XT2116
XT2116
Fast Turn-on Asymmetric Thyristor
Replaces March 1998 version, DS4674-2.2 |
DS4674-3.0 January 2000 |
APPLICATIONS
■Pulse Modulators
■Laser Diode Triggering
■Capacitor Discharge Applications
FEATURES
■The XT2116 is Asymmetrical Thyristor in which the reverse voltage capability has been sacrificed to enable a high forward blocking characteristic combined with excellent turn-on performance.
■Designed for rapid and efficient switching of high current pulses.
KEY PARAMETERS
VDRM |
1600V |
IT(AV) |
50A |
ITSM |
800A |
dIdt |
2000A/μs |
dV/dt |
300V/μs |
ton |
350ns |
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Outline type code: SO28.
See Package Details for further information.
VOLTAGE RATINGS
Type Number |
Max. Rise Time |
Repetitive Peak Voltage |
Peak Working Voltages |
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tr |
VDRM |
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VRRM* |
VDWM |
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VRWM* |
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(Tcase = 25˚C) |
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ns |
V |
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V |
V |
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V |
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XT2116 - 1601 |
100 |
1600 |
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< 2 |
1600 |
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< 2 |
XT2116 - 1401 |
120 |
1400 |
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< 2 |
1400 |
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< 2 |
XT2116 - 1201 |
120 |
1200 |
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< 2 |
1200 |
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< 2 |
XT2116 - 1001 |
140 |
1000 |
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< 2 |
1000 |
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< 2 |
XT2116 - 801 |
160 |
800 |
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< 2 |
800 |
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< 2 |
CURRENT RATINGS
Symbol |
Parameter |
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Conditions |
Max. |
Units |
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I |
Mean on-state current |
Half wave resistive load, T |
case |
= 80oC |
50 |
A |
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T(AV) |
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I |
RMS value |
T |
case |
= 80oC |
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79 |
A |
T(RMS) |
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I |
Continuous (direct) on-state current |
T |
case |
= 85oC |
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68 |
A |
T |
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XT2116
SURGE RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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ITSM |
Surge (non-repetitive) forward current |
10ms half sine; Tcase = 125oC |
800 |
A |
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I2t |
I2t for fusing |
3200 |
A2s |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
Min. |
Max. |
Units |
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R |
Thermal resistance - junction to case |
d.c. |
- |
0.35 |
oC/W |
th(j-c) |
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Rth(c-h) |
Thermal resistance - case to heatsink |
Mounting torque 3.5Nm |
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0.25 |
o |
with mounting compound |
C/W |
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Tvj |
Virtual junction temperature |
On-state (conducting) |
- |
125 |
oC |
Tstg |
Storage temperature range |
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-55 |
125 |
oC |
- |
Mounting torque |
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3.5* |
4.0 |
Nm |
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* Recommended value.
DYNAMIC CHARACTERISTICS
Tcase = 25˚C unless otherwise stated.
Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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VTM |
Maximum on-state voltage |
At IT = 100A |
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2.0 |
V |
IRRM/IDRM |
Peak reverse and off-state current |
At VRRM/VDRM |
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10/10 |
mA |
dV/dt |
Maximum linear rate of rise of off-state voltage |
T = 125oC, To V , R = 47Ω |
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300 |
V/μs |
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j |
DRM GK |
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dI/dt |
Rate of rise of on-state current |
Half sine wave of 2μs, Tj = 125˚C |
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2000 |
A/μs |
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Gate source 20V, 10Ω. tr = 160ns |
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IL |
Latching current |
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45 |
- |
mA |
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IH |
Holding current |
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35 |
- |
mA |
td |
Delay time |
VD = 400V, gate source = 500mA, tr = 50ns |
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250 |
ns |
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t |
Circuit commutated turn-off time |
IT = 25A, VRM = 0V, VDR = VDWM, Tcase =120˚C, |
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120† |
μs |
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q |
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RGK = 47Ω, dV/dt = 100V/μs. |
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† Available to 10μs.
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