November 2010
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
•1.0 ampere operation at TA = 90°C with no thermal runaway.
•For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
DO-41 plastic case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol |
Parameter |
|
Value |
|
Units |
|
1N5817 |
1N5818 |
1N5819 |
||||
|
|
|
||||
VRRM |
Maximum Repetitive Reverse Voltage |
20 |
30 |
40 |
V |
|
IF(AV) |
Average Rectified Forward Current |
|
1.0 |
|
A |
|
|
.375” lead length @ TA = 90°C |
|
|
|
|
|
IFSM |
Non-repetitive Peak Surge Current |
|
25 |
|
A |
|
|
8.3 ms Single Half-Sine Wave |
|
|
|
|
|
TJ, TSTG |
Operating Junction and Storage Temperature |
|
-65 to +125 |
|
°C |
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol |
Parameter |
Value |
Units |
PD |
Power Dissipation |
1.25 |
W |
RθJA |
Maximum Thermal Resistance, Junction to Ambient |
100 |
°C/W |
RθJC |
Maximum Thermal Resistance, Junction to Case |
45 |
°C/W |
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics (per diode)
Symbol |
Parameter |
|
|
Value |
|
Units |
|
1N5817 |
1N5818 |
1N5819 |
|||
|
|
|
|
|||
VF |
Forward Voltage |
@ 1.0 A |
450 |
550 |
600 |
mV |
|
|
@ 3.0 A |
750 |
875 |
900 |
mV |
IR |
Reverse Current @ rated VR |
TC = 25 °C |
|
0.5 |
|
mA |
|
|
TC = 100 °C |
|
10 |
|
mA |
CT |
Total Capacitance |
|
|
110 |
|
pF |
|
VR = 4.0 V, f = 1.0 MHz |
|
|
|
|
|
* Pulse Test: |
Pulse Width=300μs, Duty Cycle=2% |
|
|
|
|
|
Rectifier Barrier Schottky — 1N5819 - 1N5817
© 2010 Fairchild Semiconductor Corporation |
www.fairchildsemi.com |
1N5817 - 1N5819 Rev. C2 |
1 |
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