GN3A - GN3M
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SMC (DO-214AB)
0.15
±
8.0
3.0±0.2
5.8±0.15
Dimensions in millimeter
0.15
±
7.5
2.3±0.2
1.1±0.3
0.2±0.07
RATING
Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps. VF 1.0 V
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1) CJ 50 pF
Junction Temperature Range TJ - 65 to + 175
Storage Temperature Range TSTG - 65 to + 175
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
Page 1 of 2 Rev. 01 : Mar 23, 2002
IF(AV) 3.0 A
IR 5.0
IR(H) 50
GN3A GN3B GN3D GN3G GN3J GN3K GN3M
DC
UNIT
AIFSM 150
µA
µA
°C
°C