DYNEX XT2116-801, XT2116-1601, XT2116-1401, XT2116-1201, XT2116-1001 Datasheet

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DYNEX XT2116-801, XT2116-1601, XT2116-1401, XT2116-1201, XT2116-1001 Datasheet

XT2116

XT2116

Fast Turn-on Asymmetric Thyristor

Replaces March 1998 version, DS4674-2.2

DS4674-3.0 January 2000

APPLICATIONS

Pulse Modulators

Laser Diode Triggering

Capacitor Discharge Applications

FEATURES

The XT2116 is Asymmetrical Thyristor in which the reverse voltage capability has been sacrificed to enable a high forward blocking characteristic combined with excellent turn-on performance.

Designed for rapid and efficient switching of high current pulses.

KEY PARAMETERS

VDRM

1600V

IT(AV)

50A

ITSM

800A

dIdt

2000A/μs

dV/dt

300V/μs

ton

350ns

 

 

 

 

Outline type code: SO28.

See Package Details for further information.

VOLTAGE RATINGS

Type Number

Max. Rise Time

Repetitive Peak Voltage

Peak Working Voltages

 

tr

VDRM

 

VRRM*

VDWM

 

VRWM*

 

(Tcase = 25˚C)

 

 

 

ns

V

 

V

V

 

V

 

 

 

 

 

 

 

 

XT2116 - 1601

100

1600

 

< 2

1600

 

< 2

XT2116 - 1401

120

1400

 

< 2

1400

 

< 2

XT2116 - 1201

120

1200

 

< 2

1200

 

< 2

XT2116 - 1001

140

1000

 

< 2

1000

 

< 2

XT2116 - 801

160

800

 

< 2

800

 

< 2

CURRENT RATINGS

Symbol

Parameter

 

 

Conditions

Max.

Units

 

 

 

 

 

 

 

I

Mean on-state current

Half wave resistive load, T

case

= 80oC

50

A

T(AV)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

RMS value

T

case

= 80oC

 

 

79

A

T(RMS)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

Continuous (direct) on-state current

T

case

= 85oC

 

 

68

A

T

 

 

 

 

 

 

 

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XT2116

SURGE RATINGS

Symbol

Parameter

Conditions

Max.

Units

 

 

 

 

 

ITSM

Surge (non-repetitive) forward current

10ms half sine; Tcase = 125oC

800

A

I2t

I2t for fusing

3200

A2s

 

 

 

 

 

 

THERMAL AND MECHANICAL DATA

Symbol

Parameter

Conditions

Min.

Max.

Units

 

 

 

 

 

 

R

Thermal resistance - junction to case

d.c.

-

0.35

oC/W

th(j-c)

 

 

 

 

 

 

 

 

 

 

 

Rth(c-h)

Thermal resistance - case to heatsink

Mounting torque 3.5Nm

-

0.25

o

with mounting compound

C/W

 

 

 

 

 

 

 

 

 

 

 

Tvj

Virtual junction temperature

On-state (conducting)

-

125

oC

Tstg

Storage temperature range

 

-55

125

oC

-

Mounting torque

 

3.5*

4.0

Nm

 

 

 

 

 

 

* Recommended value.

DYNAMIC CHARACTERISTICS

Tcase = 25˚C unless otherwise stated.

Symbol

Parameter

 

Conditions

Typ.

Max.

Units

 

 

 

 

 

 

 

VTM

Maximum on-state voltage

At IT = 100A

 

-

2.0

V

IRRM/IDRM

Peak reverse and off-state current

At VRRM/VDRM

 

-

10/10

mA

dV/dt

Maximum linear rate of rise of off-state voltage

T = 125oC, To V , R = 47Ω

-

300

V/μs

 

 

j

DRM GK

 

 

 

 

 

 

 

 

 

dI/dt

Rate of rise of on-state current

Half sine wave of 2μs, Tj = 125˚C

-

2000

A/μs

 

 

Gate source 20V, 10Ω. tr = 160ns

 

 

 

IL

Latching current

 

-

45

-

mA

 

 

 

 

 

 

 

IH

Holding current

 

-

35

-

mA

td

Delay time

VD = 400V, gate source = 500mA, tr = 50ns

-

250

ns

 

 

 

 

 

 

t

Circuit commutated turn-off time

IT = 25A, VRM = 0V, VDR = VDWM, Tcase =120˚C,

-

120

μs

q

 

RGK = 47Ω, dV/dt = 100V/μs.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Available to 10μs.

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