Fairchild BC807-16, BC807-25, BC807-40, BC808-16, BC808-25 Schematic [ru]

BC807/BC808

Switching and Amplifier Applications

• Suitable for AF-Driver stages and low power output stages

3

• Complement to BC817/BC818

2

1 SOT-23

1. Base 2. Emitter 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25° C unless otherwise noted

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage

-50

V

: BC807

: BC808

-30

V

VCEO

Collector-Emitter Voltage

-45

V

: BC807

: BC808

-25

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current (DC)

-800

mA

PC

Collector Power Dissipation

-310

mW

TJ

Junction Temperature

150

° C

TSTG

Storage Temperature

-65 ~ 150

° C

Electrical Characteristics Ta=25° C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVCEO

Collector-Emitter Breakdown Voltage

IC= -10mA, IB=0

-45

V

: BC807

: BC808

-25

V

BVCES

Collector-Emitter Breakdown Voltage

IC= -0.1mA, VBE=0

-50

V

: BC807

: BC808

-30

V

BVEBO

Emitter-Base Breakdown Voltage

IE= -0.1mA, IC=0

-5

V

ICES

Collector Cut-off Current

VCE= -25V, VBE=0

-100

nA

IEBO

Emitter Cut-off Current

VEB= -4V, IC=0

-100

nA

hFE1

DC Current Gain

VCE= -1V, IC= -100mA

100

630

hFE2

VCE= -1V, IC= -300mA

60

VCE (sat)

Collector-Emitter Saturation Voltage

IC= -500mA, IB= -50mA

-0.7

V

VBE (on)

Base-Emitter On Voltage

VCE= -1V, IC= -300mA

-1.2

V

fT

Current Gain Bandwidth Product

VCE= -5V, IC= -10mA

100

MHz

f=50MHz

Cob

Output Capacitance

VCB= -10V, f=1MHz

12

pF

BC807/BC808

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

hFE Classification

Classification	16	25	40
hFE1	100 ~ 250	160 ~ 400	250 ~ 630
hFE2	60-	100-	170-

Marking Code

Type	807-16	807-25	807-40	808-16	808-25	808-40
Marking	9FA	9FB	9FC	9GA	9GB	9GC

BC807/BC808

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002

Typical Characteristics

-500

CURRENT

5.0mA

-

-400

=

-4.5mA

IB

=

IB

4.0mA

-

=

3.5mA

IB

=

-

3.0mA

IB

-

=

2.5mA

IB

-300

-

COLLECTOR

IB=

2.0mA

-

=

IB

.5mA

IB

=

-1

-200

PT =

IB = - 1.0mA

600mW

[mA],

-100

IB = - 0.5mA

C

I

-0

IB = 0

-1

-2

-3

-4

-5

-0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

	1000
				PULSE
GAIN				VCE = - 2.0V
	100
CURRENT				- 1.0V
, DC	10
FE
h
	1	-1	-10	-100	-1000
	-0.1
		IC[mA], COLLECTOR CURRENT

Figure 3. DC current Gain

	-1000
CURRENT		VCE = -1V
		PULSE
	-100
COLLECTOR	-10
[mA],	-1
C
I
	-0.1	-0.5	-0.6	-0.7	-0.8	-0.9
	-0.4

VBE[V], BASE-EMITTER VOLTAGE

Figure 5. Base-Emitter On Voltage

CURRENT

-20

A

B

BC807/BC808

80

-

A

I

=

B

70

-

I =

A

P

B

-16

60

T =

=-

600mW

I

B

A

50

-

COLLECTOR

I =

-12

A

40

I

-

=

B

A

-8

I =

-30

B

I

A

[mA],

=-20

B

C

-4

I

10 A

I

= -

B

-0

-10

-20

-30

IB = 0

-40

-50

-0

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 2. Static Characteristic

VOLTAGE	-10
				IC = 10 IB
				PULSE
SATURATION	-1			VCE(sat)
(sat)[V],	-0.1
CE
V			VBE(sat)
(sat),
BE
V	-0.01
		-1	-10	-100	-1000
	-0.1
		IC[mA], COLLECTOR CURRENT

Figure 4. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

	100
				f = 1.0MHz
[pF], CAPACITANCE			Cib
				Cob
	10
ob
, C
ib
C
	1	-1	-10	-100
	-0.1

VCB[V], COLLECTOR-BASE VOLTAGE

VEB[V], EMITTER-BASE VOLTAGE

Figure 6. Input Output Capacitance

©2002 Fairchild Semiconductor Corporation

Rev. A2, August 2002