A2W005G - A2W10G
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
*Glass passivated chip
*High case dielectric strength
*High surge current capability
*High reliability
*Low reverse current
*Low forward voltage drop
*Ideal for printed circuit board
MECHANICAL DATA :
*Case : Reliable low cost construction utilizing molded plastic technique
*Epoxy : UL94V-O rate flame retardant
*Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
*Polarity : Polarity symbols marked on case
*Mounting position : Any
*Weight : 1.29 grams
AVALANCHE GLASS PASSIVATED BRIDGE RECTIFIERS
WOB
0.39 (10.0)
0.31 (7.87)
0.22 (5.59) |
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- |
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0.18 (4.57) |
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AC |
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1.00 (25.4) |
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1.10 (27.9) |
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MIN. |
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MIN. |
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0.034 (0.86) |
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0.028 (0.71) |
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AC |
- |
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0.22 (5.59) |
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+ |
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AC |
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0.18 (4.57) |
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0.22 (5.59)
0.18 (4.57)
Dimension in inches and (millimeter)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING |
SYMBOL |
A2W |
A2W |
A2W |
A2W |
A2W |
A2W |
A2W |
UNIT |
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005G |
01G |
02G |
04G |
06G |
08G |
10G |
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Maximum Recurrent Peak Reverse Voltage |
VRRM |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
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Maximum RMS Voltage |
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VRMS |
35 |
70 |
140 |
280 |
420 |
560 |
700 |
Volts |
Maximum DC Blocking Voltage |
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VDC |
50 |
100 |
200 |
400 |
600 |
800 |
1000 |
Volts |
Minimum Avalanche Breakdown Voltage at 100 μA |
VBO(min.) |
100 |
150 |
250 |
450 |
700 |
900 |
1100 |
Volts |
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Maximum Avalanche Breakdown Voltage at 100 μA |
VBO(max.) |
550 |
600 |
700 |
900 |
1150 |
1350 |
1550 |
Volts |
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Maximum Average Forward Current |
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0.375" (9.5 mm) lead length |
Tc = 50°C |
IF(AV) |
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2.0 |
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Amps. |
Peak Forward Surge Current Single half sine wave |
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Superimposed on rated load (JEDEC Method) |
IFSM |
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50 |
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Amps. |
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Rating for fusing ( t < 8.3 ms. ) |
I2t |
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10 |
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A2S |
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Maximum Forward Voltage per Diode at IF = 1.0 Amp. |
VF |
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1.0 |
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Volts |
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Maximum DC Reverse Current |
Ta = 25 °C |
IR |
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10 |
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μA |
at Rated DC Blocking Voltage |
Ta = 100 °C |
IR(H) |
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1.0 |
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mA |
Typical Junction Capacitance per Diode (Note 1) |
CJ |
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24 |
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pf |
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Typical Thermal Resistance (Note 2) |
RθJA |
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36 |
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°C/W |
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Operating Junction Temperature Range |
TJ |
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- 50 to + 150 |
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°C |
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Storage Temperature Range |
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TSTG |
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- 50 to + 150 |
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°C |
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Notes :
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm) copper Pads.
UPDATE : APRIL 23,1998