EIC GNOH, GNOG, GNOE, GNOD, GNOB Datasheet

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EIC GNOH, GNOG, GNOE, GNOD, GNOB Datasheet

GNOA - GNOM

PRV : 50 - 1000 Volts

Io : 1.5 Amperes

FEATURES :

*Glass passivated chip

*High current capability

*High reliability

*Low reverse current

*Low forward voltage drop

MECHANICAL DATA :

*Case : SMA Molded plastic

*Epoxy : UL94V-O rate flame retardant

*Lead : Lead Formed for Surface Mount

*Polarity : Color band denotes cathode end

*Mounting position : Any

*Weight : 0.067 gram

GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

SMA (DO-214AC)

5.0 ± 0.15

4.5 ± 0.15

1.1 ± 0.3

 

1.2 ± 0.2

 

0.2 ± 0.07

 

 

2.6 ± 0.15

 

2.1 ± 0.2

 

 

2.0 ± 0.2

Dimensions in millimeter

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

 

SYMBOL

GNOA

GNOB

GNOD

GNOE

GNOG

GNOH

GNOJ

GNOK

GNOM

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Repetitive Peak Reverse Voltage

VRRM

50

100

200

300

400

500

600

800

1000

V

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

VRMS

35

70

140

210

280

350

420

560

700

V

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Blocking Voltage

 

VDC

50

100

200

300

400

500

600

800

1000

V

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Average Forward Current Ta = 75°C

IF(AV)

 

 

 

 

1.5

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

Peak Forward Surge Current

 

 

 

 

 

 

 

 

 

 

 

 

8.3ms Single half sine wave Superimposed

IFSM

 

 

 

 

50

 

 

 

 

A

on rated load (JEDEC Method)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage at IF = 1.5 Amps.

VF

 

 

 

 

1.1

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Reverse Current

Ta = 25 °C

IR

 

 

 

 

5.0

 

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

 

 

 

 

50

 

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance (Note1)

CJ

 

 

 

 

30

 

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

 

Junction Temperature Range

 

TJ

 

 

 

- 65 to + 150

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature Range

 

TSTG

 

 

 

- 65 to + 150

 

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

Page 1 of 2

Rev. 01 : Mar 23, 2002

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