |
Output Capacitance |
VCB=10V, f=1MHz |
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12 |
pF |
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% |
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Transistor Silicon Epitaxial NPN BC817/BC818
©2006 Fairchild Semiconductor Corporation |
1 |
www.fairchildsemi.com |
BC817/BC818 Rev. B
hFE Classification
Classification |
16 |
25 |
40 |
hFE1 |
110 ~ 250 |
160 ~ 400 |
250 ~ 630 |
hFE2 |
60~ |
100~ |
170~ |
Ordering Information
Device(note1) |
Device Marking |
Package |
Packing Method |
Qty(pcs) |
Pin Difinitions |
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BC81716MTF |
8FA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC81725MTF |
8FB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC81740MTF |
8FC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC81816MTF |
8GA |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC81825MTF |
8GB |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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BC81840MTF |
8GC |
SOT-23 |
Tape & Reel |
3000 |
1.Base 2.Emitter 3.Collector |
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Note1 : Affix “-16,-25,-40” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
Transistor Silicon Epitaxial NPN BC817/BC818
2 |
www.fairchildsemi.com |
BC817/BC818 Rev. B