EIC DR210G, DR208G, DR206G, DR204G, DR202G Datasheet

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EIC DR210G, DR208G, DR206G, DR204G, DR202G Datasheet

DR200G - DR210G

PRV : 50 - 1000 Volts

Io : 2.0 Amperes

FEATURES :

*Glass passivated chip

*High current capability

*High reliability

*Low reverse current

*Low forward voltage drop

MECHANICAL DATA :

*Case : D2 Molded plastic

*Epoxy : UL94V-O rate flame retardant

*Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

*Polarity : Color band denotes cathode end

*Mounting position : Any

*Weight : 0.465 gram

GLASS PASSIVATED JUNCTION

SILICON RECTIFIERS

D2

1.00 (25.4)

0.161 (4.10)

MIN.

0.154 (3.90)

0.284 (7.20)

0.268 (6.84)

1.00 (25.4)

0.034 (0.86)

MIN.

0.028 (0.71)

Dimensions in inches and ( millimeters )

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

RATING

 

SYMBOL

DR

DR

DR

DR

DR

DR

DR

UNIT

 

200G

201G

202G

204G

206G

208G

210G

Maximum Repetitive Peak Reverse Voltage

VRRM

50

100

200

400

600

800

1000

Volts

 

 

 

 

 

 

 

 

 

 

 

Maximum RMS Voltage

 

VRMS

35

70

140

280

420

560

700

Volts

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Blocking Voltage

 

VDC

50

100

200

400

600

800

1000

Volts

 

 

 

 

 

 

 

 

 

 

 

Maximum Average Forward Current

 

 

 

 

 

 

 

 

 

 

0.375"(9.5mm) Lead Length Ta = 50 °C

IF(AV)

 

 

 

2.0

 

 

 

Amps.

 

 

 

 

 

 

 

 

 

 

 

Peak Forward Surge Current

 

 

 

 

 

 

 

 

 

 

8.3ms Single half sine wave Superimposed

 

 

 

 

 

 

 

 

 

on rated load (JEDEC Method)

 

IFSM

 

 

 

50

 

 

 

Amps.

 

 

 

 

 

 

 

 

 

 

Maximum Forward Voltage at IF = 2.0 Amps.

VF

 

 

 

1.0

 

 

 

Volts

 

 

 

 

 

 

 

 

 

 

 

Maximum DC Reverse Current

Ta = 25 °C

IR

 

 

 

5.0

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

 

at rated DC Blocking Voltage

Ta = 100 °C

IR(H)

 

 

 

50

 

 

 

μA

 

 

 

 

 

 

 

 

 

 

Typical Junction Capacitance (Note1)

CJ

 

 

 

75

 

 

 

pF

 

 

 

 

 

 

 

 

 

 

Typical Thermal Resistance (Note2)

RθJA

 

 

 

20

 

 

 

°C/W

 

 

 

 

 

 

 

 

 

 

 

Junction Temperature Range

 

TJ

 

 

- 65 to + 175

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

Storage Temperature Range

 

TSTG

 

 

- 65 to + 175

 

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes :

(1)Measured at 1.0 MHz and applied reverse voltage of 4.0VDC

(2)Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.

UPDATE : MAY 27, 1998

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