EIC GN3D, GN3B, GN3A, GN3M, GN3K Datasheet

GN3A - GN3M

Rating at 25

°

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

GLASS PASSIVATED JUNCTION

SILICON SURFACE MOUNT

PRV : 50 - 1000 Volts
Io : 3.0 Amperes

FEATURES :

* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop

MECHANICAL DATA :

* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

SMC (DO-214AB)

0.15

±

8.0

3.0±0.2

5.8±0.15

Dimensions in millimeter

0.15

±

7.5

2.3±0.2

1.1±0.3

0.2±0.07

RATING

Maximum Repetitive Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward Current Ta = 75 °C

Peak Forward Surge Current

8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)

Maximum Forward Voltage at IF = 3.0 Amps. VF 1.0 V
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1) CJ 50 pF
Junction Temperature Range TJ - 65 to + 175
Storage Temperature Range TSTG - 65 to + 175

Notes :

(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V

Page 1 of 2 Rev. 01 : Mar 23, 2002

IF(AV) 3.0 A

IR 5.0

IR(H) 50

GN3A GN3B GN3D GN3G GN3J GN3K GN3M

DC

UNIT

AIFSM 150

µA
µA

°C
°C