DYNEX RD33FG01, RD33FG02, RD33FG03, RD33FG04, RD33FG05 Datasheet
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RD33FG |
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RD33FG |
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Rectifier Diode |
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Target Information |
Replaces November 2000, version DS5415-1.1 |
DS5415-2.0 October 2001 |
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FEATURES |
KEY PARAMETERS |
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■ Optimised For High Current Rectifiers |
VRRM |
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600V |
■ High Surge Capability |
IF(AV) |
(max) |
3997A |
■ Very Low On-state Voltage |
IFSM |
(max) |
46750A |
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APPLICATIONS
■Electroplating
■Power Supplies
■Welding
VOLTAGE RATINGS |
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Part and Ordering |
Repetitive Peak |
Conditions |
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Number |
Reverse Voltage |
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VRRM |
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V |
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RD33FG06 |
600 |
VRSM = VRRM |
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RD33FG05 |
500 |
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RD33FG04 |
400 |
Outline type code: G |
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RD33FG03 |
300 |
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RD33FG02 |
200 |
(See Package Details for further information) |
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RD33FG01 |
100 |
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Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table.
For example:
RD33FG03
Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order.
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RD33FG
CURRENT RATINGS |
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T = 75oC unless otherwise stated |
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case |
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Symbol |
Parameter |
Conditions |
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Max. |
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Units |
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Double Side Cooled |
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IF(AV) |
Mean forward current |
Half wave resistive load |
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3997 |
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A |
IF(RMS) |
RMS value |
- |
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6278 |
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A |
IF |
Continuous (direct) forward current |
- |
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6358 |
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A |
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Single Side Cooled (Anode side) |
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IF(AV) |
Mean forward current |
Half wave resistive load |
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2831 |
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A |
IF(RMS) |
RMS value |
- |
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4447 |
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A |
IF |
Continuous (direct) forward current |
- |
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4401 |
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A |
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Tcase = 85˚C unless otherwise stated |
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Symbol |
Parameter |
Test Conditions |
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Max. |
Units |
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Double Side Cooled |
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IF(AV) |
Mean forward current |
Half wave resistive load |
3830 |
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A |
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IF(RMS) |
RMS value |
- |
6010 |
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A |
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IF |
Continuous (direct) forward current |
- |
6080 |
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A |
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Single Side Cooled |
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IF(AV) |
Mean forward current |
Half wave resistive load |
2710 |
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A |
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IF(RMS) |
RMS value |
- |
4260 |
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A |
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IF |
Continuous (direct) forward current |
- |
4210 |
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A |
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RD33FG
SURGE RATINGS
Symbol |
Parameter |
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Test Conditions |
Max. |
Units |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine, Tcase = 175˚C |
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37.4 |
kA |
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I2t |
I2t for fusing |
V |
R |
= 50% V - 1/4 sine |
7.0 x 106 |
A2s |
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RRM |
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IFSM |
Surge (non-repetitive) forward current |
10ms half sine, Tcase = 175˚C |
46.75 |
kA |
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I2t |
I2t for fusing |
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VR = 0 |
10.93 x 106 |
A2s |
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THERMAL AND MECHANICAL RATINGS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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Rth(j-c) |
Thermal resistance - junction to case |
Double side cooled |
DC |
- |
0.032 |
˚CW |
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Single side cooled |
Anode DC |
- |
0.064 |
˚CW |
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Cathode DC |
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0.064 |
˚CW |
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Rth(c-h) |
Thermal resistance - case to heatsink |
Clamping force 12.0kN |
Double side |
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0.008 |
˚CW |
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(with mounting compound) |
Single side |
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0.016 |
˚CW |
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Tvj |
Virtual junction temperature |
Forward (conducting) |
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- |
225 |
˚C |
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Reverse (blocking) |
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- |
200 |
˚C |
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Tstg |
Storage temperature range |
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–55 |
200 |
˚C |
Fm |
Clamping force |
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10.8 |
13.2 |
kN |
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CHARACTERISTICS
Symbol |
Parameter |
Test Conditions |
Min. |
Max. |
Units |
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IRM |
Peak reverse current |
At VRRM, Tcase = 200˚C |
- |
50 |
mA |
Irr |
Peak reverse recovery current |
IF = 1000A, dIRR/dt = 3A/µ s, |
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30 |
A |
QS |
Total stored charge |
Tcase = 200˚C, VR = 100V |
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160 |
µ C |
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VTO |
Threshold voltage |
At Tvj = 200˚C |
- |
0.6 |
V |
rT |
Slope resistance |
At Tvj = 200˚C |
- |
0.0872 |
mΩ |
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3/7
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