TF219..B
TF219..B
Fast Switching Thyristor
Replaces March 1998 version, DS4271-2.3 |
DS4271-3.0 January 2000 |
APPLICATIONS
■High Power Inverters And Choppers
■UPS
■Railway Traction
■Induction Heating
■AC Motor Drives
■Cycloconverters
FEATURES
■Double Side Cooling
■High Surge Capability
■High Voltage
VOLTAGE RATINGS
Type Number |
Repetitive |
Conditions |
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Peak |
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Voltages |
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VDRM VRRM |
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TF219 20B |
2000 |
VRSM = VRRM + 100V |
TF219 18B |
1800 |
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TF219 16B |
1600 |
IDRM = IRRM = 15mA |
TF219 14B |
1400 |
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at VRRM or VDRM & Tvj |
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Lower voltage grades available. |
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KEY PARAMETERS
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VDRM |
2000V |
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IT(RMS) |
190A |
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ITSM |
1200A |
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dV/dt |
200V/μs |
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dI/dt |
500A/μs |
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tq |
40μs |
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Outline type code: MU86.
See Package Details for further information.
CURRENT RATINGS
Symbol |
Parameter |
Conditions |
Max. |
Units |
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IT(AV) |
Mean on-state current |
Half sinewave, 50Hz, Tcase = 80oC |
120 |
A |
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I |
RMS value |
Half sinewave, 50Hz, T |
case |
= 80oC |
190 |
A |
T(RMS) |
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1/13
TF219..B
SURGE RATINGS
Symbol |
Parameter |
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Conditions |
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Max. |
Units |
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ITSM |
Surge (non-repetitive) on-state current |
10ms half sine; VR |
= 0% |
VRRM, Tj = 125˚C |
1.2 |
kA |
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I2t |
I2t for fusing |
10ms half sine; V |
= 0% |
V , T |
j |
= 125˚C |
7.2 |
A2s |
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R |
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RRM |
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THERMAL AND MECHANICAL DATA
Symbol |
Parameter |
Conditions |
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Min. |
Max. |
Units |
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Double side cooled |
dc |
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0.1 |
oC/W |
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R |
Thermal resistance - junction to case |
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Anode dc |
- |
0.19 |
oC/W |
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th(j-c) |
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Single side cooled |
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Cathode dc |
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0.24 |
oC/W |
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Clamping force 3.5kN |
Double side |
- |
0.02 |
oC/W |
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Rth(c-h) |
Thermal resistance - case to heatsink |
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with mounting compound |
Single side |
- |
0.04 |
oC/W |
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On-state (conducting) |
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125 |
oC |
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Tvj |
Virtual junction temperature |
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Reverse (blocking) |
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125 |
oC |
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Tstg |
Storage temperature range |
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-40 |
150 |
oC |
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Clamping force |
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3.3 |
3.6 |
kN |
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MEASUREMENT OF RECOVERED CHARGE - QRA1
Measurement of QRA1 : QRA1 = IRR x tRR
2
ITM
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QRA1 |
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tp |
= 1ms |
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0.5x IRR |
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dIR/dt |
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IRR |
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2/13
TF219..B
DYNAMIC CHARACTERISTICS
Symbol |
Parameter |
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Conditions |
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Min. |
Max. |
Units |
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VTM |
Maximum on-state voltage |
At 150A peak, Tcase = 25oC |
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- |
2.75 |
V |
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I |
/I |
Peak reverse and off-state current |
At V |
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, T |
case |
= 125oC |
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- |
15 |
mA |
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RRM |
DRM |
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RRM DRM |
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dV/dt |
Maximum linear rate of rise of off-state voltage |
Linear to 60% V |
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T = 125oC, Gate open circuit |
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200 |
V/μs |
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DRM |
j |
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dI/dt |
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Gate source 20V, 20Ω |
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Repetitive 50Hz |
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500 |
A/μs |
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Rate of rise of on-state current |
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tr ≤ 0.5μs, Tj = 125˚C |
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Non-repetitive |
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800 |
A/μs |
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V |
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Threshold voltage |
At T |
vj |
= 125oC |
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- |
2.0 |
V |
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T(TO) |
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rT |
On-state slope resistance |
At Tvj = 125oC |
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5.0 |
mΩ |
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tgd |
Delay time |
Tj = 25˚C, IT = 100A, |
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3* |
μs |
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VD = 50V, IG = 1A, |
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t(ON)TOT |
Total turn-on time |
dI/dt = 50A/μs, dIG/dt = 1A/μs |
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1.5* |
μs |
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I |
H |
Holding current |
T |
= 25oC, I |
TM |
= 1A, V |
D |
= 12V |
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60 |
mA |
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j |
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Tj = 125˚C, IT = 100A, VR = 50V, |
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t |
code: B |
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40 |
μs |
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t |
q |
Turn-off time |
dV/dt = 200V/μs (Linear to 60% VDRM), |
q |
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dIR/dt = 30A/μs, Gate open circuit |
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*Typical value. |
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GATE TRIGGER CHARACTERISTICS AND RATINGS |
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Symbol |
Parameter |
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Conditions |
Typ. |
Max. |
Units |
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V |
GT |
Gate trigger voltage |
V |
DRM |
= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
3.0 |
V |
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case |
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I |
GT |
Gate trigger current |
V |
DRM |
= 12V, T |
= 25oC, R |
L |
= 6Ω |
- |
200 |
mA |
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case |
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V |
GD |
Gate non-trigger voltage |
At V |
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T |
= 125oC, R |
L |
= 1kΩ |
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0.2 |
V |
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DRM |
case |
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VRGM |
Peak reverse gate voltage |
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5.0 |
V |
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IFGM |
Peak forward gate current |
Anode positive with respect to cathode |
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4 |
A |
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PGM |
Peak gate power |
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16 |
W |
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PG(AV) |
Mean gate power |
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3 |
W |
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3/13
TF219..B
CURVES
4/13
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